Method of manufacturing semiconductor apparatus

Patent metadata

Field	Value
Publication number	US-9412785-B2
Application number	US-201414337488-A
Country	US
Kind code	B2
Filing date	Jul 22, 2014
Priority date	Aug 22, 2013
Publication date	Aug 9, 2016
Grant date	Aug 9, 2016

Abstract

A method of manufacturing a semiconductor apparatus comprising forming an electrode on a structure provided on a substrate, the structure including a wiring pattern and an interlayer insulation film, forming a first film covering the electrode and the structure, forming an opening in a portion of the first film inside an outer edge of a convex portion formed by steps between upper faces of the electrode and the structure so as to expose a first portion as a portion of the upper face of the electrode, forming a second film covering the first film and the first portion, forming a protective film covering the first portion, the convex portion, and a periphery of the convex portion by patterning the second film, and forming a third film on the first film and the protective film by spin coating.

First claim

What is claimed is:

1. A method of manufacturing a solid-state imaging apparatus, comprising a plurality of photoelectric conversion portions arranged on a substrate, a plurality of microlenses provided in correspondence with the plurality of photoelectric conversion portions, and a plurality of color filters provided between the plurality of photoelectric conversion portions and the plurality of microlenses,
the method comprising:
forming an electrode on a structure provided on the substrate, the structure including a wiring pattern and an interlayer insulation film;
forming a first film having insulating properties, the first film covering the electrode and the structure;
forming an opening in a portion of the first film inside an outer edge of a convex portion formed by steps between an upper face of the electrode and an upper face of the structure so as to expose a first portion as a portion of the upper face of the electrode;
forming a second film covering the first film and the first portion;
patterning the second film to form a first color filter and a protective film simultaneously, the first color filter being one of the plurality of color filters, and the protective film covering the first portion, the convex portion, and a periphery of the convex portion; and
forming a third film on the first film and the protective film by spin coating.

2. The method according to claim 1 , wherein the apparatus includes a pixel region and an electrode region when viewed from an upper side,
wherein the plurality of photoelectric conversion portions, the plurality of microlenses, and the plurality of color filters are provided in the pixel region,
wherein the electrode and the protective film are provided in the electrode region, and
wherein, in the patterning the second film, the second film is patterned such that, in the electrode region among the pixel region and the electrode region, a distance from the outer edge of the convex portion of the first film to an outer edge of the protective film becomes not less than 40 μm.

3. The method according to claim 1 , wherein the protective film is made of the same member as the first color filter having one of a plurality of colors.

4. The method according to claim 1 , further comprising forming a second color filter having a color different from the first color filter by performing exposure processing and development processing for the third film formed in the forming the third film.

5. The method according to claim 4 , further comprising forming a third color filter before the forming the third film.

6. The method according to claim 1 , further comprising, after the forming the third film, removing the protective film and the third film and forming an opening so as to partially expose the upper face of the electrode.

7. The method according to claim 1 , wherein a thickness of the second film is larger than that of the electrode.

8. The method according to claim 1 , wherein the second film covers the first film located on the electrode, and covers the first film that is not located on the electrode and has a flat upper face.

Assignees

• Canon Kk

Inventors

• Kurihara Masaki

Classifications

• H10F77/413

  directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title

• H10F39/8053

  Colour filters · CPC title

• H10F39/024

  of coatings or optical elements · CPC title

• H10F39/026 Primary

  Wafer-level processing · CPC title

• H01L27/14621

  Electricity · mapped topic