Catalysts and methods of use

Patent metadata

Field	Value
Publication number	US-9403154-B2
Application number	US-201214006537-A
Country	US
Kind code	B2
Filing date	Mar 22, 2012
Priority date	Mar 22, 2011
Publication date	Aug 2, 2016
Grant date	Aug 2, 2016

Abstract

The present invention relates to a catalyst comprising (i) a semiconductor preferably comprising one or more metal-(Group VIb) semiconductors, and (ii) a semiconductor material having elevated phosphorous content preferably comprising one or more metal-(Group VIb))-phosphorous species.

First claim

The claims defining the invention are as follows:

1. A method of preparing a semiconductor or a semiconductor material of a catalyst, the catalyst comprising:
the semiconductor, and
the semiconductor material having the formula M′ m′ A′ a′ P y wherein:
M′ is a metal,
A′ is a Group VIb species,
m′ has a value of between 1 and 5,
a′ has a value of between 1 and 5,
P is a phosphorous species, and
y has a value 0<y<5;
the method comprising the steps of:
preparing an aqueous solution comprising at least one principal electrolyte and at least one supporting electrolyte,
applying a source of energy to the aqueous solution, and
depositing the principal electrolyte, and optionally the supporting electrolyte at a cathode using electrolysis.

2. The method according to claim 1 wherein the supporting electrolyte is chosen from the group comprising primary, secondary, tertiary or quaternary nitrogen or phosphorous species or combinations thereof.

3. The semiconductor comprised in the catalyst prepared by the method of claim 1 .

4. The semiconductor material having phosphorous content comprised in the catalyst prepared by the method of claim 1 .

5. The method according to claim 1 wherein M′ is chosen from the group comprising Ti, Mo, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ir, Cd, In, Sn, the rare-earth metals, alone or in combination.

6. The method according to claim 1 wherein A′ is chosen from the group comprising oxygen, sulphur, selenium and tellurium.

7. A method of preparing a catalyst comprising a semiconductor and a semiconductor material having the formula M′ m ′ A′ a′ P y wherein:
M′ is a metal,
A′ is a Group VIb species,
m′ has a value of between 1 and 5,
a′ has a value of between 1 and 5,
P is a phosphorous species, and
y has a value 0<y<5

the method comprising preparation of the catalyst or the semiconductor or semiconductor material using the steps of:
preparing an ionic liquid comprising at least one electrolyte,
applying a source of energy to elevate the temperature of the ionic liquid to at least 130° C., and
depositing the at least one electrolyte at a cathode using electrolysis.

8. An electrodeposition process comprising the steps of:
preparing an ionic liquid comprising at least one electrolyte,
applying a source of energy to elevate the temperature of the ionic liquid to at least 130° C., and
depositing the at least one electrolyte at a cathode using electrolysis.

9. A process for splitting water into hydrogen and oxygen, the process including the step of suspending a photo-electro catalyst in water, the photo-electro catalyst comprising:
a semiconductor, and
a semiconductor material having the formula M′ m′ A′ a′ P y wherein:
M′ is a metal,
A′ is a Group VIb species,
m′ has a value of between 1 and 5,
a′ has a value of between 1 and 5,
P is a phosphorous species, and
y has a value 0<y <5.

Assignees

• Macfarlane Douglas
• Winther-Jensen Bjorn
• Izgorodin Alexey
• Univ Monash

Inventors

• Macfarlane Douglas
• Winther-Jensen Bjorn
• Izgorodin Alexey

Classifications

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• C25B1/04 Primary

  by electrolysis of water · CPC title

• C25B11/0478

  Chemistry & Metallurgy · mapped topic

• C25B1/003

  Chemistry & Metallurgy · mapped topic