Laser light source and method for producing a laser light source

Patent metadata

Field	Value
Publication number	US-9407063-B2
Application number	US-201514627895-A
Country	US
Kind code	B2
Filing date	Feb 20, 2015
Priority date	Dec 21, 2007
Publication date	Aug 2, 2016
Grant date	Aug 2, 2016

Abstract

A laser light source comprises, in particular, a semiconductor layer sequence ( 10 ) having an active region ( 45 ) and a radiation coupling-out area ( 12 ) having a first partial region ( 121 ) and a second partial region ( 122 ) different than the latter, and a filter structure ( 5 ), wherein the active region ( 45 ) generates, during operation, coherent first electromagnetic radiation ( 51 ) having a first wavelength range and incoherent second electromagnetic radiation ( 52 ) having a second wavelength range, the coherent first electromagnetic radiation ( 51 ) is emitted by the first partial region ( 121 ) along an emission direction ( 90 ), the incoherent second electromagnetic radiation ( 52 ) is emitted by the first partial region ( 121 ) and by the second partial region ( 122 ), the second wavelength range comprises the first wavelength range, and the filter structure ( 5 ) at least partly attenuates the incoherent second electromagnetic radiation ( 52 ) emitted by the active region along the emission direction ( 90 ).

First claim

The invention claimed is:

1. A laser light source, comprising:
a semiconductor layer sequence having an active region and a radiation coupling out area having a first partial region and a second partial region different than the first partial region; and
a filter structure,
wherein
the active region generates, during operation, coherent first electromagnetic radiation having a first wavelength range and incoherent second electromagnetic radiation having a second wavelength range,
the coherent first electromagnetic radiation is emitted by the first partial region along an emission direction,
the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region,
the second wavelength range comprises the first wavelength range,
the filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction,
the filter structure comprises a filter layer applied on the radiation coupling-out area on the first partial region and on the second partial region, and
the filter layer comprises a non-transparent material on the second partial region and a transparent oxide, nitride or oxynitride on the first partial region, the transparent oxide, nitride or oxynitride being an oxide, nitride or oxynitride of the non-transparent material.

2. The laser light source as claimed in claim 1 , wherein the filter layer is embodied as a pinhole diaphragm having an opening, and wherein the opening is arranged above the first partial region.

3. A method for producing a laser light source, comprising the steps of:
A) providing a semiconductor layer sequence having an active region and a radiation coupling out area having a first and a second partial region, wherein
the active region generates, during operation, coherent first electromagnetic radiation having a first wavelength range and incoherent second electromagnetic radiation having a second wavelength range,
the coherent first electromagnetic radiation is emitted by the first partial region along an emission direction,
the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region,

B) applying a layer composed of a non-transparent material on the first and second partial regions, and
C) converting the layer comprising the non-transparent material on the first partial region into a transparent layer by inducing a photochemical and/or photothermal reaction in an oxygen and/or nitrogen atmosphere.

4. The method as claimed in claim 3 , wherein method step C comprises the following substep:
activating the semiconductor layer sequence for emitting the coherent first electromagnetic radiation and the incoherent second electromagnetic radiation.

5. The method as claimed in claim 3 , wherein the non-transparent material comprises at least one material from a group formed by silicon, gallium, germanium, aluminum, chromium and titanium.

6. The method as claimed in claim 3 , wherein in the layer comprising the non-transparent material, the photochemical conversion produces a transparent oxide, nitride or oxynitride on the first partial region.

7. The method as claimed in claim 3 , wherein the non-transparent material on the first partial region is evaporated by the photothermal conversion.

8. The method as claimed in claim 3 , having the further method step of
D) applying a passivation layer on the layer comprising the non-transparent material.

9. The method as claimed in claim 8 , wherein the passivation layer comprises an oxide, nitride or oxynitride.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Lell Alfred
• Eichler Christoph
• Schmid Wolfgang
• Tautz Soenke
• Reill Wolfgang
• Dini Dimitri

Classifications

• H01S5/0078 Primary

  for frequency filtering · CPC title

• H01S5/1078

  with means to control the spontaneous emission, e.g. reducing or reinjection · CPC title

• H01S5/0282

  Passivation layers or treatments · CPC title

• H01S5/1092

  Multi-wavelength lasing · CPC title

• H01S5/0286

  Coatings with a reflectivity that is not constant over the facets, e.g. apertures · CPC title