Product made of dense silicon carbide

Patent metadata

Field	Value
Publication number	US-9388084-B2
Application number	US-201314397406-A
Country	US
Kind code	B2
Filing date	Apr 15, 2013
Priority date	Apr 27, 2012
Publication date	Jul 12, 2016
Grant date	Jul 12, 2016

Abstract

Sintered product exhibiting a relative density of greater than 97% and composed of:
more than 92% by weight of silicon carbide, between 0.5% and 8% by weight of an amorphous secondary phase comprising the elements O, Si and one or two elements chosen from Al and Y, less than 2% of other elements, present in said product in the form of an additional phase or of unavoidable impurities, in which the silicon carbide is present in the form of crystalline grains and in which said secondary phase is amorphous and located essentially at the boundaries of the silicon carbide grains.

First claim

The invention claimed is:

1. A sintered product, consisting essentially of:
more than 92% by weight of silicon carbide,
between 0.5% and 8% by weight of an amorphous secondary phase comprising elements O, Si, and either or both of Al and Y, and
less than 2% of other elements, present in the product as an additional phase or as unavoidable impurities,
wherein the silicon carbide is present as crystalline grains having a mean size greater than 250 nanometers,
wherein the sintered product has a relative density of greater than 97%, and
wherein the secondary phase is amorphous and located essentially a boundaries of the silicon carbide grains.

2. The product as claimed in claim 1 , wherein the mean size of the crystalline grains is less than 3 micrometers.

3. The product as claimed in claim 1 , wherein an amount of amorphous secondary phase is greater than 2% and less than 7% of a weight of the product.

4. The product as claimed in claim 3 , wherein the amount of amorphous secondary phase is greater than 3% and less than 6% of the weight of the product.

5. The product as claimed in claim 1 , wherein the amorphous secondary phase comprises Al, Si, and O.

6. The product as claimed in claim 1 , wherein the amorphous secondary phase comprises Y, Si, and O.

7. The product as claimed in claim 1 , wherein the amorphous secondary phase comprises Y, Al, Si, and O.

8. The product as claimed in claim 1 , wherein an overall content of other elements is less than 1%.

9. The product as claimed in claim 1 , wherein a mean size of the grains is from greater than 250 nanometers to 1 micrometer.

10. The product as claimed in claim 1 , wherein the relative density is greater than 98.5%.

11. The product as claimed in claim 1 , wherein a number of free carbon inclusions between the silicon carbide grains on a surface area equal to 4 μm 2 is less than 2.

12. An abrasion-resistant protective part, comprising the product as claimed in claim 1 , wherein the abrasion-resistant protective part is resistant to impact wear.

13. An installation, comprising:
the sintered product as claimed in claim 1 ,
wherein the installation is selected from the group consisting of a hopper, an item of equipment for transportation or conveying of granular or pulverulent solids, an item of equipment for comminution under dry conditions or in a wet medium, an item of equipment for particle size selection, a grinding bead, a fan blade, a dynamic or static particle size selector, a spray or injection nozzle, a rotor or stirrer for suspensions, a seal, a pump, a collar or a bearing of a rotating shaft, a valve, and a faucet.

14. A process for manufacturing the sintered product as claimed in claim 1 , the process comprising, successively:
preparing a slip comprising a solvent, a surface-active agent, optionally an acid and/or a base, and more than 4% by weight based on the slip of a mixture of powders comprising a silicon carbide powder and a powder of an oxide or precursor of an oxide of Al or Y or both,
optionally casting the slip in a mold,
freezing the slip, thereby forming a preform comprising ice crystals separated by walls, the walls comprising the mixture of silicon carbide powder and powder of the oxide or precursor, thereby obtaining a frozen slip,
optionally withdrawing the frozen slip preform from the mold,
removing the ice crystals from the frozen slip preform, optionally withdrawn from the mold, thereby obtaining an assembly of agglomerates,
optionally grinding (breaking up) and/or sieving assembly of agglomerates, thereby obtaining a powder,
sintering the powder by SPS (Spark Plasma Sintering and shaping the product thereby obtaining the product,
wherein a median size of the particles of the silicon carbide powder is less than 2 μm, and
a median size of the particles of the powder of the oxide or precursor is less than that of the silicon carbide powder.

15. The process as claimed in claim 14 , wherein the powder of the oxide or precursor is a YAG (Y 3 Al 5 O 12 ) powder.

16. The process as claimed in claim 14 , wherein the powder of the oxide or precursor is mixed with a silica powder or silica precursor powder, the median size of which is less than that of the silicon carbide powder.

17. The product as claimed in claim 1 , wherein an amount of amorphous secondary phase is greater than 0.5% and less than 7% of a weight of the product.

18. The product as claimed in claim 1 , wherein the amorphous secondary phase comprises an amorphous oxide.

19. The product as claimed in claim 1 , wherein a mean size of the grains is from 0.5 micrometers to less than 3 micrometers.

Assignees

• Saint Gobain Ct Recherches
• Centre Nat Rech Scient

Inventors

• Rossiquet Gilles
• Jorge Eric

Classifications

• C04B2235/3225

  Yttrium oxide or oxide-forming salts thereof · CPC title

• C04B2235/3217

  Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina · CPC title

• C04B2235/666

  Applying a current during sintering, e.g. plasma sintering [SPS], electrical resistance heating or pulse electric current sintering [PECS] · CPC title

• C04B35/565 Primary

  based on silicon carbide · CPC title

• C04B35/62625

  Wet mixtures · CPC title