Method for manufacturing semiconductor device and plasma oxidation treatment method

Patent metadata

Field	Value
Publication number	US-9401396-B2
Application number	US-201213433563-A
Country	US
Kind code	B2
Filing date	Mar 29, 2012
Priority date	Apr 19, 2011
Publication date	Jul 26, 2016
Grant date	Jul 26, 2016

Abstract

Provided is a method for manufacturing a semiconductor device, in which a degradation of characteristics of a thin film transistor can be suppressed by performing plasma oxidation treatment on a gate insulating film containing nitrogen. An embodiment of the present invention is a method for manufacturing a semiconductor device comprising a thin film transistor including a gate electrode, a gate insulating film containing nitrogen, and a channel region in microcrystalline semiconductor films. The method includes the steps of performing plasma treatment on the gate insulating film in an oxidizing gas atmosphere containing hydrogen and an oxidizing gas containing an oxygen atom, and forming the microcrystalline semiconductor film over the gate insulating film. Formula (1), a/b≧2, and Formula (2), b>0, are satisfied, where the amount of hydrogen and the amount of the oxidizing gas in the oxidizing gas atmosphere are a and b, respectively.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor device comprising a thin film transistor including a gate electrode, a gate insulating film containing nitrogen, and a microcrystalline semiconductor film, the method comprising the steps of:
performing plasma treatment on the microcrystalline semiconductor film in an oxidizing gas atmosphere containing hydrogen and an oxidizing gas;
forming an insulating film over the microcrystalline semiconductor film; and
forming a back gate electrode over the insulating film,
wherein c/d≧2 and d>0 are satisfied, where an amount of the hydrogen and an amount of the oxidizing gas in the oxidizing gas atmosphere are c and d, respectively.

2. The method for manufacturing a semiconductor device according to claim 1 , wherein the oxidizing gas includes at least one of oxygen, NO 2 , and N 2 O.

3. A method for manufacturing a semiconductor device comprising a thin film transistor including a gate electrode, a gate insulating film containing nitrogen, and a microcrystalline semiconductor film, the method comprising the steps of:
forming the microcrystalline semiconductor film over the gate insulating film;
forming an amorphous semiconductor film over the microcrystalline semiconductor film;
performing plasma treatment on the amorphous semiconductor film in an oxidizing gas atmosphere containing hydrogen and an oxidizing gas;
forming an insulating film over the amorphous semiconductor film; and
forming a back gate electrode over the insulating film,
wherein c/d≧2 and d>0 are satisfied, where an amount of the hydrogen and an amount of the oxidizing gas in the oxidizing gas atmosphere are c and d, respectively.

4. The method for manufacturing a semiconductor device according to claim 3 , wherein the oxidizing gas includes at least one of oxygen, NO 2 , and N 2 O.

Assignees

• Abe Kanta
• Miyairi Hidekazu
• Tanaka Tetsuhiro
• Ienaga Takashi
• Yamamoto Yoshitaka
• Semiconductor Energy Lab
• Sharp Kk

Inventors

• Abe Kanta
• Miyairi Hidekazu
• Tanaka Tetsuhiro
• Ienaga Takashi
• Yamamoto Yoshitaka

Classifications

• H10D64/013

  of electrodes having a conductor capacitively coupled to a semiconductor by an insulator · CPC title

• H10D30/6734

  having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs · CPC title

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• H10D30/6745

  Polycrystalline or microcrystalline silicon · CPC title

• H10D30/6732

  Bottom-gate only TFTs · CPC title