Structure for a radio frequency power amplifier module within a radio frequency power amplifier package

Patent metadata

Field	Value
Publication number	US-9401682-B2
Application number	US-201414489868-A
Country	US
Kind code	B2
Filing date	Sep 18, 2014
Priority date	Apr 17, 2014
Publication date	Jul 26, 2016
Grant date	Jul 26, 2016

Abstract

A RF power amplifier module comprises a die with a RF power transistor and the RF power transistor comprises a control terminal, a transistor output terminal and a transistor reference terminal. The RF power amplifier module further comprises a module input terminal, a module output terminal and at least two module reference terminals being electrically coupled to the control terminal, the transistor output terminal and the transistor reference terminal, respectively. The RF power amplifier module further comprises an electrically isolating layer and a heat conducting element. The die is in thermal contact with the heat conducting element via the electrically isolating layer in order to transfer heat during operation of the RF power transistor to the heat conducting element.

First claim

The invention claimed is:

1. A radio frequency power amplifier module, comprising:
a die comprising a radio frequency power transistor, the radio frequency power transistor comprising a transistor control terminal, a transistor output terminal and a transistor reference terminal;
a plurality of module terminals at a first side of the die, for electrically connecting the die to an electronic circuit external to the radio frequency power amplifier module, the plurality of module terminals comprising: a module input terminal electrically coupled to the transistor control terminal, a module output terminal electrically coupled to the transistor output terminal and at least two module reference terminals being electrically coupled to the transistor reference terminal, the module input terminal and one of the at least two module reference terminals being located at a first lateral side of the first side of the die, and the module output terminal and another one of the at least two module reference terminals being located at a second lateral side of the first side of the die opposite to the first lateral side,
an electrically isolating layer and a heat conducting element, both being arranged at a second side of the die opposite to the first side, the heat conducting element having a die-facing surface which is physically separated and electrically isolated from the die by the electrically isolating layer, the die being in thermal contact with the heat conducting element via the electrically isolating layer for transferring heat generated during operation of the power amplifier transistor away from the die to the heat conducting element, the electrically isolating layer being in direct contact with the second side of the die, and the electrically isolating layer holding the die relative to the heat conducting element.

2. A radio frequency power amplifier module according to claim 1 , wherein the die further comprises a conductive layer electrically connected to the transistor reference terminal and thermally coupled to the heat conducting element through the electrically isolating layer.

3. A radio frequency power amplifier module according to claim 2 , wherein the conductive layer comprises a patterned metal layer directly adjacent to the electrically isolating layer.

4. A radio frequency power amplifier module according claim 2 wherein the conductive layer comprises:
a blanket metal layer directly adjacent to the electrically isolating layer, and
a metal strip layer arranged at a surface on the first side of the die, the metal strip layer being electrically connected to the blanket metal layer.

5. A radio frequency power amplifier module according to claim 1 , wherein the at least two module reference terminals are electrically isolated from the heat conducting element.

6. A radio frequency power amplifier module according to claim 5 , wherein the heat conducting element is made of an electrically isolating material.

7. A radio frequency power amplifier module according to claim 1 , wherein the heat conducting element is made of electrically conductive material and the at least two module reference terminals are electrically connected to the heat conducting element.

8. A radio frequency power amplifier module according to claim 1 , wherein the module input terminal, the module output terminal and the at least two module reference terminals are electrically coupled to the control terminal, to the transistor output terminal and to the transistor reference terminal via a single input conductive element, a single output conductive element, and at least two reference conductive elements, respectively.

9. A radio frequency power amplifier module according to claim 8 , wherein the single input conductive element is arranged adjacent to and in parallel with one of the at least two reference conductive elements and wherein the single output conductive element is arranged adjacent to and in a parallel with another one of the at least two reference conductive elements.

10. A radio frequency power amplifier module according to claim 1 , wherein the module input terminal, the module output terminal and the at least two module reference terminals are electrically coupled to the control terminal, to the transistor output terminal and to the transistor reference terminal via an input array of parallel arranged input conductive elements, an output array of parallel arranged output conductive elements, and at least two reference arrays of parallel mutually arranged reference conductive elements, respectively.

11. A radio frequency power amplifier module according to claim 1 , wherein the radio frequency power transistor is arranged to operate in a radio frequency range and in a range of output power between 100 to 400 watts.

12. A printed circuit board, PCB, comprising the radio frequency power amplifier module as claimed in claim 1 , and wherein the heat conducting element comprises a heat sink attached to the PCB and wherein the module input terminal, the module output terminal and the at least two module reference terminals are electrically coupled to the heat sink.

13. A radio frequency power amplifier package, comprising:
the radio frequency power amplifier module as claimed in claim 1 ,
wherein the heat conducting element is a flange and the module input terminal, the module output terminal and the at least two module reference terminals are an input lead, an output lead and a reference lead of the radio frequency power amplifier package, respectively;
the package further comprising a window frame protruding from the die facing surface of the flange, the window frame defining respective lateral sides of the package and at least partially enclosing the die, and wherein said leads are situated on said window frame and protrude, in a longitudinal direction parallel to the die facing surface, from at least one of the lateral sides outwards.

14. A base station for mobile communications, comprising: the radio frequency power amplifier module as claimed in claim 1 .

15. A radio frequency power amplifier module comprising:
a die comprising a radio frequency power transistor, the radio frequency power transistor comprising a transistor control terminal, a transistor output terminal and a transistor reference terminal;
a plurality of module terminals at a first side of the die, for electrically connecting the die to an electronic circuit external to the radio frequency power amplifier module, the plurality of module terminals comprising: a module input terminal electrically coupled to the transistor control terminal, a module output terminal electrically coupled to the transistor output terminal and at least two module reference terminals being electrically coupled to the transistor reference terminal, the module input terminal and one of the at least two module reference terminals being located at a first lateral side of the first side of the die, and the module output terminal and another one of the at least two module reference terminals being located at a second lateral side of the first side of the die opposite to the first lateral side; and
an electrically isolating layer and a heat conducting element, both being arranged at a second side of the die opposite to the first side, the heat conducting element having a die-facing surface which is physically separated and electrically isolated from the die by the electrically isolating layer, the die being in thermal contact with the heat conducting element via the electrically isolating layer for transferring heat generated during operation of the power amplifier transistor away from the die to the h

Assignees

• Blednov Igor Ivanovich
• Jones Jeffrey K
• Volokhine Youri
• Freescale Semiconductor Inc

Inventors

• Blednov Igor Ivanovich
• Jones Jeffrey K
• Volokhine Youri

Classifications

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W72/07553

  changes in shapes · CPC title

• H10W72/5445

  being orthogonal to a side surface of the chip, e.g. parallel arrangements · CPC title

• H10W72/944

  Dispositions of multiple bond pads · CPC title