Apparatus including a light emitting device, a layer having a positive refractive index, and a layer having a negative refractive index

Patent metadata

Field	Value
Publication number	US-9395451-B2
Application number	US-201314028083-A
Country	US
Kind code	B2
Filing date	Sep 16, 2013
Priority date	Sep 29, 2012
Publication date	Jul 19, 2016
Grant date	Jul 19, 2016

Abstract

An apparatus can include a light emitting device and a light sensing device optically coupled to the light emitting device via a first layer and a second layer. In an embodiment, the first layer can have a first thickness and a first index of refraction with a value greater than 0 and the second layer can have a second thickness and a second index of refraction with a value less than 0. In a particular embodiment, the light emitting device can include a scintillator and the light sensing device can include a photosensor.

First claim

What is claimed is:

1. An apparatus comprising:
a light emitting device comprising a first scintillator pixel and a second scintillator pixel, each of the first and second scintillator pixels having a light emitting end;
a first layer having a first thickness and a first index of refraction with a value greater than 0, the first layer extending continuously over and coupled to the light emitting ends of the first and second scintillator pixels;
a second layer having a second thickness and a second index of refraction with a value less than 0; and
a light sensing device optically coupled to the light emitting device via the first layer and the second layer, wherein an absolute value of a first product of the first thickness and the first index of refraction is within at least approximately 35% of an absolute value of a second product of the second thickness and the second index of refraction.

2. The apparatus of claim 1 , wherein the light sensing device comprises a first photosensor corresponding to the first scintillator pixel and the second photosensor corresponding to the second scintillator pixel.

3. A radiation detection apparatus comprising:
a first scintillator pixel having a first light emitting end and a second scintillator pixel having a second light emitting end;
a first photosensor coupled to the first light emitting end and a second photosensor coupled to the second light emitting end;
a first layer coupled between the scintillator pixels and the photosensors, the first layer having a first thickness and a first index of refraction with a value that is greater than 0; and
a second layer coupled between the scintillator pixels and the photosensors, the second layer having a second thickness and a second index of refraction with a value that is less than 0,
wherein one of the first and second layers is closer to the scintillator pixels as compared to the photosensors and extends continuously over the first and second light emitting ends.

4. The radiation detection apparatus of claim 3 , wherein an absolute value of a product of the first thickness and the first index of refraction is within 31% of an absolute value of a product of the second thickness and the second index of refraction.

5. The radiation detection apparatus of claim 3 , wherein the first layer is closer to the scintillator as compared to the photosensor and the second layer is closer to the photosensor as compared to the scintillator.

6. The radiation detection apparatus of claim 3 , wherein the first layer is closer to the photosensor as compared to the second layer and the second layer is closer to the scintillator as compared to the first layer.

7. The radiation detection apparatus of claim 3 , further comprising a third layer having a third thickness and a third index of refraction with a value that is greater than 0.

8. The radiation detection apparatus of claim 7 , wherein the value of the third index of refraction is substantially equal to the value of the first index of refraction.

9. The radiation detection apparatus of claim 3 , wherein the first thickness, the second thickness, or both is at least approximately 0.025 microns, at least approximately 0.5 microns and no greater than approximately 25 mm.

10. The radiation detection apparatus of claim 3 , further comprising an array of scintillator pixels and an array of photosensors, wherein first and second scintillator pixels are scintillator pixels of the array of scintillator pixels and the first and second photosensors are photosensors of the array of photosensors.

11. The radiation detection apparatus of claim 10 , wherein a number of scintillator pixels of the array of scintillator pixels is the same as a number of photosensors of the array of photosensors.

12. The radiation detection apparatus of claim 10 , wherein a number of the scintillator pixels of the array of scintillator pixels is different from a number of photosensors of the array of photosensors.

13. The radiation detection apparatus of claim 3 , wherein the first layer includes an organic polymer.

14. The radiation detection apparatus of claim 3 , wherein the second layer includes a plurality of sub-layers.

15. The radiation detection apparatus of claim 14 , wherein the plurality of sub-layers are arranged in the form of a grid.

16. The radiation detection apparatus of claim 3 , wherein the second layer includes a dielectric material.

17. The radiation detection apparatus of claim 3 , wherein the second layer includes a metal, a metal alloy, or a combination thereof.

18. The radiation detection apparatus of claim 3 , wherein the second layer includes a plurality of nanostructures.

19. The radiation detection apparatus of claim 3 , wherein the scintillator emits scintillating light having a first spectrum of wavelengths, wherein the second index of refraction is less than 0 for light having wavelengths within a second spectrum of wavelengths, and wherein at least a portion of the wavelengths of the second spectrum are included in the wavelengths of the first spectrum.

20. The radiation detection apparatus of claim 19 , wherein substantially all of the wavelengths of the second spectrum are included in the first spectrum.

Assignees

• Menge Peter R
• Saint Gobain Ceramics

Inventors

• Menge Peter R

Classifications

• G01T1/2002 Primary

  Optical details, e.g. reflecting or diffusing layers · CPC title

• G01T1/2006

  using a combination of a scintillator and photodetector which measures the means radiation intensity · CPC title

• G01T1/2018

  Scintillation-photodiode combinations · CPC title

• G01T1/20185

  Coupling means between the photodiode and the scintillator, e.g. optical couplings using adhesives with wavelength-shifting fibres · CPC title

• G01T1/20183 Primary

  Arrangements for preventing or correcting crosstalk, e.g. optical or electrical arrangements for correcting crosstalk · CPC title