Microelectronic assemblies with inductors in direct bonding regions
US-2024355768-A1 · Oct 24, 2024 · US
US9412734B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9412734-B2 |
| Application number | US-201514588991-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 5, 2015 |
| Priority date | Dec 9, 2014 |
| Publication date | Aug 9, 2016 |
| Grant date | Aug 9, 2016 |
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A structure with an inductor and a MIM capacitor is provided. The structure includes a dielectric layer, an inductor and a MIM capacitor. The inductor and the MIM capacitor are disposed within the dielectric layer. The inductor includes a core and a wire surrounding the core. The MIM capacitor includes a top electrode, a bottom electrode and an insulating layer. The top electrode or the bottom electrode includes a material which forms the core.
Opening claim text (preview).
What is claimed is: 1. A structure with an inductor and an MIM capacitor, comprising: a dielectric layer; an inductor disposed within the dielectric layer, the inductor comprising: a core; and a wire surrounding the core, wherein the wire is in a shape of a spiral; and a MIM capacitor disposed within the dielectric layer, the MIM capacitor comprising: a top electrode; a bottom electrode; and an insulating layer disposed between the top electrode and the bottom electrode; wherein one of the top electrode and the bottom electrode comprises a material composing the core. 2. The structure with an inductor and an MIM capacitor of claim 1 , wherein the bottom electrode comprises the material composing the core. 3. The structure with an inductor and an MIM capacitor of claim 1 , wherein the inductor and the MIM capacitor are both embedded within the dielectric layer. 4. The structure with an inductor and an MIM capacitor of claim 1 , further comprising a plurality of first trenches disposed in the dielectric layer, wherein the top electrode, the bottom electrode and the insulating layer are disposed in the first trench. 5. The structure with an inductor and an MIM capacitor of claim 1 , wherein the top electrode, the bottom electrode and the insulating layer constitute a planar capacitor structure. 6. The structure with an inductor and an MIM capacitor of claim 1 , further comprising at least a second trench disposed within the dielectric layer, wherein the core is disposed within the second trench. 7. The structure with an inductor and an MIM capacitor of claim 1 , wherein the wire does not contact the core. 8. The structure with an inductor and an MIM capacitor of claim 1 , further comprising a first metal layer disposed under the dielectric layer and a second metal layer disposed on the dielectric layer, wherein the inductor and the MIM capacitor are both disposed between the first metal layer and the second metal layer. 9. The structure with an inductor and an MIM capacitor of claim 8 , wherein the first metal layer electrically connects the top electrode and the second metal layer electrically connects the bottom electrode. 10. The structure with an inductor and an MIM capacitor of claim 8 , wherein the first metal layer comprises a first circuit and a second circuit, the top electrode electrically connects to the first circuit and the bottom electrode electrically connects to the second circuit. 11. The structure with an inductor and an MIM capacitor of claim 8 , wherein an end of the wire electrically connects to the first metal layer and another end of the wire electrically connects to the second metal layer. 12. The structure with an inductor and an MIM capacitor of claim 8 , wherein the first metal layer comprises a third circuit and a fourth circuit, an end of the wire electrically connects to the third circuit, and another end of the wire electrically connects to the fourth circuit. 13. The structure with an inductor and an MIM capacitor of claim 1 , wherein the material composing the core comprises conductive magnetic materials. 14. The structure with an inductor and an MIM capacitor of claim 1 , wherein the bottom electrode and the core are formed by the same fabricating step.
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