Termination design for high voltage device
US-9064897-B2 · Jun 23, 2015 · US
Termination design by metal strapping guard ring trenches shorted to a body region to shrink termination area
US9397154B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9397154-B2 |
| Application number | US-201514841687-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 31, 2015 |
| Priority date | Aug 25, 2011 |
| Publication date | Jul 19, 2016 |
| Grant date | Jul 19, 2016 |
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Abstract
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This invention discloses a semiconductor power device formed in a semiconductor substrate of a first conductivity type comprises an active cell area and a termination area surrounding the active cell area and disposed near edges of the semiconductor substrate. The termination area includes a plurality of trenches filled with a conductivity material forming a shield electrode and insulated by a dielectric layer along trench sidewalls and trench bottom surface wherein the trenches extending vertically through a body region of a second conductivity type near a top surface of the semiconductor substrate and further extending through a surface shield region of the first conductivity type. A dopant region of the second conductivity type disposed below the surface shield region extending across and surrounding a trench bottom portion of the trenches. At least a metal connector disposed above the top surface of the semiconductor substrates electrically connecting to the shield electrode of at least two trenches and shorted to the body region.
First claim
Opening claim text (preview).
We claim: 1. A semiconductor power device formed in a semiconductor substrate comprises an active cell area and a termination area surrounding the active cell area and disposed near an outer edge of the semiconductor substrate wherein: the termination area includes at least a first and a second termination zones wherein the first and second termination zones are supported on a voltage blocking layer near a bottom surface of the semiconductor substrate and wherein each of the first…
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Classifications
- H10D30/0291Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9397154B2 cover?
- This invention discloses a semiconductor power device formed in a semiconductor substrate of a first conductivity type comprises an active cell area and a termination area surrounding the active cell area and disposed near edges of the semiconductor substrate. The termination area includes a plurality of trenches filled with a conductivity material forming a shield electrode and insulated by a …
- Who is the assignee on this patent?
- Alpha & Omega Semiconductor
- What technology area does this patent fall under?
- Primary CPC classification H10D30/0291. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jul 19 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).