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Junctionless nano-electro-mechanical resonant transistor
US9397285B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9397285-B2 |
| Application number | US-201314395626-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 19, 2013 |
| Priority date | Apr 19, 2012 |
| Publication date | Jul 19, 2016 |
| Grant date | Jul 19, 2016 |
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Abstract
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A junctionless Nano-Electro-Mechanical (NEM) resonator, comprising a highly doped conductive channel connecting a drain region and a source region; the conduction channel region is movable and the overall structure is fixed at least at these two ends placed on acting the source and drain regions, respectively; at least one fixed gate electrode arranged to control a depletion charge in the highly doped conductive channel thereby modulating dimensions of a cross-section of the highly doped conductive channel. A dimension of the cross-section in the direction of an electrical field that is oriented from the fixed gate electrode to the highly doped conductive channel, is designed in such a way that it can be reduced under the effect of the depletion charge such that a full depletion in the highly doped conductive channel is achievable with the control of the fixed gate electrode.
First claim
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The invention claimed is: 1. A junctionless Nano-Electro-Mechanical (NEM) resonant transistor, comprising: a highly doped conductive channel with a doping concentration equal or higher than 2×10 18 donors or acceptors atoms/cm 3 , forming a device channel that is placed between two other highly doped regions of same type of either donors or acceptors, the two other highly doped regions being called respectively a drain region and a source region, thereby forming a junctionless n+…
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Electricity · mapped topic
Operations & Transport · mapped topic
Operations & Transport · mapped topic
Operations & Transport · mapped topic
Electricity · mapped topic
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- What does patent US9397285B2 cover?
- A junctionless Nano-Electro-Mechanical (NEM) resonator, comprising a highly doped conductive channel connecting a drain region and a source region; the conduction channel region is movable and the overall structure is fixed at least at these two ends placed on acting the source and drain regions, respectively; at least one fixed gate electrode arranged to control a depletion charge in the highl…
- Who is the assignee on this patent?
- Ecole Polytech
- What technology area does this patent fall under?
- Primary CPC classification H01L41/0966. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jul 19 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).