Electromagnetic wave generation device and detection device
US-9236833-B2 · Jan 12, 2016 · US
US9385654B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9385654-B2 |
| Application number | US-201414208198-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 13, 2014 |
| Priority date | Sep 16, 2011 |
| Publication date | Jul 5, 2016 |
| Grant date | Jul 5, 2016 |
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Techniques for obtaining a frequency standard using the crystal field splitting frequency of nitrogen vacancy center in diamond are disclosed. In certain exemplary embodiments, a microwave field is applied to the diamond and optically exciting the diamond under green light. The photoluminescent response of the diamond is measured by a photodetector. The intensity of the photoluminescent response can be used to determine the phase shift between the microwave and the crystal field splitting frequency. The microwave field frequency can be adjusted until the phase shift is below a predetermined threshold, and the microwave frequency can then be output for use as a standard.
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The invention claimed is: 1. A method for obtaining a frequency standard using the crystal field splitting frequency of at least one nitrogen vacancy center in at least one diamond structure, comprising: applying a microwave field to the at least one diamond structure, the microwave field having a frequency initially equal to an initial frequency; optically exciting the at least one diamond structure to create photoluminescence having a photoluminescent characteristic based at least on the frequency of the microwave field; detecting at least a first measurement of the photoluminescent characteristic at the initial frequency; determining, based on the first measurement, a phase shift for the initial frequency from the constant crystal field splitting frequency of the at least one diamond structure; varying the frequency of the microwave field until a phase shift for the frequency of the microwave field from the constant crystal field splitting frequency is below a predetermined threshold; and using the frequency of the microwave field for which the phase shift is below the predetermined threshold as a frequency standard. 2. The method of claim 1 , wherein the frequency of the microwave field is continuously monitored to prevent drift of the frequency standard. 3. The method of claim 1 , further comprising surrounding the at least one diamond structure with a dielectric cavity prior to applying the microwave field to allow optical excitation at a lower output power. 4. The method of claim 1 , wherein the optically exciting further comprises optically pumping the at least one diamond structure. 5. The method of claim 4 , wherein detecting at least a first measurement further comprises continuously detecting measurements. 6. The method of claim 1 , wherein the optically exciting further comprises continuously optically pumping the at least one diamond structure. 7. The method of claim 1 , wherein the at least one diamond structure comprises a first and a second diamond structures, each having at least one nitrogen vacancy center, and wherein the first measurement detecting further comprises simultaneously detecting a first measurement for the first diamond structure and a first measurement for the second diamond structure, to thereby stabilize the detected measurements with respect to temperature. 8. The method of claim 1 , the at least one nitrogen vacancy having a temperature dependence, and further comprising controlling the temperate dependence of the at least one nitrogen vacancy center by engineered strain. 9. The method of claim 1 , wherein the optically exciting further comprises applying pulsed emissions to excite the at least one nitrogen vacancy center. 10. The method of claim 9 , wherein the at least one nitrogen vacancy center is optically excited prior to the microwave pulse emissions. 11. The method of claim 9 , further comprising: optically exciting the at least one nitrogen vacancy center with a pulse of light having a wavelength of 532 nm; applying a π/4 microwave pulse; waiting a time of period T; applying a pi microwave pulse; waiting a second time of period T; applying a π/4 microwave pulse in the same phase as the first π/4 microwave pulse; optically exciting the at least one nitrogen vacancy center with a pulse of light having a wavelength of 532 nm; measuring the transient fluorescence response of the at least one nitrogen vacancy center; and determining, from the transient fluorescence response, the phase shift of the applied microwave pulse from the crystal field splitting frequency of the at least one nitrogen vacancy center in the at least one diamond structure. 12. A system for obtaining a frequency standard using the crystal field splitting frequency of at least one nitrogen vacancy center in at least one diamond structure, comprising: a dielectric cavity adapted to at least partially encompass the at least one diamond structure; a light source, operatively configured to excite the at least one nitrogen vacancy, thereby allowing the at least one nitrogen vacancy center to produce a photoluminescent response; a photodetector disposed proximal to the dielectric cavity and opposite the light source for detecting photoluminescence; a stripline, disposed in the plane of and at least partially encompassing the at least one diamond structure, for applying microwave emissions having a frequency to the at least one diamond structure; a processor, coupled to the photodetector and the stripline, to calculate the phase shift of the frequency of the microwave emissions from the crystal field splitting frequency of the at least one nitrogen vacancy center in the at least one diamond structure; and a controller, coupled to the processor and the stripline, to adjust the frequency of the microwave emissions from the stripline based on the phase shift calculated by the processor until the phase shift is below a predetermined threshold, wherein the frequency for which the phase shift is below the predetermined threshold is a frequency standard. 13. The system of claim 12 , wherein the photodetector comprises a silicon photodiode. 14. The system of claim 12 , wherein the light source comprises a surface emitting laser adapted for generation of a doubled 1064 nm beam. 15. The system of claim 12 , wherein the at least one diamond structure is coupled to a single clamp to thereby induce strain thereon. 16. The system of claim 12 , wherein the dielectric cavity comprises a pair of Bragg reflectors to create a 532 nm resonant cavity. 17. The system of claim 16 , wherein the pair of Bragg reflectors comprises one reflector placed on one face of the at least one diamond structure outside the plane of the stripline for applying microwave emissions, and further comprises the second Bragg reflector placed on the opposite face of the at least one diamond structure. 18. The system of claim 12 , wherein the light source comprises a laser adapted to continuously irradiate the at least one diamond structure. 19. The system of claim 18 , wherein the stripline comprises a microwave source adapted to apply microwave emissions continuously upon the at least one diamond structure. 20. The system of claim 12 , wherein the light source comprises a laser adapted for generation of pulses for application to the at least one diamond structure. 21. The system of claim 20 , wherein the stripline comprises a microwave source adapted for generation of pulsed emissions upon the at least one diamond structure. 22. The system of claim 12 , wherein the at least one diamond structure comprises a first and a second diamond structures, each having at least one nitrogen vacancy center, wherein the processor is further adapted for simultaneously detecting a first measurement for the first diamond structure and a first measurement for the second diamond structure, to thereby stabilize the detected measurements with respect to temperature. 23. The system of claim 22 , further comprising a first substrate having a first thermal expansion coefficient and a second substrate having a second thermal expansion coefficient, wherein the first diamond structure is coupled to the first substrate and the second diamond structure is coupled to the second substrate, and wherein the first and second thermal expansion coefficients are different.
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