Apparatus and method for generating pulse laser
US-2015372447-A1 · Dec 24, 2015 · US
Method for manufacturing semiconductor device and semiconductor device
US9397474B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9397474-B2 |
| Application number | US-201414497393-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 26, 2014 |
| Priority date | Jan 10, 2014 |
| Publication date | Jul 19, 2016 |
| Grant date | Jul 19, 2016 |
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Abstract
Official abstract text for this publication.
A method for manufacturing a semiconductor device includes forming a lower light confinement layer on a substrate, a light absorption layer on the lower light confinement layer, and an upper light confinement layer on the light absorption layer; and removing parts of these layers to form an optical modulator, forming a laser section having a diffraction grating in a portion of the substrate where the optical modulator is not present, forming a diffusion constraining layer, which constrains diffusion of a dopant, on the upper light confinement layer, and forming a contact layer on the laser section and the diffusion constraining layer. The same dopant is present in the contact layer and the upper light confinement layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for manufacturing a semiconductor device, comprising: forming a lower light confinement layer on a substrate, an undoped light absorption layer on the lower light confinement layer, and an upper light confinement layer on the undoped light absorption layer, wherein the upper light confinement layer includes one of Be and Zn as a dopant; removing parts of the lower light confinement layer, the undoped light absorption layer, and the upper light con…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01S5/0265Primary
Electricity · mapped topic
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- What does patent US9397474B2 cover?
- A method for manufacturing a semiconductor device includes forming a lower light confinement layer on a substrate, a light absorption layer on the lower light confinement layer, and an upper light confinement layer on the light absorption layer; and removing parts of these layers to form an optical modulator, forming a laser section having a diffraction grating in a portion of the substrate whe…
- Who is the assignee on this patent?
- Mitsubishi Electric Corp
- What technology area does this patent fall under?
- Primary CPC classification H01S5/0265. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jul 19 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).