Methods of preventing plasma induced damage during substrate processing

Patent metadata

Field	Value
Publication number	US-9399812-B2
Application number	US-201113270276-A
Country	US
Kind code	B2
Filing date	Oct 11, 2011
Priority date	Oct 11, 2011
Publication date	Jul 26, 2016
Grant date	Jul 26, 2016

Abstract

Methods for processing substrates are provided herein. In some embodiments, a method of processing a substrate within a process chamber having an electrostatic chuck to support a substrate in a processing region of the process chamber and a target disposed opposite the electrostatic chuck, wherein the target comprises a target material to be deposited on the substrate, may include disposing a substrate on the electrostatic chuck; providing a process gas to the processing region; igniting a plasma in the processing region from the process gas while the substrate is disposed on the electrostatic chuck with no chucking voltage provided to clamp the substrate to the electrostatic chuck; and depositing target material on the substrate to form a first barrier layer while no chucking voltage is provided, wherein the target material is sputtered from the target via the plasma.

First claim

What is claimed is:

1. A method of processing a substrate within a process chamber having an electrostatic chuck to support a substrate in a processing region of the process chamber and a target disposed opposite the electrostatic chuck, wherein the target comprises a target material to be deposited on the substrate, the method comprising:
disposing a substrate on the electrostatic chuck;
providing a process gas to the processing region;
igniting a plasma in the processing region from the process gas while the substrate is disposed on the electrostatic chuck with no chucking voltage provided to clamp the substrate to the electrostatic chuck;
increasing a DC power applied to the target from a plasma ignition power to a deposition power of about 10 to about 120 kW at a rate of about 2 to about 6 kW/s;
depositing target material on the substrate to form a first barrier layer while no chucking voltage is provided, wherein the target material is sputtered from the target via the plasma; and
pulsing only a DC chucking voltage to the electrostatic chuck to draw sputtered target material to a bottom and sidewalls of a feature to form a second barrier layer, wherein the first barrier layer and the second barrier layer comprise the same materials.

2. The method of claim 1 , further comprising depositing target material on the substrate to form a second barrier layer while pulsing a backside gas to the substrate to control substrate temperature levels wherein the target material is sputtered from the target via the plasma.

3. The method of claim 1 , wherein the target material comprises at least one of titanium (Ti), tantalum (Ta), tungsten (W), or aluminum (Al).

4. The method of claim 2 , wherein the backside gas comprises argon (Ar).

5. The method of claim 1 , wherein igniting a plasma in the process region further comprises:
applying the plasma ignition power of about 0.2 to about 5 kW to the target.

6. The method of claim 1 , wherein depositing target material on the substrate further comprises:
maintaining a pressure in the process chamber after plasma ignition for a period of time of about 3 to about 10 seconds prior to reducing the pressure in the process chamber.

7. The method of claim 6 , wherein reducing the pressure in the process chamber further comprises:
reducing the pressure to a pressure of about 2 to about 5 mTorr.

8. The method of claim 2 , wherein pulsing a chucking voltage to the electrostatic chuck further comprises pulsing a DC voltage from a positive voltage to a negative voltage.

9. The method of claim 8 , wherein pulsing the DC voltage comprises:
providing the DC voltage at the positive voltage for a first period of time of about 10 microseconds to about 10 milliseconds; and
providing the DC voltage at the negative voltage for a second period of time of about 10 microseconds to about 10 milliseconds.

10. The method of claim 8 , wherein the pulsed DC voltage is pulsed at a frequency of about 100 Hz to about 100 kHz.

11. A method of processing a substrate within a process chamber having an electrostatic chuck to support a substrate in a processing region of the process chamber and a target disposed opposite the electrostatic chuck, wherein the target comprises a target material to be deposited on the substrate, the method comprising:
disposing a substrate on the electrostatic chuck;
providing a process gas to the processing region;
igniting a plasma in the processing region from the process gas while the substrate is disposed on the electrostatic chuck with no chucking voltage provided to clamp the substrate to the electrostatic chuck;
depositing a first layer of target material on the substrate while no chucking voltage is provided and while increasing a DC power applied to the target from a plasma ignition power to a deposition power of about 10 to about 120 kW at a rate of about 2 to about 6 kW/s, wherein the target material is sputtered from the target via the plasma; and
applying only a DC chucking voltage to the electrostatic chuck to draw sputtered target material to a bottom and sidewalls of a feature to form a second layer of target material while applying a backside gas to the substrate to control a temperature of the substrate, wherein the target material is sputtered from the target via the plasma, and wherein the deposited first layer of target material and the deposited second layer of target material are the same materials.

12. The method of claim 11 , wherein the target material comprises at least one of titanium (Ti), tantalum (Ta), tungsten (W), or aluminum (Al).

13. The method of claim 11 , wherein the backside gas comprises argon (Ar).

14. A method of processing a substrate within a process chamber having an electrostatic chuck to support a substrate in a processing region of the process chamber and a target disposed opposite the electrostatic chuck, wherein the target comprises a target material to be deposited on the substrate, the method comprising:
disposing a substrate on the electrostatic chuck;
providing a process gas to the processing region;
igniting a plasma in the processing region from the process gas while the substrate is disposed on the electrostatic chuck with no chucking voltage provided to clamp the substrate to the electrostatic chuck;
depositing a first layer of target material on the substrate while no chucking voltage is provided, wherein the target material is sputtered from the target via the plasma; and
applying only a DC chucking voltage to the electrostatic chuck to draw sputtered target material to a bottom and sidewalls of a feature to form a second layer of target materials while pulsing a backside gas to the substrate to control substrate temperature levels wherein the target material is sputtered from the target via the plasma, and wherein the first layer of target material and the second layer of target material are the same materials.

15. The method of claim 14 , wherein the target material comprises at least one of titanium (Ti), tantalum (Ta), tungsten (W), or aluminum (Al).

16. The method of claim 14 , wherein the process gas comprises argon (Ar).

Assignees

• Xie Zhigang
• Chang Mei
• Applied Materials Inc

Inventors

• Bodke Ashish Subhash
• Xie Zhigang
• Chang Mei

Classifications

• H10P72/72

  using electrostatic chucks · CPC title

• C23C14/3492

  Variation of parameters during sputtering · CPC title

• C23C14/165

  by cathodic sputtering · CPC title

• C23C14/0641

  Nitrides (C23C14/0617 takes precedence) · CPC title

• C23C14/046 Primary

  Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates · CPC title