Material for forming passivation film for semiconductor substrate, passivation film for semiconductor substrate and method of producing the same, and photovoltaic cell element and method of producing the same

Patent metadata

Field	Value
Publication number	US-9406834-B2
Application number	US-201414269152-A
Country	US
Kind code	B2
Filing date	May 4, 2014
Priority date	May 26, 2011
Publication date	Aug 2, 2016
Grant date	Aug 2, 2016

Abstract

The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.

First claim

What is claimed is:

1. A method for passivating a semiconductor substrate, comprising: forming a passivation film on the semiconductor substrate, the passivation film being formed from a material comprising a polymer compound having an anionic group or a cationic group, wherein the anionic group is selected from the group consisting of a sulfonic acid group, a phosphoric acid group, and a phosphonic acid group.

2. The method of claim 1 , wherein the polymer compound has a main chain formed from carbon and at least one element selected from the group consisting of hydrogen, fluorine, oxygen and sulfur.

3. The method of claim 1 , wherein the polymer compound has a main chain formed from carbon and at least one element selected from the group consisting of hydrogen, oxygen and sulfur.

4. The method of claim 1 , wherein the polymer compound has an aromatic group.

5. The method of claim 1 , wherein the polymer compound has a main chain formed from carbon and fluorine.

6. The method of claim 1 , wherein the polymer compound has a conductivity of 1 mS/cm or more in water at 25° C.

7. The method of claim 1 , wherein the polymer compound has a sulfonic acid group.

8. The method of claim 1 , wherein the material for forming the passivation film further comprises a liquid medium.

9. The method of claim 8 , wherein the liquid medium comprises at least one selected from the group consisting of methanol, ethanol, 1-propanol and 2-propanol.

10. The method of claim 1 , wherein the semiconductor substrate is a substrate for a photovoltaic cell.

11. The method according to claim 1 , wherein the semiconductor substrate has a pn junction and an electrode formed thereon.

12. A method according to claim 1 , and which is incorporated in a process for producing a photovoltaic cell element.

13. A method for passivating a semiconductor substrate, comprising: forming a passivation film on the semiconductor substrate, the passivation film being formed from a material comprising a polymer compound having an anionic group or a cationic group, wherein the polymer compound is at least one selected from the group consisting of a polyperfluoroolefin sulfonic acid derivative, a sulfonated polystyrene derivative and a sulfonated polyarylethersulfone.

14. The method of claim 13 , further comprising applying hydrofluoric acid to the semiconductor substrate prior to the formation of the coating layer.

15. A method for passivating a semiconductor substrate, comprising: forming a passivation film on the semiconductor substrate, the passivation film being formed from a material comprising a polymer compound having an anionic group or a cationic group, wherein the material for forming the passivation film further comprises a filler.

16. The method of claim 15 , wherein the filler comprises an inorganic filler.

17. The method of claim 16 , wherein the inorganic filler comprises at least one selected from the group consisting of Al 2 O 3 , SiO 2 , ZrO 2 , TiO 2 , SiC, MgO, zeolite, AlN and BN.

18. The method of claim 16 , wherein the inorganic filler comprises SiO 2 .

19. The method of claim 15 , wherein the filler has a weight-average particle size (50% D) of from 10 nm to 30 μm.

20. The method of claim 15 , wherein a content of the filler with respect to a total content of the polymer compound is from 0.1% by mass to 200% by mass.

21. A method for passivating a semiconductor substrate, comprising: forming a passivation film on the semiconductor substrate, the passivation film being formed from a material comprising a polymer compound having an anionic group or a cationic group, wherein the material for forming the passivation film further comprises a metal alkoxide.

22. The method of claim 21 , wherein the metal alkoxide comprises a silicon alkoxide.

23. The method of claim 21 , wherein the material for forming the passivation film further comprises at least one acidic compound.

24. The method of claim 21 , wherein a content of the metal alkoxide with respect to a total content of the polymer compound is from 0.1% by mass to 200% by mass.

25. The method of claim 21 , further comprising applying hydrofluoric acid to the semiconductor substrate prior to the formation of the coating layer.

Assignees

• Hitachi Chemical Co Ltd

Inventors

• Orita Akihiro
• Yoshida Masato
• Nojiri Takeshi
• Machii Yoichi
• Iwamuro Mitsunori
• Adachi Shuichiro
• Sato Tetsuya
• Tanaka Toru

Classifications

• H10P50/642

  Chemical etching · CPC title

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

• H10P14/683

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title

• H10W74/137

  the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence) · CPC title

• H10W74/47

  comprising organic materials, e.g. plastics or resins · CPC title