Semiconductor devices having a seal ring
US-2024413245-A1 · Dec 12, 2024 · US
Semiconductor structure and method for manufacturing the same
US9401425B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9401425-B2 |
| Application number | US-201214437755-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 27, 2012 |
| Priority date | Oct 26, 2012 |
| Publication date | Jul 26, 2016 |
| Grant date | Jul 26, 2016 |
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Abstract
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A semiconductor structure is disclosed. The semiconductor structure comprises: a substrate ( 130 ), a support structure ( 131 ), a base region ( 100 ), a gate stack, a spacer ( 240 ), and a source/drain region, wherein the gate stack is located on the base region ( 100 ), and the base region ( 100 ) is supported on the substrate ( 130 ) by the support structure ( 131 ), wherein the sidewall cross-section of the support structure ( 131 ) is in a shape of a concave curve; an isolation structure ( 123 ) is formed beneath the edges on both sides of the base region ( 100 ), wherein a portion of the isolation structure ( 123 ) is connected to the substrate ( 130 ); a cavity ( 112 ) is formed between the isolation structure ( 123 ) and the support structure ( 131 ); and there exists a source/drain region at least on both sides of the base region ( 100 ) and the isolation structure ( 123 ). Accordingly, a method for manufacturing the semiconductor structure is also disclosed.
First claim
Opening claim text (preview).
The invention claimed is: 1. A semiconductor structure, comprising a substrate ( 130 ), a support structure ( 131 ), a base region ( 100 ), a gate stack, a spacer ( 240 ) and a source/drain region, wherein the gate stack is located on the base region ( 100 ), and the base region ( 100 ) is supported on the substrate ( 130 ) by the support structure ( 131 ), wherein: the sidewall cross-section of the support structure ( 131 ) is in a shape of concave curve; an isolation structure…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9401425B2 cover?
- A semiconductor structure is disclosed. The semiconductor structure comprises: a substrate ( 130 ), a support structure ( 131 ), a base region ( 100 ), a gate stack, a spacer ( 240 ), and a source/drain region, wherein the gate stack is located on the base region ( 100 ), and the base region ( 100 ) is supported on the substrate ( 130 ) by the support structure ( 131 ), wherein the sidewall cro…
- Who is the assignee on this patent?
- Inst Of Microelectronics Cas
- What technology area does this patent fall under?
- Primary CPC classification H10D84/0128. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jul 26 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).