Low density parity check circuit

Patent metadata

Field	Value
Publication number	US-9411684-B2
Application number	US-201414218315-A
Country	US
Kind code	B2
Filing date	Mar 18, 2014
Priority date	Mar 18, 2014
Publication date	Aug 9, 2016
Grant date	Aug 9, 2016

Abstract

Generally discussed herein are Low Density Parity Check (LDPC) circuit layouts. An example LDPC circuit can include combinational logic and a plurality of memory units. Each of the plurality of memory units can be electrically coupled to each other and the combinational logic, and the plurality of memory units can be situated in a ring-like configuration.

First claim

What is claimed is:

1. A Low Density Parity Check (LDPC) System on Chip (SoC) package comprising:
a first memory channel and a second memory channel, the first memory channel including a first dedicated write memory channel, the second memory channel including a second dedicated write memory channel;
a read memory channel shared by the first memory channel and the second memory channel;
a Low Density Parity Check (LDPC) circuit coupled to the first and second memory channels, the LDPC comprising:
combinational logic; and

a plurality of memory units electrically coupled to the combinational logic and each other,
wherein the plurality of memory units are situated in an open-annulus configuration, wherein the combinational logical is principally located inside the open-annulus configuration, wherein the first and second write channels are situated principally outside a periphery of the open-annulus configuration, and wherein the read channel is situated principally within the open-annulus configuration and partially outside the open-annulus configuration of memory units, and
wherein the first memory channel is situated principally outside a first portion of the open-annulus configuration and the second memory channel is situated principally outside a second portion of the open-annulus configuration, and wherein the second portion of the open-annulus configuration is adjacent to and non-overlapping with the first portion of the open-annulus configuration, and wherein the read channel is partially situated in space between memory units in the open-annulus configuration and extends through the space to be partially situated outside the periphery of the open-annulus configuration of memory units.

2. The SoC package of claim 1 , further comprising first and second memory channel Input/Output circuitry.

3. The SoC package of claim 1 , wherein the first and second memory channels are flash memory channels.

4. The SoC package of claim 1 , further comprising a clock coupled to each of the plurality of memory units, wherein the clock is configured to oscillate at about between two hundred and about six hundred megahertz.

5. The SoC package of claim 4 , wherein the clock is configured to oscillate at around two hundred twenty-five megahertz.

6. A method of making a Low Density Parity Check (LDPC) Integrated Circuit (IC) comprising:
arranging a plurality of memory units in an open-annulus configuration;
arranging combinational logic principally within the open-annulus configuration of memory units;
electrically coupling the combinational logic to the plurality of memory units and electrically coupling each of the memory units of the plurality of memory units to all the other memory units of the plurality of memory units;
arranging a first memory channel and a second memory channel around the open-annulus configuration of memory units, including arranging a first memory write channel of the first memory channel and a second memory write channel of the second memory channel principally outside a periphery of the open-ring configuration of memory units, wherein the first memory channel is situated principally outside a first portion of the open-annulus configuration and the second memory channel is situated principally outside a second portion of the open-annulus configuration, and wherein the second portion of the open-annulus configuration is adjacent to and non-overlapping with the first portion of the open-annulus configuration; and
arranging a read channel shared by the first and second memory channels principally within the open-annulus configuration, partly in an open space between memory units of the open-annulus configuration, and extending through the space outside a periphery of the open ring configuration of memory units through the open area.

7. The method of claim 6 , further comprising electrically coupling the read channel and the first and second write channels to the combinational logic.

8. The method of claim 6 , further comprising arranging first and second memory channel Input/Output (I/O) circuitry outside the periphery of the ring-like configuration, the I/O circuitry configured to electrically couple a first memory to the first write channel and the read channel and the I/O circuitry configured to electrically couple a second memory to the second write channel and the read channel when the first and second memories are coupled to the I/O circuitry.

9. The method of claim 6 , wherein arranging the plurality of memory units includes situating the memory units generally around the center of the IC, and wherein arranging the combinational logic includes situating the combinational logic generally in the center of the IC.

Assignees

• Micron Technology Inc

Inventors

• Holt Joe F
• Rajgopal Suresh
• Derouen Jacob B
• Hess Benjamin G

Classifications

• G06F11/1076 Primary

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