Semiconductor integrated circuit apparatus and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9397192-B2
Application number	US-201514945964-A
Country	US
Kind code	B2
Filing date	Nov 19, 2015
Priority date	Jun 5, 2013
Publication date	Jul 19, 2016
Grant date	Jul 19, 2016

Abstract

A semiconductor integrated circuit apparatus and a method of manufacturing the same are provided. The semiconductor integrated circuit apparatus includes a semiconductor substrate having an active island, a gate buried in a predetermined portion of the active island, a source and a drain formed at both sides of the gate, and a current blocking layer formed in the active island corresponding to a lower portion of the drain. When current flows in from the drain, the current blocking layer is configured to discharge the current into the inside of the semiconductor substrate through a lower portion of the source.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor integrated circuit apparatus, the method comprising:
forming an active island by etching a semiconductor substrate by a predetermined depth;
forming a gate region by etching a predetermined portion of the active island;
forming a first impurity region in the active island by implanting a first impurity into the active island;
forming a gate by burying a conductive material in the gate region;
forming a source…

Assignees

• Sk Hynix Inc

Inventors

• Sim Joon Seop

Classifications

• H10P30/204

  Electricity · mapped topic

• H10P30/21

  Electricity · mapped topic

• H10P50/642

  Electricity · mapped topic

• H10D64/513

  Electricity · mapped topic

• H10D62/151

  Electricity · mapped topic