Negative electrode for power storage device and power storage device

Patent metadata

Field	Value
Publication number	US-9401247-B2
Application number	US-201213613874-A
Country	US
Kind code	B2
Filing date	Sep 13, 2012
Priority date	Sep 21, 2011
Publication date	Jul 26, 2016
Grant date	Jul 26, 2016

Abstract

Provided is a negative electrode for a power storage device in which charge/discharge capacity is high and deterioration in battery characteristics due to charge/discharge is small. The negative electrode for a power storage device includes a negative electrode active material having a plurality of protrusions and a bar which serves as a connecting bridge over a first protrusion and a second protrusion among the plurality of protrusions. The bar is provided in a direction perpendicular to a direction in which a current collector is bent. An axis of the first protrusion and an axis of the second protrusion are oriented in the same direction. Further, a graphene covering a side surface of the protrusion or covering the side surface of the protrusion and a top surface of the bar may be provided.

First claim

What is claimed is:

1. A negative electrode for a power storage device comprising:
a current collector;
a negative electrode active material structure over the current collector, the negative electrode active material structure comprising at least a first protrusion, a second protrusion, a third protrusion, and a fourth protrusion;
a first bar over the first protrusion and the second protrusion; and
a second bar over the third protrusion and the fourth protrusion,
wherein the current collector comprises one selected from the group consisting of titanium, aluminum, and copper,
wherein each of the first protrusion, the second protrusion, the third protrusion, and the fourth protrusion comprises an active material,
wherein each of the first bar and the second bar comprises a conductive material, and
wherein the conductive material comprises one selected from the group consisting of titanium, aluminum, and copper.

2. The negative electrode for a power storage device according to claim 1 , wherein the negative electrode active material structure further comprises a common portion provided with the first protrusion and the second protrusion.

3. The negative electrode for a power storage device according to claim 2 , wherein the first bar is oriented in a direction perpendicular to a direction in which the common portion is bent.

4. The negative electrode for a power storage device according to claim 1 , wherein the current collector is in contact with the first protrusion and the second protrusion.

5. The negative electrode for a power storage device according to claim 4 , wherein the first bar is oriented in a direction perpendicular to a direction in which the current collector is bent.

6. The negative electrode for a power storage device according to claim 1 ,
wherein a plane orientation of the first protrusion and a plane orientation of the second protrusion are oriented in the same direction, or a crystal orientation of the first protrusion and a crystal orientation of the second protrusion are oriented in the same direction.

7. The negative electrode for a power storage device according to claim 1 , wherein the first protrusion and the second protrusion include silicon.

8. A power storage device including the negative electrode according to claim 1 .

9. A negative electrode for a power storage device comprising:
a current collector;
a negative electrode active material structure over the current collector, the negative electrode active material structure comprising at least a first protrusion, a second protrusion, a third protrusion, and a fourth protrusion;
a first bar over the first protrusion and the second protrusion;
a second bar over the third protrusion and the fourth protrusion; and
a graphene covering at least side surfaces of the first protrusion and the second protrusion,
wherein the current collector comprises one selected from the group consisting of titanium, aluminum, and copper,
wherein each of the first protrusion, the second protrusion, the third protrusion, and the fourth protrusion comprises an active material,
wherein each of the first bar and the second bar comprises a conductive material, and
wherein the conductive material comprises one selected from the group consisting of titanium, aluminum, and copper.

10. The negative electrode for a power storage device according to claim 9 , wherein a plane orientation of the first protrusion and a plane orientation of the second protrusion are oriented in the same direction, or a crystal orientation of the first protrusion and a crystal orientation of the second protrusion are oriented in the same direction.

11. The negative electrode for a power storage device according to claim 9 , wherein the first protrusion and the second protrusion include silicon.

12. A power storage device including the negative electrode according to claim 9 .

13. The negative electrode for a power storage device according to claim 9 , wherein the graphene covers top surfaces of the first protrusion and the second protrusion.

14. A negative electrode for a power storage device comprising:
a current collector;
a negative electrode active material structure over the current collector, the negative electrode active material structure comprising at least a first protrusion, a second protrusion, a third protrusion, and a fourth protrusion;
a first bar over the first protrusion and the second protrusion;
a second bar over the third protrusion and the fourth protrusion; and
a graphene covering side surfaces of the first protrusion and the second protrusion and a top surface of the first bar,
wherein the current collector comprises one selected from the group consisting of titanium, aluminum, and copper,
wherein each of the first protrusion, the second protrusion, the third protrusion, and the fourth protrusion comprises an active material,
wherein each of the first bar and the second bar comprises a conductive material, and
wherein the conductive material comprises one selected from the group consisting of titanium, aluminum, and copper.

15. The negative electrode for a power storage device according to claim 14 , wherein a plane orientation of the first protrusion and a plane orientation of the second protrusion are oriented in the same direction, or a crystal orientation of the first protrusion and a crystal orientation of the second protrusion are oriented in the same direction.

16. The negative electrode for a power storage device according to claim 14 , wherein the first protrusion and the second protrusion include silicon.

17. A power storage device including the negative electrode according to claim 14 .

18. The negative electrode for a power storage device according to claim 1 ,
wherein the first bar serves as a connecting bridge over the first protrusion and the second protrusion, and
wherein the second bar serves as a connecting bridge over the third protrusion and the fourth protrusion.

19. The negative electrode for a power storage device according to claim 9 ,
wherein the first bar serves as a connecting bridge over the first protrusion and the second protrusion, and
wherein the second bar serves as a connecting bridge over the third protrusion and the fourth protrusion.

20. The negative electrode for a power storage device according to claim 14 ,
wherein the first bar serves as a connecting bridge over the first protrusion and the second protrusion, and
wherein the second bar serves as a connecting bridge over the third protrusion and the fourth protrusion.

21. The negative electrode for a power storage device according to claim 1 , wherein the first bar is arranged in parallel with the second bar.

Assignees

• Tajima Ryota
• Yamazaki Shunpei
• Suzawa Hideomi
• Osada Takeshi
• Semiconductor Energy Lab

Inventors

• Tajima Ryota
• Yamazaki Shunpei
• Suzawa Hideomi
• Osada Takeshi

Classifications

• H01M4/134

  Electrodes based on metals, Si or alloys · CPC title

• H01G11/66

  Current collectors · CPC title

• H01G11/30 Primary

  characterised by their material · CPC title

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

• H01M4/386

  Silicon or alloys based on silicon · CPC title