Semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9406694-B1
Application number	US-201514844036-A
Country	US
Kind code	B1
Filing date	Sep 3, 2015
Priority date	May 29, 2015
Publication date	Aug 2, 2016
Grant date	Aug 2, 2016

Abstract

According to one embodiment, a semiconductor device includes a metal layer containing boron, a semiconductor film extending in a direction intersecting with a direction in which the metal layer extends, a charge storage film provided between the semiconductor film and the metal layer, a first dielectric film provided between the charge storage film and the metal layer, and a nitride film provided between the first dielectric film and the metal layer. The nitride film includes a first titanium nitride film provided in contact with the first dielectric film, a second titanium nitride film provided in contact with the metal layer, and an amorphous nitride film provided between the first titanium nitride film and the second titanium nitride film.

First claim

What is claimed is:

1. A semiconductor device comprising:
a metal layer containing boron;
a semiconductor film extending in a direction intersecting with a direction in which the metal layer extends;
a charge storage film provided between the semiconductor film and the metal layer;
a first dielectric film provided between the charge storage film and the metal layer; and
a nitride film provided between the first dielectric film and the metal layer,
the nitride film including
a first titanium nitride film provided in contact with the first dielectric film,
a second titanium nitride film provided in contact with the metal layer, and
an amorphous nitride film provided between the first titanium nitride film and the second titanium nitride film.

2. The device according to claim 1 , wherein the amorphous nitride film is one of a silicon nitride film and an aluminum nitride film.

3. The device according to claim 1 , wherein
a plurality of metal layers are stacked between a plurality of insulating layers, and
the semiconductor film extends inside a stacked body including the plurality of metal layers and the plurality of insulating layers, in a stacking direction of the stacked body.

4. The device according to claim 3 , wherein the nitride film is further provided between the metal layer and the insulating layer.

5. The device according to claim 1 , wherein the first dielectric film includes an aluminum oxide film provided in contact with the nitride film.

6. The device according to claim 1 , wherein the metal layer contains at least one of tungsten and molybdenum.

7. A semiconductor device comprising:
a metal layer containing boron;
a semiconductor film extending in a direction intersecting with a direction in which the metal layer extends;
a charge storage film provided between the semiconductor film and the metal layer;
a first dielectric film provided between the charge storage film and the metal layer; and
a nitride film provided between the first dielectric film and the metal layer,
the nitride film including
a titanium nitride film provided in contact with the first dielectric film, and
an amorphous nitride film provided between the titanium nitride film and the metal layer, the amorphous nitride film containing titanium, an element different to titanium, and nitrogen.

8. The device according to claim 7 , wherein the amorphous nitride film is one of a titanium silicon nitride film and a titanium aluminum nitride film.

9. The device according to claim 7 , wherein
a plurality of metal layers are stacked between a plurality of insulating layers, and
the semiconductor film extends inside a stacked body including the plurality of metal layers and the plurality of insulating layers, in a stacking direction of the stacked body.

10. The device according to claim 9 , wherein the nitride film is further provided between the metal layer and the insulating layer.

11. The device according to claim 7 , wherein the first dielectric film includes an aluminum oxide film provided in contact with the nitride film.

12. The device according to claim 7 , wherein the metal layer contains at least one of tungsten and molybdenum.

Assignees

• Toshiba Kk

Inventors

• Ikeno Daisuke
• Kitamura Masayuki
• Sakata Atsuko

Classifications

• H10W20/035

  combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers · CPC title

• H10W10/021

  of air gaps · CPC title

• H10W10/20

  Air gaps · CPC title

• H10D64/693

  the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials · CPC title

• H10D64/691

  comprising metallic compounds, e.g. metal oxides or metal silicates  (insulators comprising nitrogen H10D64/693) · CPC title