Item comprising an organic-inorganic layer with a low refractive index
US-2021405261-A1 · Dec 30, 2021 · US
Multi-source plasma focused ion beam system
US9401262B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9401262-B2 |
| Application number | US-201514710205-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 12, 2015 |
| Priority date | Jul 14, 2006 |
| Publication date | Jul 26, 2016 |
| Grant date | Jul 26, 2016 |
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Abstract
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The present invention provides a plasma ion beam system that includes multiple gas sources and that can be used for performing multiple operations using different ion species to create or alter submicron features of a work piece. The system preferably uses an inductively coupled, magnetically enhanced ion beam source, suitable in conjunction with probe-forming optics sources to produce ion beams of a wide variety of ions without substantial kinetic energy oscillations induced by the source, thereby permitting formation of a high resolution beam.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of charged particle beam processing, comprising: providing an ion beam system having a first gas supply and a second gas supply, the first and second gas supplies being selectively connected to a plasma chamber of an ion source for producing ions of a first type or ions of a second type, respectively, the ion beam system including focusing optics for forming a beam of ions extracted from the plasma chamber; selectively causing a gas from the first…
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- C23C14/0031Primary
Chemistry & Metallurgy · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9401262B2 cover?
- The present invention provides a plasma ion beam system that includes multiple gas sources and that can be used for performing multiple operations using different ion species to create or alter submicron features of a work piece. The system preferably uses an inductively coupled, magnetically enhanced ion beam source, suitable in conjunction with probe-forming optics sources to produce ion beam…
- Who is the assignee on this patent?
- Fei Co
- What technology area does this patent fall under?
- Primary CPC classification C23C14/0031. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jul 26 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).