Flexible display device and curved display device

Patent metadata

Field	Value
Publication number	US-9406703-B2
Application number	US-201414532590-A
Country	US
Kind code	B2
Filing date	Nov 4, 2014
Priority date	Nov 6, 2013
Publication date	Aug 2, 2016
Grant date	Aug 2, 2016

Abstract

Provided is a configuration for a semiconductor layer and a line for reducing the segment length of the semiconductor layer with respect to the bending direction of the flexible substrate. Such a configuration reduces the probability of cracks occurring in the semiconductor layer of the thin-film transistor, thereby improving the stability and durability of the thin-film transistor employed in a curved or a flexible display device. The configuration includes a thin-film transistor (TF) on the flexible substrate. The TFT includes the semiconductor layer extending obliquely with respect to the direction of the line.

First claim

What is claimed is:

1. A display device, comprising:
a flexible substrate;
a data line or a gate line on the flexible substrate; and
a thin-film transistor (TFT) on the flexible substrate,
wherein the TFT includes a semiconductor layer extending obliquely with respect to a direction of the data line or gate line,
wherein the semiconductor layer has a rectangular shape with its length extended at an angle between 30° and 60° with respect to the direction of the data line or the gate line.

2. The display device according to claim 1 , wherein the TFT comprises a gate electrode, a source electrode and a drain electrode connected to the data line or the gate line, and at least one among the gate electrode, the source electrode and the drain electrode has a rectangular portion with its length extending obliquely with respect to the direction of the data line or the gate line.

3. The display device according to claim 1 , wherein the TFT comprises a gate electrode, a source electrode and a drain electrode, and at least one among the gate electrode, the source electrode and the drain electrode includes a first part extending in a first direction and a second part extending in a second direction different from the first direction.

4. The display device according to claim 1 , wherein the data line or the gate line has one of a triangular wave trace shape, a square wave trace shape, a sinusoidal wave trace shape, and a diamond trace shape.

5. The display device according to claim 1 , wherein a width of the data line or the gate line varies periodically.

6. The display device according to claim 1 , wherein the flexible substrate is bendable in a direction parallel to the direction of the data line or the gate line.

7. The display device according to claim 1 , wherein the flexible substrate is bent in a direction parallel to the direction of the data line or the gate line and fixed in the bent state.

8. The display device according to claim 1 , wherein a bending direction of the flexible substrate is different from the direction of the data line or the gate line.

9. The display device according to claim 1 , wherein the gate line and the data line is orthogonal to each other.

10. A display device, comprising:
a flexible substrate; and
a data line or the gate line on the flexible substrate; and
a thin-film transistor (TFT) on the flexible substrate,
wherein a semiconductor layer of the TFT includes an elongated first portion and an elongated second portion, the first portion extending in a first direction oblique to a direction of the date line or the gate line and the second portion extending in a second direction oblique to the direction of the date line or the gate line,
wherein the semiconductor layer has a rounded corner in between the first and second portions.

11. The display device according to claim 10 , wherein the first direction and the second direction make an acute angle with respect to the extending direction of the date line or the gate line.

12. The display device according to claim 10 , wherein the first direction and the second direction form a right angle with respect to each other.

13. The display device according to claim 10 , wherein the TFT comprises a gate electrode, a source electrode and a drain electrode connected to the data line or the gate line, the gate electrode includes a part with a shape corresponding to the shape of the semiconductor layer.

14. The display device according to claim 10 , wherein the TFT comprises a gate electrode, a source electrode and a drain electrode connected to the data line or the gate line, and at least one among the gate electrode, the source electrode and the drain electrode has a rectangular portion with its length extending obliquely with respect to the direction of the data line or the gate line.

15. The display device according to claim 10 , wherein the TFT comprises a gate electrode, a source electrode and a drain electrode, and at least one among the gate electrode, the source electrode and the drain electrode includes a first part extending in a third direction and a second part extending in a fourth direction different from the third direction.

16. The display device according to claim 10 , wherein the data line or the gate line has one of a triangular wave trace shape, a square wave trace shape, a sinusoidal wave trace shape, and a diamond trace shape.

17. The display device according to claim 10 , wherein a width of the data line or the gate line varies periodically.

18. The display device according to claim 10 , wherein the flexible substrate is bendable in a direction parallel to the direction of the data line or the gate line.

19. The display device according to claim 10 , wherein the flexible substrate is bent in a direction parallel to the direction of the data line or the gate line and fixed in the bent state.

20. The display device according to claim 10 , wherein a bending direction of the flexible substrate is different from the direction of the data line or the gate line.

Assignees

• Lg Display Co Ltd

Inventors

• Kwon Seyeoul
• Youn Sangcheon
• Ha Anna

Classifications

• H10D30/674

  characterised by the active materials · CPC title

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• H10D86/443

  adapted for preventing breakage, peeling or short circuiting · CPC title

• H10D86/423

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title

• H10D86/421

  having a particular composition, shape or crystalline structure of the active layer · CPC title