Metal gates for semiconductor devices and method thereof
US-2024429281-A1 · Dec 26, 2024 · US
Method for making strained semiconductor device and related methods
US9406751B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9406751-B2 |
| Application number | US-201414296818-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 5, 2014 |
| Priority date | Jun 5, 2014 |
| Publication date | Aug 2, 2016 |
| Grant date | Aug 2, 2016 |
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Abstract
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A method for making a semiconductor device is provided. Raised source and drain regions are formed with a tensile strain-inducing material, after thermal treatment to form source drain extension regions, to thereby preserve the strain-inducing material in desired substitutional states.
First claim
Opening claim text (preview).
That which is claimed is: 1. A method for making a semiconductor device comprising: forming alternating first and second semiconductor channel layers between adjacent pairs of STI regions over an oxide layer on a substrate, the first semiconductor channel layer comprising a first semiconductor material and the second channel layer comprising a second semiconductor material different than the first semiconductor material; forming a respective gate over each of the first and secon…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9406751B2 cover?
- A method for making a semiconductor device is provided. Raised source and drain regions are formed with a tensile strain-inducing material, after thermal treatment to form source drain extension regions, to thereby preserve the strain-inducing material in desired substitutional states.
- Who is the assignee on this patent?
- St Microelectronics Inc, Globalfoundries Inc, IBM, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10D84/0167. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 02 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).