Semiconductor device
US-2024363707-A1 · Oct 31, 2024 · US
Etching solution
US9399734B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9399734-B2 |
| Application number | US-59542408-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 8, 2008 |
| Priority date | Apr 13, 2007 |
| Publication date | Jul 26, 2016 |
| Grant date | Jul 26, 2016 |
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Abstract
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An etching solution, a process of producing the same, and an etching process using the same, in which the etching solution includes hydrofluoric acid (a), ammonium fluoride (b), and salt (c) formed between hydrogen fluoride and a base having a boiling point higher than that of ammonia; the concentration of ammonium fluoride (b) is not higher than 8.2 mol/kg, and the total amount of ammonium fluoride (b) and salt (c) formed between hydrogen fluoride and a base having a boiling point higher than that of ammonia is not less than 9.5 mol/kg.
First claim
Opening claim text (preview).
The invention claimed is: 1. An etching process for a silicon oxide film comprising etching a silicon oxide film to be etched using an etching solution comprising: hydrofluoric acid (a); 0 to 8.2 mol/kg of ammonium fluoride (b); and a salt (c) formed between hydrogen fluoride and a base having a boiling point higher than that of ammonia, wherein the amount of hydrofluoric acid (a) is from 0.0005 mol/kg to not more than 0.5 mol/kg, and the total amount of ammonium fluoride (b), and the salt (c) formed between hydrogen fluoride and a base having a boiling point higher than that of ammonia is not less than 9.5 mol/kg, and wherein the base having a boiling point higher than that of ammonia is at least one member selected from the group consisting of a primary amine, a secondary amine, a tertiary amine, and a quaternary ammonium compound, and wherein the primary amine is at least one member selected from the group consisting of methylamine, ethylamine, propylamine, butylamine, pentylamine, hydroxylamine, ethanolamine, propanolamine, butanolamine, methoxyethylamine and methoxypropylamine; and the secondary amine is at least one member selected from the group consisting of dimethylamine, diethylamine, dipropylamine and diethanolamine. 2. The etching process according to claim 1 , wherein the base has a boiling point of not less than −30° C. 3. The etching process according to claim 1 , wherein the tertiary amine is at least one member selected from the group consisting of trimethylamine, triethylamine, and triethanolamine. 4. The etching process according to claim 1 , wherein the base having a boiling point higher than that of ammonia is at least one member selected from the group consisting of methylamine, ethylamine, and ethanolamine. 5. The etching process according to claim 1 , wherein the etching solution further comprises a surfactant. 6. A method for producing an etched silicon oxide film, the method comprising etching a silicon oxide film to be etched using the etching process as defined in claim 1 .
Assignees
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Classifications
involving a dielectric removal step · CPC title
- H10P70/234Primary
the processing being the formation of vias or contact holes · CPC title
by wet cleaning only (H10P70/52 takes precedence) · CPC title
by liquid etching only · CPC title
Chemical etching · CPC title
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Frequently asked questions
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- What does patent US9399734B2 cover?
- An etching solution, a process of producing the same, and an etching process using the same, in which the etching solution includes hydrofluoric acid (a), ammonium fluoride (b), and salt (c) formed between hydrogen fluoride and a base having a boiling point higher than that of ammonia; the concentration of ammonium fluoride (b) is not higher than 8.2 mol/kg, and the total amount of ammonium flu…
- Who is the assignee on this patent?
- Itano Mitsushi, Nakamura Shingo, Kezuka Takehiko, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H10P70/234. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jul 26 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).