Optical scanning device and image forming apparatus including the same
US-9223131-B2 · Dec 29, 2015 · US
US9411154B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9411154-B2 |
| Application number | US-201414311760-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 23, 2014 |
| Priority date | Jun 24, 2013 |
| Publication date | Aug 9, 2016 |
| Grant date | Aug 9, 2016 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A micro-electromechanical reflector is described including an electrode substrate having a first surface and a second surface, which is opposite to the first surface, on whose first surface a carrier layer is situated, a plurality of electrode recesses, which are introduced under the carrier layer from the first surface into the electrode substrate, a plurality of second electrode recesses, which are introduced from the second surface into the electrode substrate, at least one torsion spring structure which is formed in the carrier layer over one of the first electrode recesses, a carrier substrate, which is attached to the second surface of the electrode substrate, and a reflector surface, which is situated on the carrier layer.
Opening claim text (preview).
What is claimed is: 1. A micro-electromechanical reflector, comprising: an electrode substrate having a first surface and a second surface opposite to the first surface; a carrier layer situated on a first surface of the electrode substrate; a plurality of first electrode recesses located under the carrier layer from the first surface into the electrode substrate; a plurality of second electrode recesses introduced from a second surface of the electrode substrate into the electrode substrate; at least one torsion spring structure formed in the carrier layer over one of the first electrode recesses; a carrier substrate attached to the second surface of the electrode substrate; a reflector surface situated on the carrier layer; at least one first electrode movably mounted in the electrode substrate via the torsion spring structure; at least one second electrode mechanically fixedly anchored to at least one of the carrier substrate and the carrier layer, wherein the first electrode and the second electrode are formed by the first and second electrode recesses; at least one first comb structure; and at least one second comb structure, wherein: the first comb structure and the second comb structure are formed by the second electrode recesses; the first comb structure is coupled to the first electrode and the second comb structure is coupled to the second electrode; the first and second comb structures include a plurality of comb elements that are interlocked in an electrode substrate plane and are situated spaced apart from one another and vertically in relation to the electrode substrate plane; and the carrier substrate is connected to the electrode substrate via a metallic bonding material. 2. The micro-electromechanical reflector as recited in claim 1 , further comprising: an oxide layer implemented between the carrier layer and the electrode substrate; and at least one electrically conductive via through the carrier layer and the oxide layer, via which at least one of the first and second electrodes are each electrically conductively connected to the carrier layer. 3. The micro-electromechanical reflector as recited in claim 1 , wherein electrical vias are implemented from a surface of the carrier substrate facing away from the electrode substrate through the carrier substrate up to the metallic bonding material. 4. The micro-electromechanical reflector as recited in claim 3 , wherein the carrier substrate has, as electrical vias, silicon vias and an oxide layer on the surface facing the electrode substrate, which extends in the area of the silicon vias laterally beyond an extension of the silicon vias onto the carrier substrate. 5. The micro-electromechanical reflector as recited in claim 1 , wherein at least two first electrodes are implemented in the electrode substrate, a first of the first electrodes forms a frame structure, within which a second of the first electrodes forms an electrode which is gimbal-mounted via two torsion spring structures. 6. The micro-electromechanical reflector as recited in claim 5 , further comprising: at least one third comb structure; and at least one fourth comb structure, wherein the third and fourth comb structures are formed by the electrode recesses, wherein: the first comb structure is coupled to a first of the first electrode, the second comb structure is coupled to a second of the first electrode, and the third and fourth comb structures have a plurality of comb elements that are interlocked in the electrode substrate plane and are situated spaced apart from one another and vertically in relation to the electrode substrate plane. 7. The micro-electromechanical reflector as recited in claim 1 , further comprising: a further metallic bonding material; a spacer connected to the further metallic bonding material; and a mirror element situated on the spacer, wherein the further metallic bonding material, the spacer, and the mirror element are applied to the carrier layer, and wherein the reflector surface is applied to a side of the mirror element facing away from the spacer. 8. The micro-electromechanical reflector as recited in claim 7 , wherein the mirror element includes a lateral extension that extends beyond the torsion spring structure in the substrate plane of the electrode substrate. 9. The micro-electromechanical reflector as recited in claim 1 , wherein at least one of the carrier substrate and the electrode substrate has SOI substrates. 10. A method for manufacturing a micro-electromechanical reflector, comprising: forming a plurality of first electrode recesses from a first surface into an electrode substrate; attaching a carrier layer to the first surface of the electrode substrate over the plurality of first electrode recesses; forming at least one torsion spring structure in the carrier layer; attaching, via a metallic bonding material, a carrier substrate to a surface of the electrode substrate facing away from the carrier layer; forming a plurality of second electrode recesses from a second surface into the electrode substrate, so that at least one first electrode, which is movably mounted in the electrode substrate via the torsion spring structure; forming at least one second electrode, which is mechanically fixedly anchored to at least one of the carrier substrate and the carrier layer, by the first and second electrode recesses; forming at least one first comb structure and at least one second comb structure are formed by the second electrode recesses; coupling the first comb structure to the first electrode; coupling the second comb structure to the second electrode, wherein the first and second comb structures having a plurality of comb elements, which are interlocked in an electrode substrate plane and are situated spaced apart from one another and vertically in relation to the electrode substrate plane; and applying a reflector surface over the carrier layer.
the reflecting element being moved or deformed by electrostatic means · CPC title
Conductor or circuit manufacturing · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.