LaNiO3 thin film-forming composition and method of forming LaNiO3 thin film using the same

US9412485B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9412485-B2
Application numberUS-201414173049-A
CountryUS
Kind codeB2
Filing dateFeb 5, 2014
Priority dateFeb 13, 2013
Publication dateAug 9, 2016
Grant dateAug 9, 2016

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A LaNiO 3 thin film having extremely few voids is uniformly formed. Provided is a LaNiO 3 thin film-forming composition for forming a LaNiO 3 thin film. It includes: a LaNiO 3 precursor; a first organic solvent; a stabilizer; and a second organic solvent. The first organic solvent includes carboxylic acids, alcohols, esters, ketones, ethers, cycloalkanes, aromatic compounds, or tetrahydrofuran. The stabilizer includes β-diketones, β-ketones, β-keto esters, oxyacids, diols, triols, carboxylic acids, alkanolamines, or polyvalent amines. The second organic solvent has a boiling point of 150° C. to 300° C. and a surface tension of 20 to 50 dyn/cm. The LaNiO 3 precursor content is 1 to 20 mass % with respect to 100 mass % of the composition. The stabilizer content is 0 to 10 mol with respect to 1 mol of a total amount of the LaNiO 3 precursors. The second organic solvent content is 5 to 20 mass % with respect to the composition.

First claim

Opening claim text (preview).

What is claimed is: 1. A LaNiO 3 thin film-forming composition for forming a LaNiO 3 thin film, the composition comprising: LaNiO 3 precursors; one or more first organic solvents selected from the group consisting of carboxylic acids, alcohols, esters, ketones, ethers, cycloalkanes, aromatic compounds, and tetrahydrofuran; one or more stabilizers selected from the group consisting of β-diketones, β-ketones, β-keto esters, oxyacids, diols, triols, carboxylic acids, alkanolamines, and polyvalent amines; and a second organic solvent having a boiling point of 150° C. to 300° C. and a surface tension of 20 dyn/cm to 50 dyn/cm, wherein a ratio of the LaNiO 3 precursors is 1 mass % to 20 mass % in terms of oxides with respect to 100 mass % of the composition, a ratio of the stabilizer is greater than 0 mol and less than or equal to 10 mol with respect to 1 mol of a total amount of the LaNiO 3 precursors in the composition, and a ratio of the second organic solvent is 5 mass % to 20 mass % with respect to 100 mass % of the composition. 2. The LaNiO 3 thin film-forming composition according to claim 1 , wherein each of the LaNiO 3 precursors is a metal carboxylate, a metal nitrate, a metal alkoxide, a metal diol complex, a metal triol complex, a metal β-diketonate complex, a metal β-diketoester complex, a metal β-iminoketo complex, or a metal amino complex. 3. The LaNiO 3 thin film-forming composition according to claim 2 , wherein at least either a LaNiO 3 precursor as a La source or a LaNiO 3 precursor as a Ni source among the LaNiO 3 precursors is an acetate, a nitrate, or an octylate. 4. The LaNiO 3 thin film-forming composition according to claim 1 , wherein the second organic solvent is at least one of N,N-dimethylformamide, N,N-dimethylacetamide, N-methylformamide, 4-butyrolactone, N-methylpyrrolidone, and propylene carbonate. 5. A method of forming a LaNiO 3 thin film, wherein the LaNiO 3 thin film-forming composition according to claim 1 is used. 6. A method of forming a LaNiO 3 thin film, comprising: forming a coating film on a heat-resistant substrate by coating the LaNiO 3 thin film-forming composition according to claim 1 on the heat-resistant substrate; pre-baking the substrate including the coating film in an oxidation atmosphere or in a water vapor-containing atmosphere under atmospheric pressure to obtain a film, or repeating the formation of the coating film and the pre-baking of the substrate 2 times or more until a film having a predetermined thickness is obtained; and baking the film at a crystallization temperature or higher.

Assignees

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Classifications

  • Alkoxides, e.g. methoxide, tert-butoxide · CPC title

  • performed under reactive atmosphere, e.g. oxidising or reducing atmospheres · CPC title

  • Wet mixtures · CPC title

  • based on oxide ceramics · CPC title

  • Organic acids, e.g. EDTA, citrate, acetate, oxalate · CPC title

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What does patent US9412485B2 cover?
A LaNiO 3 thin film having extremely few voids is uniformly formed. Provided is a LaNiO 3 thin film-forming composition for forming a LaNiO 3 thin film. It includes: a LaNiO 3 precursor; a first organic solvent; a stabilizer; and a second organic solvent. The first organic solvent includes carboxylic acids, alcohols, esters, ketones, ethers, cycloalkanes, aromatic compounds, or tetrahydrofu…
Who is the assignee on this patent?
Mitsubishi Materials Corp
What technology area does this patent fall under?
Primary CPC classification H01B1/08. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Aug 09 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).