Electrostatic member in forming touch display apparatus and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9389452-B2
Application number	US-201314065686-A
Country	US
Kind code	B2
Filing date	Oct 29, 2013
Priority date	Mar 4, 2013
Publication date	Jul 12, 2016
Grant date	Jul 12, 2016

Abstract

A touch display apparatus includes a base substrate, a light blocking semiconductor pattern disposed on the base substrate and configured to block a visible light and transmit an infrared light, a sensing element disposed on the light blocking semiconductor pattern and configured to detect a touch position using an incident infrared light, a driving element configured to drive the sensing element, a signal line electrically connected with the sensing element or the driving element, and a wiring connecting part disposed under the signal line and including a same material as the light blocking semiconductor pattern.

First claim

What is claimed is:

1. A touch display apparatus comprising:
a base substrate;
a light blocking semiconductor pattern on the base substrate, and configured to block a visible light and transmit an infrared light;
a sensing element on the light blocking semiconductor pattern and configured to detect a touch position using an incident infrared light;
a driving element configured to drive the sensing element;
a signal line electrically connected with the sensing element or the driving element; and
a wiring connecting part under the signal line and comprising a same material as that of the light blocking semiconductor pattern.

2. The touch display apparatus of claim 1 , wherein the light blocking semiconductor pattern comprises amorphous silicon germanium.

3. The touch display apparatus of claim 1 , wherein the sensing element comprises:
a semiconductor pattern on the light blocking semiconductor pattern;
a source electrode overlapping a first end of the semiconductor pattern;
a drain electrode spaced apart from the source electrode and overlapping a second end of the semiconductor pattern opposing the first end; and
a gate electrode on the source electrode and the drain electrode.

4. The touch display apparatus of claim 1 , wherein the wiring connecting part comprises amorphous silicon germanium.

5. The touch display apparatus of claim 1 , wherein the light blocking semiconductor pattern and the wiring connecting part are in a same layer.

6. A method of manufacturing a touch display apparatus, comprising:
providing a semiconductor layer on a base substrate, the semiconductor layer comprising:
a light blocking semiconductor pattern configured to block a visible light and transmit an infrared light,
a wiring connecting part in a display area of the apparatus and comprising a same material as that of the light blocking semiconductor pattern, and
a guard ring in a peripheral area of the apparatus and connected with the wiring connecting part;

providing a metal pattern comprising a signal line on the wiring connecting part and lengthwise extending in a direction; and
providing a sensing element on the metal pattern, and configured to detect a touch position using an incident infrared light.

7. The method of claim 6 , wherein the providing the sensing element comprises:
providing a semiconductor pattern on the light blocking semiconductor pattern;
providing a source electrode and a drain electrode on the semiconductor pattern;
providing an insulation layer on the source electrode and the drain electrode; and
providing a gate electrode on the insulation layer.

8. The method of claim 7 , wherein the providing the insulation layer comprises partially removing the guard ring and the wiring connecting part.

9. The method of claim 6 , wherein the metal pattern further comprises:
a common voltage wiring in the peripheral area and lengthwise extending in a direction crossing the signal line; and
a pad part in the peripheral area, and spaced apart from the signal line.

10. The method of claim 6 , wherein the semiconductor layer comprises amorphous silicon germanium.

11. The method of claim 9 , further comprising forming a connecting electrode connecting the signal line and the pad part to each other,
wherein the connecting electrode is in a same layer as the gate electrode.

12. The method of claim 9 , wherein the wiring connecting part connects the guard ring with the signal line and connects the guard ring with the pad part.

Assignees

• Samsung Display Co Ltd

Inventors

• Mun Sung-Jin
• Kim Dae-Cheol
• Kim Woong-Kwon
• Kim Sung-Ryul
• Jeong Ki-Hun
• Cho Byeong-Hoon
• Bang Jung-Suk
• Han Kun-Wook

Classifications

• H10F55/10

  wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices · CPC title

• H10F39/198

  Contact-type image sensors [CIS] · CPC title

• G02F1/136209

  Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element · CPC title

• G02F2203/11

  involving infrared radiation · CPC title

• G02F2001/13312

  Physics · mapped topic