Mram device with octagon profile
US-2024135978-A1 · Apr 25, 2024 · US
Magnetic memory devices having perpendicular magnetic tunnel structures therein
US9397286B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9397286-B2 |
| Application number | US-201414473334-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 29, 2014 |
| Priority date | Nov 18, 2013 |
| Publication date | Jul 19, 2016 |
| Grant date | Jul 19, 2016 |
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Abstract
Official abstract text for this publication.
Magnetic memory cells include a magnetic tunnel junction and a first electrode, which is electrically coupled to the magnetic tunnel junction by a first conductive structure. This conductive structure includes a blocking layer and a seed layer, which extends between the blocking layer and the magnetic tunnel junction. The blocking layer is formed as an amorphous metal compound. In some of the embodiments, the blocking layer is a thermally treated layer and an amorphous state of the blocking layer is maintained during and post thermal treatment.
First claim
Opening claim text (preview).
What is claimed is: 1. A magnetic memory device, comprising: first and second perpendicular magnetic structures having a tunnel barrier layer therebetween; an electrode separated from the tunnel barrier layer by the first perpendicular magnetic structure; and a blocking layer extending between the first perpendicular magnetic structure and the electrode, said blocking layer comprising an amorphous metal compound. 2. The memory device of claim 1 , wherein…
Assignees
Inventors
Classifications
- H01L43/08Primary
Electricity · mapped topic
Electricity · mapped topic
- G11C11/161Primary
Physics · mapped topic
- G11C11/15Primary
Physics · mapped topic
- H10N50/80Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9397286B2 cover?
- Magnetic memory cells include a magnetic tunnel junction and a first electrode, which is electrically coupled to the magnetic tunnel junction by a first conductive structure. This conductive structure includes a blocking layer and a seed layer, which extends between the blocking layer and the magnetic tunnel junction. The blocking layer is formed as an amorphous metal compound. In some of the e…
- Who is the assignee on this patent?
- Kim Sangyong, Kim Whankyun, Oh Sechung, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H01L43/08. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jul 19 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).