Varistor

Patent metadata

Field	Value
Publication number	US-9412504-B2
Application number	US-201314649887-A
Country	US
Kind code	B2
Filing date	Dec 6, 2013
Priority date	Dec 7, 2012
Publication date	Aug 9, 2016
Grant date	Aug 9, 2016

Abstract

An electrically adjustable memory effect resistor comprises a stack comprising a superconductive material extending along an axis, a ferroelectric material and a conductive third material. The adjustable resistor comprises a means for controlling electrical voltage allowing an electric field to be generated between the superconductive material and the conductive material allowing the polarization direction of the ferroelectric second material to be modified. The adjustable resistor furthermore comprises an electrically insulating material placed between the ferroelectric material and the conductive material, the thickness of the insulating material varying in a direction parallel to the axis—so as to cause a variation in the electric field applied between the first layer and the third layer.

First claim

The invention claimed is:

1. An electrically adjustable memory effect resistor comprising:
a stack comprising:
a first layer of a superconductive first material possessing a first under-doped state of first critical temperature and a second over-doped state of second critical temperature, the second critical temperature being above the first critical temperature, the first layer of superconductive material extending along an axis;
a second layer of a ferroelectric second material polarized or having a component of its polarization in a direction parallel to the direction of the stack, the state of the first material depending on the polarization direction of the second material; and
a third layer of a conductive third material; and

a means for controlling the electrical voltage between the first layer of superconductive material and the third layer of conductive material, generating an electric field allowing the polarization direction of the ferroelectric second material to be modified when the electrical control voltage is higher than a threshold voltage value;
the stack further comprises a fourth layer comprising at least one electrically insulating fourth material, the fourth layer being placed between the second layer of ferroelectric material and the third layer of conductive material, the thickness of the electrically insulating fourth layer varying in a direction parallel to the axis x and/or the fourth layer comprises a succession of materials of different dielectric constants in a direction parallel to the axis, so as to cause a variation in the electric field applied between the first layer and the third layer, the adjustable resistor being configured to operate over an interval of temperatures in which the difference between the electrical resistance of the over-doped state and the under-doped state of the first material is nonzero.

2. The adjustable resistor as claimed in claim 1 , in which the first material is a superconductor with a high critical temperature.

3. The adjustable resistor as claimed in claim 2 , in which the superconductive first material comprises YBa 2 Cu 3 O 7-x , or NdBa 2 Cu 3 O 7-x or any other superconductive material from the ReBa 2 CuO 7-x family, Re being a material from the rare-earth family; or any other superconductive material from the cuprate family.

4. The adjustable resistor as claimed in claim 1 , in which the ferroelectric second material preserves the polarization direction defined by applying the electrical voltage after application of the electrical voltage has been stopped.

5. The adjustable resistor as claimed in claim 4 , in which the second material comprises BiFeO 3 or BaTiO 3 .

6. The adjustable resistor as claimed in claim 1 , in which the thickness of the electrically insulating fourth layer continuously increases in a direction parallel to the axis.

Assignees

• Thales Sa
• Centre Nat Rech Scient

Inventors

• Briatico Javier
• Villegas Javier
• Bernard Rozenn

Classifications

• G11C2213/52

  Structure characterized by the electrode material, shape, etc. · CPC title

• G11C13/0002

  using resistive RAM [RRAM] elements · CPC title

• H01C7/10 Primary

  voltage responsive, i.e. varistors · CPC title

• G11C11/54

  using elements simulating biological cells, e.g. neuron · CPC title

• G11C11/5657

  using ferroelectric storage elements · CPC title