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Devices comprising coated semiconductor nanocrystal heterostructures
US9410959B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9410959-B2 |
| Application number | US-201213594719-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 24, 2012 |
| Priority date | Aug 13, 2002 |
| Publication date | Aug 9, 2016 |
| Grant date | Aug 9, 2016 |
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Abstract
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A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.
First claim
Opening claim text (preview).
What is claimed is: 1. A nanocrystal having a type II heterostructure, comprising a core of a first semiconductor material surrounded by a shell of a second semiconductor material and a second shell of a third semiconductor material, wherein the first semiconductor material and the second semiconductor materials are selected so that upon excitation both charge carriers of an exciton are not confined in one semiconductor material and a surface of the nanocrystal includes an organic layer. 2. A nanocrystal in accordance with claim 1 wherein one carrier is confined to the core, while the other is mostly confined to the shell. 3. A nanocrystal in accordance with claim 1 wherein photoluminescence emission from the nanocrystal occurs at a longer wavelength than photoluminescent emission from the core without the shell. 4. A nanocrystal in accordance with claim 1 wherein photoluminescence emission from the nanocrystal occurs at a longer wavelength than photoluminescent emission from a nanocrystal core comprising the first semiconductor material without a nanocrystal shell. 5. A nanocrystal in accordance with claim 1 wherein photoluminescence emission from the nanocrystal occurs at a longer wavelength than photoluminescent emission from a nanocrystal core comprising the second semiconductor material without a nanocrystal shell. 6. A nanocrystal in accordance with claim 1 wherein emission from the nanocrystal originates from radiative recombination of the carriers across the core-shell interface. 7. A device comprising the nanocrystal of claim 1 .
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Classifications
Nanoparticles · CPC title
Tellurides · CPC title
Selenides · CPC title
characterised by the chemical composition · CPC title
Tellurides · CPC title
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Frequently asked questions
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- What does patent US9410959B2 cover?
- A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.
- Who is the assignee on this patent?
- Kim Sungjee, Bawendi Moungi G, Massachusetts Inst Technology
- What technology area does this patent fall under?
- Primary CPC classification G01N33/588. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Aug 09 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).