Device having reduced pad peeling during tensile stress testing and a method of forming thereof

US9396993B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9396993-B2
Application numberUS-201414256241-A
CountryUS
Kind codeB2
Filing dateApr 18, 2014
Priority dateJun 19, 2013
Publication dateJul 19, 2016
Grant dateJul 19, 2016

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

The present disclosure relates to a method for forming a semiconductor device. The method includes forming a first aluminum pad layer on a metal layer, forming an adhesion layer on the first aluminum pad layer, etching the adhesion layer so as to form a patterned adhesion layer, and forming a second aluminum pad layer on the first aluminum pad layer and the patterned adhesion layer.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for forming a semiconductor device, comprising: forming a first aluminum pad layer on a metal layer; forming an adhesion layer on the first aluminum pad layer; etching the adhesion layer so as to form a patterned adhesion layer; forming a second aluminum pad layer on the first aluminum pad layer and the patterned adhesion layer; and reducing a width of the first aluminum pad layer after a plurality of spaced portions of the patterned adhesio…

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What does patent US9396993B2 cover?
The present disclosure relates to a method for forming a semiconductor device. The method includes forming a first aluminum pad layer on a metal layer, forming an adhesion layer on the first aluminum pad layer, etching the adhesion layer so as to form a patterned adhesion layer, and forming a second aluminum pad layer on the first aluminum pad layer and the patterned adhesion layer.
Who is the assignee on this patent?
Semiconductor Mfg Int Shanghai
What technology area does this patent fall under?
Primary CPC classification H10W72/90. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jul 19 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).