Optoelectronic semiconductor device with protective and reflective sheaths

Patent metadata

Field	Value
Publication number	US-9385258-B2
Application number	US-201314376165-A
Country	US
Kind code	B2
Filing date	Feb 8, 2013
Priority date	Feb 10, 2012
Publication date	Jul 5, 2016
Grant date	Jul 5, 2016

Abstract

An optoelectronic semiconductor device includes at least one radiation-emitting and/or radiation-receiving semiconductor chip including a radiation passage surface and a mounting surface opposite the radiation passage surface, wherein the mounting surface includes a first electrical contact structure and a second electrical contact structure electrically insulated from the first electrical contact structure, and wherein the radiation passage surface is free of contact structures, a reflective sheath surrounding the at least one semiconductor chip at least in sections, and a protective sheath surrounding the at least one semiconductor chip and/or the reflective sheath at least in sections.

First claim

The invention claimed is:

1. An optoelectronic semiconductor device comprising:
at least one radiation-emitting semiconductor chip comprising a radiation passage surface and a mounting surface opposite the radiation passage surface, wherein the mounting surface comprises a first electrical contact structure and a second electrical contact structure electrically insulated from the first electrical contact structure, and wherein the radiation passage surface is free of contact structures,
a reflective sheath surrounding the at least one semiconductor chip at least in sections,
a protective sheath surrounding the at least one semiconductor chip or the reflective sheath at least in sections, and
a conversion element directly disposed on the radiation passage surface of the semiconductor chip that converts the radiation emitted by the semiconductor chip, at least partially into radiation of a different wavelength, wherein the conversion element is completely uncovered by the reflective sheath, wherein the protective sheath is formed by a casting compound and the reflective sheath is embedded into the casting compound.

2. The semiconductor device according to claim 1 , wherein the semiconductor chip is a volume emitter and the semiconductor device is, by virtue of the reflective sheath, a surface emitter.

3. The semiconductor device according to claim 1 , wherein at the mounting surface a region between the first electrical contact structure and the second electrical contact structure is free of material of the reflective sheath.

4. The semiconductor device according to claim 1 , wherein the reflective sheath contains light-scattering or light-reflecting particles.

5. The semiconductor device according to claim 4 , wherein the light-scattering or light-reflecting particles are TiO 2 particles, BaSO 4 particles, ZnO particles, Al x O y particles and/or ZrO 2 particles.

6. The semiconductor device according to claim 1 , wherein the reflective sheath comprises a silicone filled with light-scattering or light-reflecting particles.

7. The semiconductor device according to claim 1 , wherein the reflective sheath is formed by a casting compound.

8. The semiconductor device according to claim 1 , wherein at least one surface of the reflective sheath remote from the semiconductor chip is curved.

9. The semiconductor device according to claim 1 , wherein the protective sheath is transparent to the radiation emitted by the semiconductor chip.

10. The semiconductor device according to claim 1 , wherein the semiconductor chip and the reflective sheath are arranged on a carrier substrate and the reflective sheath extends from the carrier substrate to the semiconductor chip, wherein the reflective sheath extends at the most to an upper chip edge.

11. The semiconductor device according to claim 10 , further comprising a border surrounding the semiconductor chip, wherein the reflective sheath is delimited by the circumferential border.

12. The semiconductor device according to claim 1 , wherein in the radiation direction an optical element is disposed downstream of the semiconductor chip.

13. The semiconductor device according to claim 1 , wherein the conversion element is a converter plate or a converter layer.

14. The semiconductor device according to claim 1 , wherein the protective sheath is arranged spaced apart from the at least one semiconductor chip.

15. An optoelectronic semiconductor device comprising:
at least one radiation-emitting and/or radiation-receiving semiconductor chip comprising a radiation passage surface and a mounting surface opposite the radiation passage surface, wherein the mounting surface comprises a first electrical contact structure and a second electrical contact structure electrically insulated from the first electrical contact structure, and wherein the radiation passage surface is free of contact structures,
a reflective sheath surrounding the at least one semiconductor chip at least in sections, and
a protective sheath that mechanically stabilizes the device, and is a single housing of the device,
a conversion element directly disposed on the radiation passage surface of the semiconductor chip, wherein the conversion element converts the radiation emitted by the semiconductor chip, at least partially into radiation of a different wavelength, the conversion element not being covered by the reflective sheath,
wherein the protective sheath is transparent to the radiation emitted by the semiconductor chip, and
the protective sheath surrounds the at least one semiconductor chip, the reflective sheath and the conversion element at least in sections.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Schlereth Thomas
• Kaiser Stephan
• Linkov Alexander

Classifications

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10H20/855

  Optical field-shaping means, e.g. lenses · CPC title

• H10H20/854

  characterised by their material, e.g. epoxy or silicone resins · CPC title

• H10H20/856

  Reflecting means · CPC title

• H10H20/852

  Encapsulations · CPC title