AF-mode STO with negative Hk spin polarization layer

Patent metadata

Field	Value
Publication number	US-9406315-B2
Application number	US-201414179358-A
Country	US
Kind code	B2
Filing date	Feb 12, 2014
Priority date	Feb 12, 2014
Publication date	Aug 2, 2016
Grant date	Aug 2, 2016

Abstract

The embodiments disclosed generally relate to an STO structure for a magnetic head. The STO structure has an FGL having a greater thickness than the SPL. The SPL may have multiple layers. In one embodiment, a MAMR head comprises a main pole; a trailing shield; and an STO coupled between the main pole and the trailing shield. The STO includes: a first magnetic layer having a first thickness; a non-magnetic spacer layer coupled to the first magnetic layer; and a second magnetic layer having a second thickness and coupled to the non-magnetic spacer layer, wherein the first thickness is greater than the second thickness, wherein a current is charged from the first magnetic layer to the second magnetic layer, and wherein a vertical magnetic anisotropy field of the second magnetic film is less than 0 kOe.

First claim

What is claimed is:

1. A MAMR head, comprising:
a main pole;
a trailing shield; and
an STO coupled between the main pole and the trailing shield, wherein the STO includes:
a first nonmagnetic layer;
a first magnetic layer having a first thickness, wherein the first magnetic layer is coupled to the first nonmagnetic layer, wherein the first magnetic layer comprises a laminate structure containing FeCo alloy;
a non-magnetic spacer layer coupled to the first magnetic layer;
a second magnetic layer having a second thickness and coupled to and in direct contact with the non-magnetic spacer layer, wherein the second magnetic layer is a single layer, wherein the first thickness is greater than the second thickness, wherein a current is charged from the first magnetic layer to the second magnetic layer, and wherein a vertical magnetic anisotropy field of the second magnetic film is less than 0 kOe, and
a second non-magnetic layer in direct contact with the second magnetic layer.

2. The MAMR head of claim 1 , wherein the first magnetic layer is located closer to the main pole than the second magnetic layer.

3. The MAMR head of claim 1 , wherein the second thickness is 4.0 nm to 0.6 nm.

4. The MAMR head of claim 1 , wherein the second magnetic layer is selected from the group consisting of Co 1-x Ir x where x=8-38 at % and Fe 1-y C y where y=1.5-8 at %.

5. The MAMR head of claim 1 , wherein the vertical anisotropy field of the second magnetic layer is between 0 kOe and −17 kOe.

6. The MAMR head of claim 5 , wherein the first magnetic layer is located closer to the main pole than the second magnetic layer.

7. The MAMR head of claim 5 , wherein the second thickness is 4.0 nm to 0.6 nm.

8. The MAMR head of claim 7 , wherein the first magnetic layer is located closer to the main pole than the second magnetic layer.

9. The MAMR head of claim 5 , wherein the second magnetic layer is selected from the group consisting of Co 1-x Ir x where x=8-38 at % and Fe 1-y C y where y=1.5-8 at %.

10. The MAMR head of claim 9 , wherein the first magnetic layer is located closer to the main pole than the second magnetic layer.

11. The MAMR head of claim 10 , wherein the first thickness is between about 4.0 nm and about 10 nm.

12. The MAMR head of claim 11 , wherein the non-magnetic spacer layer comprises copper.

13. The MAMR head of claim 9 , wherein the second thickness is 4.0 nm to 0.6 nm.

14. The MAMR head of claim 13 , wherein the first thickness is between about 4.0 nm and about 10 nm.

15. The MAMR head of claim 14 , wherein the first magnetic layer is located closer to the main pole than the second magnetic layer.

Assignees

• HGST Netherlands BV

Inventors

• Shiimoto Masato
• Igarashi Masukaza
• Nagasaka Keiichi
• Sato Yo

Classifications

• G11B5/1278 Primary

  specially adapted for magnetisations perpendicular to the surface of the record carrier · CPC title

• G11B5/3146

  magnetic layers · CPC title

• G11B5/235

  Selection of material for gap filler {(G11B5/232 takes precedence)} · CPC title

• G11B2005/0024

  Microwave assisted recording · CPC title