Simple and cost-free MTP structure

Patent metadata

Field	Value
Publication number	US-9406764-B2
Application number	US-201514684298-A
Country	US
Kind code	B2
Filing date	Apr 10, 2015
Priority date	Jun 27, 2013
Publication date	Aug 2, 2016
Grant date	Aug 2, 2016

Abstract

Embodiments of a simple and cost-free multi-time programmable (MTP) structure for non-volatile memory cells are presented. The memory cell includes a substrate prepared with an isolation well, a HV well region and first and second wells disposed in the substrate. The memory cell further includes a first transistor having a select gate and a second transistor having a floating gate adjacent to one another and disposed over the second well. The transistors include first and second diffusion regions disposed adjacent to the sides of the gates. A control gate is disposed over the first well and coupled to the floating gate. The control and floating gates include the same gate layer extending across the first and second wells. The control gate includes a capacitor.

First claim

What is claimed is:

1. A non-volatile (NV) multi-time programmable (MTP) memory cell comprising:
a substrate prepared with first and second isolation wells, wherein the second isolation well is disposed within the first isolation well;
first and second wells disposed within the second isolation well;
a first transistor having a select gate and a second transistor having a floating gate adjacent to one another and disposed over the second well, the transistors comprise first and second diffusion regions disposed adjacent to the sides of the gates; and
a control gate disposed over the first well, wherein
the control gate is coupled to the floating gate and the control and floating gates comprise the same gate layer extending across the first and second wells,
the control gate comprises a capacitor, and
the second isolation well is configured to improve isolation of the first well during device operation.

2. The memory cell of claim 1 wherein the first well is of a first polarity type and the second well is of a second polarity type different from the first polarity type.

3. The memory cell of claim 2 wherein the first well is an n-type well and the second well is a p-type well, wherein each of the floating gate and the select gate comprises an n-type metal oxide-semiconductor (NMOS), and wherein the control gate comprises an n-type capacitor.

4. The memory cell of claim 3 wherein the memory cell is programmable by Fowler-Nordheim (FN) tunneling effect.

5. The memory cell of claim 3 wherein the memory cell is erasable by FN tunneling effect.

6. The memory cell of claim 3 comprising a capacitor contact plug coupled to the first well.

7. The memory cell of claim 1 wherein the second isolation well comprises a high voltage (HV) well region, wherein the HV well region comprises a depth deeper than the first and second wells.

8. The memory cell of claim 7 wherein the first isolation well comprises a depth deeper than the HV well region.

9. The memory cell of claim 8 wherein the HV well region is of a second polarity type and the first isolation well is of a first polarity type different from the second polarity type.

10. The memory cell of claim 9 wherein the HV well region is a common well region of a memory array.

11. The memory cell of claim 8 wherein the first well is of a first polarity type different from the second polarity type HV well region.

12. The memory cell of claim 1 comprising a native layer disposed in the substrate between the first and second wells.

13. The memory cell of claim 1 wherein the second isolation well comprises a high voltage (HV) well region, the first well serves as a capacitor well and the second well serves as a transistor well.

14. The memory cell of claim 13 wherein the HV well region is a common HV well encompassing memory cells of a memory array.

15. The memory cell of claim 14 wherein the first well comprises a first polarity type and the HV well region is of a second polarity type different from the first polarity type.

16. The memory cell of claim 14 wherein the memory array comprises an AND-type configuration.

17. The memory cell of claim 14 wherein the memory array comprises a NOR-type configuration.

18. The memory cell of claim 13 comprising a native layer between the first and second wells.

19. The memory cell of claim 13 wherein:
the first isolation well comprises a first polarity type; and
the HV well region comprises a second polarity type.

20. The memory cell of claim 18 wherein the substrate comprises at least a cell isolation region having a shallow isolation trench (STI) region which separates the first and second wells, wherein the native layer underlaps the cell isolation region and is an intrinsically doped layer.

Assignees

• Globalfoundries Sg Pte Ltd

Inventors

• Shum Danny Pak-Chum
• Poh Yong Wee Francis
• Singh Upinder
• Sun Yuan
• Maung Maung Myo Aung

Classifications

• H10D30/685

  from the channel · CPC title

• H10D30/683

  programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling · CPC title

• H10D30/681

  having only two programming levels (Floating gate IGFETs programmable by two single electrons H10D30/688) · CPC title

• H10D30/0411

  of FETs having floating gates · CPC title

• H10D30/6891 Primary

  characterised by the shapes, relative sizes or dispositions of the floating gate electrode · CPC title