Thin film transistor

Patent metadata

Field	Value
Publication number	US-9397305-B2
Application number	US-201615011642-A
Country	US
Kind code	B2
Filing date	Jan 31, 2016
Priority date	Apr 16, 2013
Publication date	Jul 19, 2016
Grant date	Jul 19, 2016

Abstract

A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconductor layer, an insulating layer and a gate electrode. The drain electrode is spaced from the source electrode. The semiconductor layer is electrically connected to the source electrode and the drain electrode. The gate electrode is insulated with the source electrode, the drain electrode and the semiconductor layer by the insulating layer. The gate electrode, the source electrode, and the drain electrode comprise a plurality of first carbon nanotubes. The semiconductor layer comprises a plurality of second carbon nanotubes. A distribution density of the plurality of first carbon nanotubes is about 20 times as much as that of the plurality of second carbon nanotubes. A number of the plurality of second carbon nanotubes in 1 square micrometers is smaller than or equal to 1.

First claim

What is claimed is:

1. A thin film transistor comprising:
a source electrode;
a drain electrode spaced from the source electrode;
a semiconductor layer electrically connected to the source electrode and the drain electrode;
an insulating layer; and
a gate electrode insulated from the source electrode, the drain electrode and the semiconductor layer by the insulating layer;
wherein each of the gate electrode, the source electrode, and the drain electrode comprises a plurality of first carbon nanotubes; and the semiconductor layer comprises a plurality of second carbon nanotubes, a distribution density of the plurality of first carbon nanotubes is about 20 times as much as that of the plurality of second carbon nanotubes, and number of the plurality of second carbon nanotubes in 1 square micrometers is smaller than or equal to 1.

2. The thin film transistor of claim 1 , wherein the semiconductor layer is located between the drain electrode and the source electrode.

3. The thin film transistor of claim 1 , wherein the semiconductor layer comprises a middle part, a first connecting part, and a second connecting part; and the middle part is located between the first connecting part and the second connecting part and defined as a channel.

4. The thin film transistor of claim 3 , wherein the first connecting part is overlapped with the source electrode, and the second connecting part is overlapped with the drain electrode.

5. The thin film transistor of claim 3 , wherein the first connecting part is located on and in contact with a source electrode surface away from the insulating layer, and the second connecting part is located on and in contact with a drain electrode surface away from the insulating layer.

6. The thin film transistor of claim 3 , wherein the first connecting part is in contact with the source electrode, the second connecting part is in contact with the drain electrode.

7. The thin film transistor of claim 3 , wherein a first width of the first connecting part and the second connecting part is greater than a second width of the middle part.

8. The thin film transistor of claim 3 , wherein a length of the middle part is greater than 5 micrometers, a width of the middle part is greater than or equal to 5 micrometers, and a ratio of the length and the width is greater than 1.

9. The thin film transistor of claim 8 , wherein the semiconductor layer extends onto the source electrode and the drain electrode.

10. The thin film transistor of claim 1 , wherein the plurality of first carbon nanotubes are joined by van der Waals attractive force and disorderly arranged.

11. The thin film transistor of claim 10 , wherein the plurality of first carbon nanotubes define a plurality of apertures, and a diameter of each of the plurality of apertures is smaller than 50 micrometers.

12. The thin film transistor of claim 10 , wherein a number of the plurality of first carbon nanotubes in 1 square micrometers is equal to or greater than 20.

13. The thin film transistor of claim 1 , wherein the plurality of second carbon nanotubes are joined by van der Waals attractive force and disorderly arranged.

14. The thin film transistor of claim 1 , wherein a diameter of each of the plurality of first carbon nanotubes is smaller than 10 nanometers, a diameter of each of the plurality of second carbon nanotubes is smaller than about 5 nanometers.

15. The thin film transistor of claim 1 , wherein the semiconductor layer, the source electrode and the drain electrode are located on the same surface.

16. The thin film transistor of claim 1 , wherein the semiconductor layer only comprises a middle part with two ends in contact with and electrically connected to the source electrode and the drain electrode.

Assignees

• Univ Tsinghua
• Hon Hai Prec Ind Co Ltd

Inventors

• Zou Yuan
• Li Qun-Qing
• Fan Shou-Shan

Classifications

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• Y10S977/742

  Carbon nanotubes, CNTs · CPC title

• Y10S977/842

  for carbon nanotubes or fullerenes · CPC title

• Y10S977/938

  Field effect transistors, FETS, with nanowire- or nanotube-channel region · CPC title

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title