Neural network computation circuit, control circuit therefor, and control method therefor
US-2024411520-A1 · Dec 12, 2024 · US
US9406368B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9406368-B2 |
| Application number | US-201414159798-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 21, 2014 |
| Priority date | Jan 21, 2014 |
| Publication date | Aug 2, 2016 |
| Grant date | Aug 2, 2016 |
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Systems and methods to manage memory on a spin transfer torque magnetoresistive random-access memory (STT-MRAM) are provided. A particular method of managing memory includes determining a temperature associated with the memory and determining a level of write queue utilization associated with the memory. A write operation may be performed based on the level of write queue utilization and the temperature.
Opening claim text (preview).
The invention claimed is: 1. An apparatus comprising: a memory storing data and program code; a temperature sensor configured to determine a temperature associated with the memory; and a controller in communication with the memory and the temperature sensor, the controller configured to: receive the temperature; execute the program code to determine a level of write queue utilization associated with the memory; and perform a write operation based on the temperature and based on whether the level of write queue utilization has reached a high water mark indicator, wherein the high water mark indicator is incremented in response to receiving a first write request and decremented in response to writing a second write request to the memory. 2. The apparatus of claim 1 , further comprising a false write queue configured to generate a false write request during the write operation. 3. The apparatus of claim 1 , wherein the high water mark indicator corresponds to a threshold number of requests in the write queue. 4. The apparatus of claim 1 , wherein the controller is further configured to adjust a programming pulse width during the write operation. 5. The apparatus of claim 1 , further comprising a multiplexer configured to receive the high water mark indicator as a first input, and to receive a second input from a false write queue. 6. A non-transitory computer readable storage medium comprising instructions, that when executed by a processor, cause the processor to: determine a temperature associated with a memory; determine a level of write queue utilization associated with the memory; and determine a write operation based on the temperature and based on whether the level of write queue utilization has reached a high water mark indicator, wherein the high water mark indicator is incremented in response to receiving a first write request and decremented in response to writing a second write request to the memory. 7. The apparatus of claim 1 , wherein the controller is further configured to stop false writes when the temperature associated with the memory reaches a particular temperature. 8. The apparatus of claim 1 , wherein the controller is further configured to increase the temperature associated with the memory by performing a false write operation when the level of write queue utilization is less than the high water mark indicator. 9. The apparatus of claim 1 , wherein the high water mark indicator corresponds to a programmable threshold value. 10. The apparatus of claim 1 , wherein the controller is further configured to determine that the temperature associated with the memory is less than a latency-determining threshold value. 11. The apparatus of claim 1 , wherein the controller is further configured to perform a bulk write operation that services multiple write requests. 12. A non-transitory computer readable storage medium comprising instructions, that when executed by a processor, cause the processor to: determine a temperature associated with a memory; determine a level of write queue utilization associated with the memory; and determine whether to perform a false write operation based on the temperature and based on whether the level of write queue utilization has reached a high water mark indicator, wherein the high water mark indicator is incremented in response to receiving a first write request and decremented in response to writing a second write request to the memory. 13. The apparatus of claim 1 , wherein the controller is further configured to: adjust a programming pulse width based on the temperature in response to determining that the temperature is greater than a latency-determining threshold; and perform a bulk write operation based on the programming pulse width.
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