Light emitting diode chip having electrode pad

Patent metadata

Field	Value
Publication number	US-9397264-B2
Application number	US-201514630273-A
Country	US
Kind code	B2
Filing date	Feb 24, 2015
Priority date	Nov 18, 2010
Publication date	Jul 19, 2016
Grant date	Jul 19, 2016

Abstract

Disclosed herein in an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad located on the second conductive type semiconductor layer opposite to the second conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

First claim

The invention claimed is:

1. A light emitting diode (LED) comprising:
a substrate having a first edge, a second edge opposite to the first edge, a third edge connecting the first edge to the second edge, and a fourth edge opposite to the third edge;
a semiconductor stack disposed over a first surface of the substrate, the semiconductor stack comprising:
a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;

a first electrode pad electrically connected to the first conductivity-type semiconductor layer and disposed over the second conductivity-type semiconductor layer and on at least a portion of the first edge of the substrate;
a first electrode extension extending from the first electrode pad along at least a portion of the first edge and at least a portion of the third edge, the first electrode extension electrically connected to the first conductivity-type semiconductor layer;
a second electrode pad electrically connected to the second conductivity-type semiconductor layer, wherein the second electrode pad is disposed over the second conductively-type semiconductor layer and on at least a portion of the second edge of the substrate;
a first insulation layer interposed between the first electrode pad and the second conductivity-type semiconductor layer;
a second insulation functional layer interposed between the second electrode pad and the second conductivity type semiconductor layer; and
a transparent conductive layer disposed over the second conductivity-type semiconductor layer and between the second electrode extension and the second conductivity type semiconductor layer, wherein the transparent conductive layer is separated from the first insulation layer.

2. The LED of claim 1 , wherein the first insulation layer comprises opening regions to expose the first conductivity-type semiconductor layer.

3. The LED of claim 2 , wherein the first electrode extension is in ohmic contact with the first conductivity-type semiconductor layer through the opening regions.

4. The LED of claim 1 , wherein the transparent conductive layer is configured to cover a side surface of second insulation layer.

5. The LED of claim 1 , further comprising:
a lower reflector disposed on a second surface of the substrate and opposite to the first surface of the substrate,
wherein the lower reflector includes alternately stacked insulation materials having different indices of refraction.

6. The LED of claim 1 , wherein the first insulation layer and the second insulation layer include a reflective material.

7. The LED of claim 1 , wherein the first edge, second edge, third edge and fourth edge define structural boundaries of the substrate.

8. The LED of claim 1 , wherein the transparent layer includes indium tin oxide (ITO).

9. The LED of claim 1 , wherein the substrate includes sapphire.

10. The LED of claim 1 , wherein:
the first conductivity-type semiconductor layer includes a p-type nitride semiconductor layer; and
the second conductivity-type semiconductor layer includes an n-type nitride semiconductor layer.

11. The LED of claim 1 , wherein the transparent conductive layer is disposed over the second conductivity-type semiconductor layer to include through-holes that expose a portion of the second conductivity-type semiconductor layer.

12. The LED of claim 1 , wherein the second insulating layer is interposed between the second electrode extension and the second conductive type semiconductor layer.

13. The LED of claim 1 , wherein:
the second insulating layer is patterned between the transparent conductive layer and the second electrode extension to provide an electrical connection between the second electrode extension and the second conductive type semiconductor layer.

14. The LED of claim 1 wherein:
the second conductivity-type semiconductor layer includes through-holes under at least a portion of the first electrode extension to provide an electrical connection to the first conductive type semiconductor layer.

15. The LED of claim 1 , wherein the second electrode extension is disposed to extend from the second electrode pad along at least a portion of the fourth edge.

16. The LED of claim 1 , wherein:
the first electrode extension is disposed to extend from the first electrode pad towards the second edge; and
the second electrode extension is disposed to extend from the second electrode pad towards the first edge.

17. A light emitting diode (LED) comprising:
a substrate;
a semiconductor stack disposed over a surface of the substrate, the semiconductor stack including:
a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer,
wherein the semiconductor stack is disposed to include a plurality of through-holes extending through the second conductivity-type semiconductor layer to expose a portion of the first conductivity-type semiconductor layer;

a first electrode pad disposed over the second conductivity-type semiconductor layer and electrically connected to the first conductivity-type semiconductor layer through at least one of the through-holes of the semiconductor stack;
a second electrode pad disposed over and electrically connected to the second conductively-type semiconductor layer, wherein the second electrode pad and the first electrode pad are disposed on opposing regions on the surface of the substrate;
a first electrode extension extending from the first electrode pad towards the second electrode pad, wherein the first electrode extension is electrically connected to the first conductivity-type semiconductor layer through at least some of the through-holes of the semiconductor stack; and
a second electrode extension extending from the second electrode pad towards the first electrode pad.

18. The LED of claim 17 , comprising:
a first insulation layer interposed between the first electrode pad and the second conductivity-type semiconductor layer;
a second insulation layer interposed between the second electrode pad and the second conductivity type semiconductor layer; and
a transparent conductive layer disposed over the second conductivity-type semiconductor layer, wherein the transparent conductive layer is separated from the first insulation layer.

19. The LED of claim 18 , wherein the transparent conductivity layer is disposed between the second electrode pad and the second insulation layer.

20. The LED of claim 17 , further comprising:
a lower reflector disposed under the substrate, wherein the lower reflector includes alternately stacked insulation materials having different indices of refraction.

21. The LED of claim 17 , wherein the first electrode extension includes a plurality of portions extending from the first electrode pad.

22. The LED of claim 17 , wherein the second electrode extension includes a plurality of portions extending from the second electrode pad.

23. The LED of claim 17 , wherein:
the first conductivity-type semiconductor layer includes a p-type nitride semiconductor layer; and
the second conductivity-type semiconductor layer includes an n-type nitride semiconductor layer.

24. A light emitting diode (LED) comprisin

Assignees

• Seoul Viosys Co Ltd

Inventors

• Kim Ye Seul
• Kim Kyoung Wan
• Yoon Yeo Jin
• Oh Sang Hyun
• Lee Keum Ju
• Lee Jin Woong
• Jeong Da Yeon
• Woo Sang Won

Classifications

• H10H20/819

  characterised by their shape, e.g. curved or truncated substrates · CPC title

• H10H20/0364

  of interconnections · CPC title

• H10H20/032

  of electrodes · CPC title

• H10H20/8314

  extending at least partially onto an outer side surface of the bodies · CPC title

• H10H20/8312

  extending at least partially through the bodies · CPC title