Methods of depositing nanomaterial and methods of making a device
US-9034669-B2 · May 19, 2015 · US
US9390920B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9390920-B2 |
| Application number | US-201414563571-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 8, 2014 |
| Priority date | Apr 7, 2006 |
| Publication date | Jul 12, 2016 |
| Grant date | Jul 12, 2016 |
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Methods for depositing nanomaterial onto a substrate are disclosed. Also disclosed are compositions useful for depositing nanomaterial, methods of making devices including nanomaterials, and a system and devices useful for depositing nanomaterials.
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What is claimed is: 1. A method for depositing a nanomaterial onto a substrate, the method comprising: applying a composition comprising the nanomaterial comprising a plurality of semiconductor nanocrystals to an applicator surface; positioning a mask including a predetermined pattern of apertures comprising a predetermined shape and size on the substrate; and contacting the applicator surface to the substrate through the apertures to apply a pattern of the nanomaterial to the substrate, wherein the applicator including the composition is dried prior to contacting the substrate. 2. A method in accordance with claim 1 wherein the composition comprising the nanomaterial comprising a plurality of semiconductor nanocrystals is applied to the applicator surface from a transfer surface. 3. A method for depositing a nanomaterial onto a substrate, the method comprising: applying a composition comprising the nanomaterial comprising a population of semiconductor nanocrystals to an applicator surface; positioning a mask including a predetermined pattern of apertures comprising a predetermined shape and size on the substrate; and contacting the applicator surface to the substrate through the apertures to apply a pattern of the nanomaterial to the substrate, wherein the applicator including the composition is dried prior to contacting the substrate. 4. A method in accordance with claim 3 wherein the composition comprising the nanomaterial comprising a population of semiconductor nanocrystals is applied to the applicator surface from a transfer surface. 5. A method in accordance with claim 1 wherein the steps are repeated to separately deposit each of one or more additional compositions comprising semiconductor nanocrystals onto the substrate through apertures in the mask. 6. A method in accordance with claim 1 wherein the semiconductor nanocrystals comprise a core/shell structure. 7. A method in accordance with claim 1 wherein the semiconductor nanocrystals comprise a core/shell structure, wherein the core comprises a Group IV element, a Group II-VI compound, a Group II-V compound, a Group III-VI compound, a Group III-V compound, a Group IV-VI compound, a Group compound, a Group II-IV-VI compound, a Group II-IV-V compound, alloys thereof and/or mixtures thereof. 8. A method in accordance with claim 1 wherein the semiconductor nanocrystals comprise a core/shell structure, wherein the shell comprises a Group IV element, a Group II-VI compound, a Group II-V compound, a Group III-VI compound, a Group III-V compound, a Group IV-VI compound, a Group I-III-VI compound, a Group II-IV-VI compound, a Group II-IV-V compound, alloys thereof and/or mixtures thereof. 9. A method in accordance with claim 1 wherein the semiconductor nanocrystals include at least one ligand attached to the surface. 10. A method in accordance with claim 1 wherein the mask comprises a polyimide film, a fluorinated polyimide film, or a film including a fluorinated polyimide coating on at least one surface thereof. 11. A method in accordance with claim 3 wherein the applicator including the composition is dried prior to contacting the substrate. 12. A method in accordance with claim 3 wherein the steps are repeated to separately deposit each of one or more additional compositions comprising semiconductor nanocrystals onto the substrate through apertures in the mask. 13. A method in accordance claim 3 wherein the semiconductor nanocrystals comprise a core/shell structure. 14. A method in accordance with claim 3 wherein the semiconductor nanocrystals comprise a core/shell structure, wherein the core comprises a Group IV element, a Group II-VI compound, a Group II-V compound, a Group III-VI compound, a Group III-V compound, a Group IV-VI compound, a Group I-III-VI compound, a Group II-IV-VI compound, a Group II-IV-V compound, alloys thereof and/or mixtures thereof. 15. A method in accordance with claim 3 the semiconductor nanocrystals comprise a core/shell structure, wherein the shell comprises a Group IV element, a Group II-VI compound, a Group II-V compound, a Group III-VI compound, a Group III-V compound, a Group IV-VI compound, a Group I-III-VI compound, a Group II-IV-VI compound, a Group II-IV-V compound, alloys thereof and/or mixtures thereof. 16. A method in accordance with claim 3 wherein the semiconductor nanocrystals include at least one ligand attached to the surface. 17. A method in accordance with claim 3 wherein the mask comprises a polyimide film, a fluorinated polyimide film, or a film including a fluorinated polyimide coating on at least one surface thereof.
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