Solar cell metallization
US-2015068592-A1 · Mar 12, 2015 · US
US9397252B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9397252-B2 |
| Application number | US-201514594439-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 12, 2015 |
| Priority date | May 27, 2014 |
| Publication date | Jul 19, 2016 |
| Grant date | Jul 19, 2016 |
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A high efficiency configuration for a solar cell module comprises solar cells arranged in a shingled manner to form super cells, which may be arranged to efficiently use the area of the solar module, reduce series resistance, and increase module efficiency.
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What is claimed is: 1. A method comprising: forming a first metallization pattern along a first outside edge of a first surface of a semiconductor wafer; forming a second metallization pattern along a second outside edge of the first surface, the second outside edge opposite to the first outside edge; and forming a first scribe line between the first metallization pattern and the second metallization pattern; wherein: the first metallization pattern comprises a first finger pointing toward the second metallization pattern; the second metallization pattern comprises a second finger pointing toward the first metallization pattern; the first metallization pattern further comprises a first bus bar intersecting the first finger and located within 5 mm of the first outside edge; and the second metallization pattern comprises a second bus bar intersecting the second finger and located within 5 mm of the second outside edge. 2. A method as in claim 1 further comprising: forming on the first surface, a third metallization pattern not along the first outside edge or along the second outside edge, the third metallization pattern comprising, a third bus bar parallel to the first bus bar, and a third finger pointing toward the second metallization pattern; and forming a second scribe line between the third metallization pattern and the second metallization pattern, wherein the first scribe line is between the first metallization pattern and the third metallization pattern. 3. A method as in claim 2 wherein the first scribe line and the second scribe line are separated by a width having a ratio to a length of the semiconductor wafer, of between about 1:2 to about 1:20. 4. A method as in claim 3 wherein the length of the semiconductor wafer is about 156 mm or about 125 mm. 5. A method as in claim 2 wherein the semiconductor wafer includes chamfered corners. 6. A method as in claim 5 wherein: the first scribe line defines with the first outside edge, a first solar cell region comprising two chamfered corners and the first metallization pattern, the first solar cell region having a first area corresponding to a product of a length of the semiconductor wafer and a first width, minus a combined area of the two chamfered corners; and the second scribe line defines with the first scribe line, a second solar cell region not including chamfered corners and including the third metallization pattern, the second solar cell region having a second area corresponding to a product of the length and a second width narrower than the first width, such that the first area and the second area are approximately the same. 7. A method as in claim 6 wherein the length is about 156 mm or about 125 mm. 8. A method as in claim 2 wherein forming the first scribe line and forming the second scribe line comprise laser scribing. 9. A method as in claim 2 wherein forming the first metallization pattern, forming the second metallization pattern, and forming the third metallization pattern, comprise printing. 10. A method as in claim 9 wherein forming the first metallization pattern, forming the second metallization pattern, and forming the third metallization pattern, comprise screen printing. 11. A method as in claim 9 wherein forming the first metallization pattern comprises forming a plurality of contact pads comprising silver. 12. A method as in claim 2 wherein forming the first metallization pattern, forming the second metallization pattern, and forming the third metallization pattern, comprise electroplating. 13. A method as in claim 12 wherein the first metallization pattern, the second metallization pattern, and the third metallization pattern comprise copper. 14. A method as in claim 2 wherein the first metallization pattern comprises one or more of aluminum, tin, silver, and copper. 15. A method as in claim 2 wherein the semiconductor wafer comprises silicon. 16. A method as in claim 15 wherein the semiconductor wafer comprises crystalline silicon. 17. A method as in claim 2 further comprising forming a fourth metallization pattern on a second surface of the semiconductor wafer between the first outside edge and within 5 mm of a location of the second scribe line. 18. A method as in claim 17 wherein the first surface comprises a first conductivity type and the second surface comprises a second conductivity type opposite to the first conductivity type. 19. A method as in claim 17 wherein the fourth metallization pattern comprises a contact pad. 20. A method as in claim 1 further comprising applying a conductive adhesive to the semiconductor wafer. 21. A method as in claim 20 further comprising applying the conductive adhesive in contact with the first finger. 22. A method as in claim 21 wherein applying the conductive adhesive comprises screen printing or depositing utilizing a mask. 23. A method as in claim 1 further comprising separating the semiconductor wafer along the first scribe line to form a first solar cell strip including the first metallization pattern. 24. A method as in claim 23 wherein the separating comprises applying a vacuum to the semiconductor wafer along the first scribe line. 25. A method as in claim 24 further comprising disposing the semiconductor wafer on a belt moving to the vacuum. 26. A method as in claim 23 further comprising applying a conductive adhesive to the first solar cell strip. 27. A method as in claim 23 further comprising: arranging the first solar cell strip in a first super cell comprising at least nineteen solar cell strips each having a breakdown voltage of at least 10V, with long sides of adjacent solar cell strips overlapping with conductive adhesive disposed in between; and curing the conductive adhesive to bond adjacent overlapping solar cell strips electrically connected in series. 28. A method as in claim 27 wherein the arranging comprises forming a layered structure including an encapsulant, the method further comprising laminating the layered structure. 29. A method as in claim 28 wherein the curing occurs at least partially during the laminating. 30. A method as in claim 28 wherein the curing occurs distinct from the laminating. 31. A method as in claim 28 wherein the encapsulant comprises a thermoplastic olefin polymer. 32. A method as in claim 28 wherein the layered structure comprises: a white backing sheet; and darkened stripes on the white backing sheet. 33. A method as in claim 27 wherein the arranging comprises confining a spreading of the conductive adhesive with a metallization pattern feature. 34. A method as in claim 33 wherein the metallization pattern feature is on a front surface of the first solar cell strip. 35. A method as in claim 27 further comprising applying the conductive adhesive between the first super cell and an interconnect connecting a second super cell in series. 36. A method as in claim 27 further comprising connecting a ribbon conductor between a single bypass diode and the first super cell, the single bypass diode located in a first junction box of a first solar module in mating arrangement with a second junction box of a second solar module. 37. A method as in claim 27 w
Busbar structures for modules · CPC title
for photovoltaic devices or modules · CPC title
Geometries of grid contacts · CPC title
for photovoltaic cells · CPC title
Encapsulations or containers (for photovoltaic modules H10F19/80) · CPC title
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