Scratch detection method and apparatus

Patent metadata

Field	Value
Publication number	US-9406115-B2
Application number	US-201113806360-A
Country	US
Kind code	B2
Filing date	Jun 30, 2011
Priority date	Jul 3, 2010
Publication date	Aug 2, 2016
Grant date	Aug 2, 2016

Abstract

A method of identifying discontinuities in the surface of a substrate is herein disclosed. An object plane of an imaging system is positioned at a focal position associated with a discontinuity and an image is captured, the discontinuity having a relatively higher contrast with respect to the remainder of the surface of the substrate. The discontinuity is thereby more readily discernable than when the focal plane is positioned at the surface of the substrate. Analysis of discontinuities may include the extraction of discontinuity characteristics.

First claim

What is claimed is:

1. A method of inspecting a surface of a semiconductor substrate, comprising:
identifying a potential discontinuity of interest that may appear at the surface of the substrate;
determining a range of focal distances above the surface of the substrate and above the potential discontinuity of interest where light reflected from the potential discontinuity of interest is likely to be focused, the determined range of focal distances being at least partially different than a nominal focal distance of a system used for inspecting the surface of the semiconductor substrate at which the surface of the semiconductor substrate is substantially in focus;
positioning a focal plane of an imaging system with the range of focal distances;
capturing an image of the substrate; determining the presence of a discontinuity of interest on the substrate, if any, based on a level of contrast in the captured image between the discontinuity of interest and a background of the image; and
characterizing the discontinuity of interest on the substrate, if any, by correlating a focal distance of the discontinuity of interest with a discontinuity characteristic including determining a depth and at least one of a width, a geometry, and a topography of the discontinuity based on the focal distance.

2. The method of claim 1 , further comprising repeating the positioning, imaging and discontinuity determining steps at multiple focal position.

3. The method of claim 1 , wherein the focal plane is positioned as to exclude the surface of the substrate.

4. The method of claim 1 , further comprising providing an imaging system that is a microscope.

5. The method of claim 1 , further comprising providing an imaging system that operates on a confocal principle.

6. The method of claim 1 , further comprising:
positioning the focal plane of the imaging system substantially at a surface of the substrate;
capturing an image of the substrate; and
determining the presence of a defect in a structure formed on the surface of the substrate.

7. The method of claim 1 wherein the characterizing comprises determining characteristics selected from a group consisting of position, orientation, length, width, depth, aspect ratio, and the number of discontinuities per unit area of the substrate.

8. The method of claim 1 , further comprising correlating a characteristic of the discontinuity of interest with a process step to which the substrate has previously been subjected.

9. The method of claim 8 wherein the process step is selected from a group consisting of chemical mechanical planarization, lithography, etching, thermal processing, and handling a substrate.

10. The method of claim 1 , further comprising correlating the presence of a discontinuity of interest with a process step to which the substrate has previously been subjected.

11. A method of inspecting a semiconductor substrate for discontinuities, comprising:
positioning a focal plane of an imaging system above a surface of the substrate such that the surface of the substrate and one or more discontinuities in or on the surface of the substrate are out of focus to the imaging system, the focal plane of the imaging system simultaneously being coincident with a range of focal distances where light returned from the one or more discontinuities is likely to be focused, the range of focal distances being at least partially different than a nominal focal distance of a system used for inspecting the surface of the semiconductor substrate at which the surface of the semiconductor substrate is substantially in focus;
capturing an image of the substrate and the discontinuity, if any; and
processing the image to identify the discontinuity based on a level of contrast in the captured image between the discontinuity and a background of the image; and
correlating a focal distance of a discontinuity with a discontinuity characteristic including determining a depth and at least one of a width, a geometry, and a topography of the discontinuity based on the focal distance.

12. The method of claim 11 , further comprising positioning the focal plane of the imaging system at at least one other position in which the focal plane of the imaging system is coincident with a second range of focal distances.

13. The method of claim 11 , wherein the imaging system is selected from a group consisting of a light microscope, a scanning confocal microscope, and a chromatic confocal microscope.

14. The method of claim 11 , further comprising:
performing at least one inspection with the focal plane of the imaging system out of focus with respect to the surface of the substrate; and
performing at least one inspection with the focal plane of the imaging system in focus with respect to the surface of the substrate.

15. The method of claim 11 , further comprising:
reporting the discontinuity characteristic.

16. The method of claim 11 , further comprising correlating a focal distance of a discontinuity with a characteristic of a cause of the discontinuity.

17. A method of determining an effective depth of a reflective discontinuity in a surface, comprising:
capturing a plurality of images of the surface, each image in the plurality corresponding to the same lateral two-dimensional area on the surface under inspection, each image in the plurality corresponding to a different longitudinal height with respect to the surface;
identifying a discontinuity within the lateral area on the surface;
recording image-to-image variations in brightness of the discontinuity within the plurality of images as a function of the longitudinal height;
determining a longitudinal height that corresponds to a maxima in the variation in brightness, wherein the determined longitudinal height is different from a longitudinal height of a nominal focal point of the surface; and
determining at least one geometric characteristic of the discontinuity including an effective depth of the discontinuity in the surface based on the determined longitudinal height.

18. The method of claim 1 , wherein the potential discontinuity of interest comprises a scratch.

19. The method of claim 11 , wherein the discontinuity comprises a scratch.

Assignees

• Zhou Wei
• Grant Michael
• Rudolph Tech Inc

Inventors

• Zhou Wei
• Grant Michael

Classifications

• G06T7/0004 Primary

  Industrial image inspection · CPC title

• G02B21/006 Primary

  focusing arrangements; selection of the plane to be imaged · CPC title