Display device and electronic unit

Patent metadata

Field	Value
Publication number	US-9412763-B2
Application number	US-201213417989-A
Country	US
Kind code	B2
Filing date	Mar 12, 2012
Priority date	Mar 31, 2011
Publication date	Aug 9, 2016
Grant date	Aug 9, 2016

Abstract

A display device includes a substrate, a display element, a transistor as a drive element of the display element, and a holding capacitance element holding electric charge corresponding to a video signal, and including a first conductive film, a first semiconductor layer including an oxide semiconductor, an insulating film, and a second conductive film in order of closeness to the substrate. The display element, the transistor, and the holding capacitance element are provided on the substrate.

First claim

The invention is claimed as follows:

1. A display device comprising:
a substrate;
a display element;
a transistor as a drive element of the display element, and including a second semiconductor layer including an oxide semiconductor, a gate insulating film provided on a selected region in the second semiconductor layer, and a gate electrode provided on the gate insulating film in order of closeness to the substrate; and
a holding capacitance element holding electric charge corresponding to a video signal, and including a first conductive film, a first semiconductor layer including an oxide semiconductor, an insulating film, and a second conductive film in order of closeness to the substrate, wherein, both the first conductive film and the second semiconductor layer come into direct surface contact with the substrate, wherein
the display element, the transistor, and the holding capacitance element are provided on the substrate, wherein the first and second semiconductor layers are integrally formed of a same material on the substrate, wherein the second conductive film is formed of a same material as a material of the gate electrode, wherein the gate insulating film of the transistor and the insulating film of the holding capacitance element are separated from one another by a gap, and wherein the gate electrode is formed in a same element layer as the second conductive film.

2. The display device according to claim 1 , wherein the transistor further includes
a source drain electrode layer being electrically connected to the second semiconductor layer in order of closeness to the substrate.

3. The display device according to claim 2 , wherein the first conductive film is provided on a selected region in the substrate, and the insulating film is formed of a same material as a material of the gate insulating film.

4. The display device according to claim 2 , wherein the first and second semiconductor layers have a low-resistance region having a lower electric resistance than other regions in a region unopposed to both the holding capacitance element and the gate electrode, and
the source/drain electrode layer is electrically connected to the low-resistance region.

5. The display device according to claim 2 , wherein a high-resistance film is provided covering the holding capacitance element, the gate electrode, and the low resistance region of the first and second semiconductor layers.

6. The display device according to claim 1 , wherein the display element is an organic electroluminescence element.

7. The display device according to claim 1 , wherein the display element is a liquid crystal display element.

8. An electronic unit with a display device, the display device comprising:
a substrate;
a display element;
a transistor as a drive element of the display element, and including
a second semiconductor layer including an oxide semiconductor,
a gate insulating film provided on a selected region in the second semiconductor layer, and
a gate electrode provided on the gate insulating film in order of closeness to the substrate; and
a holding capacitance element holding electric charge corresponding to a video signal, and including a first conductive film, a first semiconductor layer including an oxide semiconductor, an insulating film, and a second conductive film in order of closeness to the substrate, wherein, both the first conductive film and the second semiconductor layer come into direct surface contact with the substrate, and wherein
the display element, the transistor, and the holding capacitance element are provided on the substrate, wherein the first and second semiconductor layers are integrally formed of a same material on the substrate, wherein the second conductive film is formed of a same material as a material of the gate electrode, wherein the gate insulating film of the transistor and the insulating film of the holding capacitance element are separated from one another by a gap, and wherein the gate electrode is formed in a same element layer as the second conductive film.

Assignees

• Morosawa Narihiro
• Joled Inc

Inventors

• Morosawa Narihiro

Classifications

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• H10D30/674

  characterised by the active materials · CPC title

• H10D86/481 Primary

  integrated with passive devices, e.g. auxiliary capacitors · CPC title

• H10D86/60 Primary

  wherein the TFTs are in active matrices · CPC title

• H10F77/247

  comprising indium tin oxide [ITO] · CPC title