Liquid compositions and methods of fabricating a semiconductor device using the same

Patent metadata

Field	Value
Publication number	US-9399822-B2
Application number	US-201414312782-A
Country	US
Kind code	B2
Filing date	Jun 24, 2014
Priority date	Sep 17, 2013
Publication date	Jul 26, 2016
Grant date	Jul 26, 2016

Abstract

The present inventive concepts provide a liquid composition for etching a metal containing copper. The liquid composition may include hydrogen peroxide in a range of about 0.1 wt % to about 10 wt % and a buffer solution in a range of about 0.1 wt % to about 10 wt %. The buffer solution may include citrate. The liquid composition may have a pH in a range of about 4.0 to about 7.0.

First claim

What is claimed is:

1. A liquid composition for etching a metal containing copper, the liquid composition consisting of:
hydrogen peroxide in a range of about 0.1 wt % to about 10 wt %;
a buffer solution in a range of about 0.1 wt % to about 10 wt %, the buffer solution including citrate;
an organic acid in a range of about 0.1 wt % to about 10 wt %; and
water,
wherein the liquid composition has a pH in a range of about 4.0 to about 7.0.

2. The liquid composition of claim 1 , wherein the buffer solution includes ammonium citrate.

3. The liquid composition of claim 1 , wherein the buffer solution includes potassium citrate.

4. The liquid composition of claim 1 , wherein the organic acid includes citric acid.

5. The liquid composition of claim 1 , wherein the water is deionized water in a range of about 1 wt % to about 99.7 wt %.

6. The composition of claim 1 , wherein
the hydrogen peroxide is in a range of about 1.5 wt % to about 5 wt %;
the buffer solution is in a range of about 2 wt % to about 9 wt %; and
the organic acid is in a range of about 0.1 wt % to about 5.5 wt %.

7. A method of fabricating a semiconductor device, the method comprising:
providing a liquid composition on a substrate comprising a first metal layer and a second metal layer, the second metal layer including copper, to remove a portion of the second metal layer, thereby forming a second metal pattern;
cleaning the substrate using deionized water;
drying the substrate using an inert gas; and
selectively removing the first metal layer exposed by the second metal pattern to form a first metal pattern, wherein the liquid composition comprises: hydrogen peroxide in a range of about 0.1 wt % to about 10 wt %; and a buffer solution in a range of about 0.1 wt % to about 10 wt %, the buffer solution including citrate, wherein the liquid composition has a pH in a range of about 4.0 to about 7.0.

8. The method of claim 7 , wherein the second metal pattern has a sidewall substantially perpendicular to a top surface of the first metal layer.

9. The method of claim 7 , wherein the buffer solution includes ammonium citrate.

10. The method of claim 7 , wherein the liquid composition further comprises an organic acid in a range of about 0.1 wt % to about 10 wt %.

11. The method of claim 10 , wherein the buffer solution includes potassium citrate.

12. The method of claim 7 , wherein the liquid composition further comprises deionized water in a range of about 1 wt % to about 99.7 wt %.

13. The method of claim 7 , wherein providing the liquid composition on the substrate comprises:
immersing or rotating the substrate in the liquid composition at a temperature in a range of about 20° C. to about 80° C.

14. The method of claim 7 , further comprising
forming a photoresist pattern having an opening exposing a portion of the second metal layer, the opening corresponding to a metal pad formed on a top surface of the substrate;
sequentially forming a metal pillar and a bump electrode in the opening; and
removing the photoresist pattern, thereby forming an etching mask layer.

15. A composition for etching a metal containing copper, the composition consisting essentially of:
hydrogen peroxide in a range of about 0.1 wt % to about 10 wt %,
a buffer solution in a range of about 0.1 wt % to about 10 wt %, the buffer solution including ammonium citrate;
an organic acid in a range of about 0.1 wt % to less than 3 wt %; and
water,
wherein the composition has a pH in a range of about 4.0 to about 7.0.

16. The composition of claim 15 , wherein the organic acid includes citric acid.

17. The composition of claim 16 , wherein the citric acid is in a range of about 0.8 wt % to about 1.2 wt %.

18. The composition of claim 15 , wherein the water is deionized water in a range of about 1 wt % to about 99.7 wt %.

Assignees

• Samsung Electronics Co Ltd
• Samyoung Pure Chemicals Co Ltd
• Mitsubishi Gas Chemical Co

Inventors

• Kang Dong-Min
• Jeon Hyungjun
• Kang Ingoo
• Kwon Jeong
• Jeon Jung-Ig
• Choi Jungsik
• Hong Young Taek
• Hosomi Akira
• Suzuki Tomoko

Classifications

• H10W72/29

  Bond pads specially adapted therefor · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/9415

  relative to the surface, e.g. recessed, protruding · CPC title

• H10W72/9226

  with via interconnections · CPC title

• H10W72/923

  Bond pads having multiple stacked layers · CPC title