Method for validating measurement data

Patent metadata

Field	Value
Publication number	US-9404743-B2
Application number	US-201213666140-A
Country	US
Kind code	B2
Filing date	Nov 1, 2012
Priority date	Nov 1, 2012
Publication date	Aug 2, 2016
Grant date	Aug 2, 2016

Abstract

A method is provided for validating measurement data, such as data obtained from a scanning electron microscope using in a semiconductor fabrication facility. The method includes applying a signal on a material feature by using a source in a measurement tool having a tool setting parameter, collecting a response signal from the material feature by using a detector in the measurement tool to obtain the measurement data, calculating a simulated response signal by a smart, and validating the measurement data by comparing the collected response signal with the simulated response signal. The system also includes a design database having a design feature, a measurement tool collecting a response signal, and a smart review engine configured to connect the measurement tool and the design database. The smart engine generates a simulated response signal using the design feature and a measurement tool setting parameter so that the measurement is validated by comparing a collected response signal and a simulated response signal.

First claim

What is claimed is:

1. A method for forming features on a substrate, the method comprising:
receiving, into a measurement tool, the substrate having a material feature, where in the material feature is formed on the substrate according to a design feature;
applying a source signal on the material feature by using a source in the measurement tool having a tool setting parameter;
collecting a response signal from the material feature by using a detector in the measurement tool to obtain measurement data;
with a computer connected to the measurement tool, calculating a simulated response signal from the design feature using the tool setting parameter; and
with the computer, comparing the collected response signal with the simulated response signal; and
with the computer, in response to determining that a difference between the collected response signal and the simulated response signal exceeds a predetermined value, causing the measurement tool to re-measure the material feature.

2. The method of claim 1 , wherein applying a source signal includes applying an optical, electronic, or mechanical signal.

3. The method of claim 2 , wherein collecting a response signal includes collecting a responded optical, electronic, or mechanical signal.

4. The method of claim 3 , wherein collecting the response signal comprises collecting a secondary electron signal with a scanning electron microscope (SEM) tool.

5. The method of claim 1 , wherein calculating the simulated response signal includes calculating a simulated response optical, electronic, or mechanical signal.

6. The method of claim 5 , wherein calculating the simulated response signal comprises calculating a simulated secondary electron signal.

7. The method of claim 1 , wherein comparing the collected response signal to the simulated response signal includes calculating the difference between the collected response signal and the simulated response signal.

8. The method of claim 7 , further comprising evaluating the difference to determine if it is within the predetermined value.

9. The method of claim 8 , further comprising presenting the measurement as a good measurement if the difference is smaller than the predetermined value.

10. A method comprising:
with a computer connected to a measurement tool, receiving a design data having design feature, wherein a material feature is formed on a substrate according to the design feature;
with the measurement tool, performing a measurement on the material feature by applying an electron beam on the material feature and collecting a secondary electron signal from the material feature using a scanning electron microscope (SEM) tool having a tool setting parameter;
with the computer, executing a simulation using the design feature and the tool setting parameter to generate a simulated secondary electron signal; and
with the computer, comparing the collected secondary electron signal and the simulated secondary electron signal; and
in response to determining that a difference between the collected secondary electron signal and the simulated secondary electron signal exceeds a predetermined value, re-measuring the material feature with the measurement tool.

11. The method of claim 10 , further comprising calculating a difference between the collected secondary electron signal and the simulated secondary electron signal.

12. The method of claim 11 , further comprising comparing the difference to the predetermined value.

13. The method of claim 12 , wherein further comparing passing the measurement if the difference is smaller than the predetermined value.

14. A system for validating a measurement data, the system comprising:
a design database having a design feature;
a measurement tool connected to the design database, the measurement tool having a tool setting parameter, the measurement tool configured to:
with a source, generate a source signal on a material feature corresponding to the design feature; and
with a detector, collect a response signal from the material feature to obtain a measurement of the material feature; and

a computer connected to the measurement tool and the design database, wherein the computer is configured to:
generate a simulated response signal using the design feature and the tool setting parameter; and
cause the measurement tool to re-measure the material feature in response to determining that a difference between the response signal and the simulated response signal exceeds a predetermined value.

15. The system of claim 14 , wherein the source signal includes an optical, mechanical, electronic signal, or combination thereof.

16. The system of claim 14 , wherein the response signal includes an optical, mechanical, electronic signal, or combination thereof.

17. The system of claim 15 , wherein the simulated response signal includes a simulated response optical, mechanical, electronic signal, or combination thereof.

18. The system of claim 17 , wherein the simulated response signal comprises a simulated secondary electron signal profile.

19. The method of claim 1 , wherein the simulated response signal comprises a summed simulated response signal.

20. The method of claim 10 , wherein executing the simulation comprises multiple scans with a simulated scanning electron beam.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chiu Chui-Jung
• Lo Jen-Chieh
• Cheng Ying-Chou
• Liu Ru-Gun

Classifications

• G05B2219/37224

  Inspect wafer · CPC title

• G01B15/00 Primary

  Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons (characterised by the use of optical techniques G01B9/00, G01B11/00) · CPC title

• G05B2219/37127

  Spm scanning probe microscopy, stm scanning tunneling microscopy · CPC title

• G01B15/04 Primary

  for measuring contours or curvatures · CPC title

• H01J37/28

  with scanning beams {(H01J37/268, H01J37/292, H01J37/2955 take precedence)} · CPC title