Process for forming a stack of different materials, and device comprising this stack

Patent metadata

Field	Value
Publication number	US-9397128-B2
Application number	US-201414503460-A
Country	US
Kind code	B2
Filing date	Oct 1, 2014
Priority date	Oct 2, 2013
Publication date	Jul 19, 2016
Grant date	Jul 19, 2016

Abstract

A stack of layers defines a filter and is formed by copper on hydrogenated silicon nitride supported by a carrier. The filter includes a layer of hydrogenated silicon nitride, a layer of silicon oxide on the layer of hydrogenated silicon nitride and a layer of copper on the layer of silicon oxide. The layer of hydrogenated silicon nitride may have, in a vicinity of its upper side, a ratio of a number of silicon atoms per cubic centimeter to a number of nitrogen atoms per cubic centimeter lower than 0.8 (or even lower than 0.6), with a number of silicon-hydrogen bonds smaller than or equal to 6×10 21 bonds per cubic centimeter (or even smaller than 0.5×10 21 bonds per cubic centimeter). The filter further includes an additional layer of copper between the layer of hydrogenated silicon nitride and the carrier.

First claim

What is claimed is:

1. A process, comprising:
forming a layer of hydrogenated silicon nitride directly on a lower layer of copper that is supported by a carrier, wherein the layer of hydrogenated silicon nitride has, in a vicinity of an upper side, a ratio of a number of silicon atoms per cubic centimeter to a number of nitrogen atoms per cubic centimeter that is lower than 0.8;
forming a layer of silicon oxide directly on the layer of hydrogenated silicon nitride; and
forming an upper layer of copper directly on the layer of silicon oxide.

2. The process according to claim 1 , wherein the layer of hydrogenated silicon nitride has, in the vicinity of the upper side, a number of silicon-hydrogen bonds smaller than or equal to 6×10 21 bonds per cubic centimeter.

3. The process according to claim 1 , wherein the layer of hydrogenated silicon nitride has, in the vicinity of the upper side, a compressive mechanical stress having an intensity in absolute value higher than or equal to 1 GPa.

4. The process according to claim 1 , wherein the layer of hydrogenated silicon nitride has, in the vicinity of the upper side, the number of silicon-hydrogen bonds smaller than 0.5×10 21 bonds per cubic centimeter.

5. The process according to claim 1 , wherein the layer of hydrogenated silicon nitride has, in the vicinity of the upper side, the ratio of the number of silicon atoms per cubic centimeter to the number of nitrogen atoms per cubic centimeter lower than 0.6.

6. The process according to claim 1 , wherein the vicinity of the upper side of the layer of hydrogenated silicon nitride comprises an upper portion of the layer of hydrogenated silicon nitride within a depth of less than about 50 nm from the upper side.

7. A device, comprising:
a carrier;
a lower layer of copper above the carrier;
a layer of hydrogenated silicon nitride directly in contact with the lower layer of copper, wherein the layer of hydrogenated silicon nitride has, in a vicinity of an upper side, a ratio of a number of silicon atoms per cubic centimeter to a number of nitrogen atoms per cubic centimeter that is lower than 0.8;
a layer of silicon oxide directly in contact with the layer of hydrogenated silicon nitride; and
an upper layer of copper directly in contact with the layer of silicon oxide.

8. The device according to claim 7 , wherein the layer of hydrogenated silicon nitride has, in the vicinity of the upper side, a number of silicon-hydrogen bonds smaller than or equal to 6×10 21 bonds per cubic centimeter.

9. The device according to claim 7 , wherein the layer of hydrogenated silicon nitride has, in the vicinity of the upper side, a compressive mechanical stress having an intensity in absolute value higher than or equal to 1 GPa.

10. The device according to claim 7 , wherein the layer of hydrogenated silicon nitride has, in the vicinity of the upper side, a number of silicon-hydrogen bonds smaller than 0.5×10 21 bonds per cubic centimeter.

11. The device according to claim 7 , wherein the layer of hydrogenated silicon nitride has, in the vicinity of the upper side, a ratio of the number of silicon atoms per cubic centimeter to the number of nitrogen atoms per cubic centimeter lower than 0.6.

12. The device according to claim 7 , wherein the lower layer of copper, the hydrogenated silicon nitride layer, the silicon oxide layer and the copper layer form a stack of layers defining a resonant optical filter.

13. The device according to claim 12 , further comprising a photosensitive region of the carrier positioned underneath the resonant optical filter.

14. A process, comprising:
forming a layer of hydrogenated silicon nitride on a carrier, wherein the layer of hydrogenated silicon nitride has, in a vicinity of an upper side, a compressive mechanical stress having an intensity in absolute value higher than or equal to 1 GPa;
forming a layer of silicon oxide on the layer of hydrogenated silicon nitride; and
forming a layer of copper on the layer of silicon oxide.

15. The process of claim 14 , wherein the layer of hydrogenated silicon nitride has, in the vicinity of the upper side, a ratio of a number of silicon atoms per cubic centimeter to a number of nitrogen atoms per cubic centimeter that is lower than 0.6.

16. The process of claim 14 , wherein the layer of hydrogenated silicon nitride has, in the vicinity of the upper side, a number of silicon-hydrogen bonds smaller than or equal to 6×10 21 bonds per cubic centimeter.

17. The process of claim 14 , wherein forming the layer of hydrogenated silicon nitride comprises forming the layer of hydrogenated silicon nitride on a lower layer of copper that is supported by said carrier.

18. The process of claim 14 , wherein the vicinity of the upper side of the layer of hydrogenated silicon nitride comprises an upper portion of the layer of hydrogenated silicon nitride within a depth of less than about 50 nm from the upper side.

19. A device, comprising:
a carrier;
a layer of hydrogenated silicon nitride supported by the carrier, wherein the layer of hydrogenated silicon nitride has, in a vicinity of an upper side, a compressive mechanical stress having an intensity in absolute value higher than or equal to 1 GPa;
a layer of silicon oxide on the layer of hydrogenated silicon nitride; and
a layer of copper on the layer of silicon oxide.

20. The device of claim 19 , wherein the layer of hydrogenated silicon nitride has, in the vicinity of the upper side, a ratio of the number of silicon atoms per cubic centimeter to the number of nitrogen atoms per cubic centimeter that is lower than 0.6.

21. The device of claim 19 , wherein the layer of hydrogenated silicon nitride has, in the vicinity of the upper side, a number of silicon-hydrogen bonds smaller than or equal to 6×10 21 bonds per cubic centimeter.

22. The device of claim 19 , further comprising a lower layer of copper located under the layer of hydrogenated silicon nitride and above the carrier.

23. The device of claim 22 , wherein the lower layer of copper, the hydrogenated silicon nitride layer, the silicon oxide layer and the copper layer form a stack of layers defining a resonant optical filter.

24. The device of claim 23 , further comprising a photosensitive region of the carrier positioned underneath the resonant optical filter.

Assignees

• St Microelectronics Sa
• Commissariat Energie Atomique

Inventors

• Gros D Aillon Patrick
• Marty Michel

Classifications

• H10F39/8053

  Colour filters · CPC title

• H10F39/024

  of coatings or optical elements · CPC title

• G02B5/281 Primary

  designed for the infrared light · CPC title

• H04N9/045

  Electricity · mapped topic

• G02B5/20 Primary

  Filters (polarising elements G02B5/30) · CPC title