Method of forming a metal from a cobalt metal precursor

Patent metadata

Field	Value
Publication number	US-9385033-B2
Application number	US-201314040109-A
Country	US
Kind code	B2
Filing date	Sep 27, 2013
Priority date	Sep 27, 2013
Publication date	Jul 5, 2016
Grant date	Jul 5, 2016

Abstract

A metal precursor and a method comprising decomposing a metal precursor on an integrated circuit device; and forming a metal from the metal precursor, wherein the metal precursor is selected from the group consisting of (i) a Co 2 (CO) 6 (R 1 C≡CR 2 ), wherein R 1 and R 2 are individually selected from a straight or branched monovalent hydrocarbon group have one to six carbon atoms that may be interrupted and substituted; (ii) a mononuclear cobalt carbonyl nitrosyl; (iii) a cobalt carbonyl bonded to one of a boron, indium, germanium and tin moiety; (iv) a cobalt carbonyl bonded to a mononuclear or binuclear allyl; and (v) a cobalt(II) complex comprising nitrogen-based supporting ligands.

First claim

What is claimed is:

1. A method comprising:
decomposing a metal precursor on an integrated circuit device; and
forming a metal from the metal precursor,
wherein the metal precursor is selected from the group consisting of:
(i) a mononuclear cobalt monocarbonyl nitrosyl or cobalt dicarbonyl nitrosyl;
(ii) a cobalt carbonyl bonded to one of a boron, indium, germanium and tin moiety;
(iii) a mononuclear cobalt carbonyl bonded to a mononuclear or binuclear allyl; and
(iv) a cobalt(II) complex comprising nitrogen-based supporting ligands selected from the group consisting of:

wherein R 3 , R 4 , R 5 and R 6 are individually selected from a straight or branched monovalent hydrocarbon group have one to three carbon atoms that may be substituted and L 1 , L 2 , L 3 and L 4 are independently selected from a substituted amine and quinuclidine.

2. The method of claim 1 , wherein the metal precursor comprises a mononuclear cobalt carbonyl nitrosyl selected from the group consisting of:

wherein R 7 , R 8 , R 9 , R 10 , R 11 , R 12 , R 13 , R 14 , R 15 , R 16 and R 17 are independently selected from a straight or branched chain alkyl having one to four carbon atoms.

3. The method of claim 1 , wherein the metal precursor is selected from the group consisting of:

wherein R 18 , R 19 , R 20 , R 21 , R 22 and R 23 are independently selected from a straight or branched chain alkyl having one to four carbon atoms and R 20 and R 21 may further individually be a substituted amine.

4. The method of claim 1 , wherein the metal precursor is selected from the group consisting of:

wherein R 24 , R 25 and R 26 are independently selected from a straight or branched chain alkyl having one to the three carbon atoms and L 5 , L 6 and L 7 are independently selected from the group consisting of:

5. The method of claim 1 , wherein forming the metal comprises combining the precursor with a coreactant.

6. A method comprising:
loading an integrated circuit device in a deposition chamber;
depositing a transition metal precursor on the integrated circuit device; and
decomposing the transition metal precursor with a coreactant;
wherein the transition metal precursor is selected from the group consisting of:
(i) a mononuclear cobalt monocarbonyl nitrosyl or cobalt dicarbonyl nitrosyl;
(ii) a cobalt carbonyl bonded to one of a boron, indium, germanium and tin moiety;
(iii) a mononuclear cobalt carbonyl bonded to a mononuclear or binuclear allyl; and
(iv) a cobalt (II) complex comprising nitrogen-based supporting ligands selected from the group consisting of:

wherein R 3 is selected from a straight or branched monovalent hydrocarbon group have one to three carbon atoms and L is selected from Me 2 EtN, Me 3 N, Et 3 N and quinuclidine.

7. The method of claim 6 , wherein the metal precursor comprises a mononuclear cobalt carbonyl nitrosyl selected from the group consisting of:

wherein R 4 , R 5 , R 6 , R 7 , R 8 , R 9 , R 10 , R 11 , R 12 , R 13 , R 14 and R 15 are independently selected from a straight or branched chain alkyl having one to the three carbon atoms.

8. The method of claim 6 , wherein the metal precursor is selected from the group consisting of:

wherein R 22 and R 23 are independently selected from a straight or branched chain alkyl having one to the four carbon atoms and R 20 and R 21 may further individually be a substituted amine.

9. The method of claim 6 , wherein the metal precursor is selected from the group consisting of:

wherein R 24 , R 25 and R 26 are independently selected from a straight or branched chain alkyl having one to the three carbon atoms and L 2 , L 3 and L 4 are independently selected from the group consisting of:

10. The method of claim 6 , wherein the coreactant is selected from the group consisting of a hydrogen gas or plasma, an ammonia gas or plasma, a hydrazine, a borane, an alane and a silane.

Assignees

• Blackwell James M
• Clendenning Scott B
• Plombon John J
• Romero Patricio E
• Intel Corp

Inventors

• Blackwell James M
• Clendenning Scott B
• Plombon John J
• Romero Patricio E

Classifications

• H10P14/432

  using selective deposition · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10W20/023

  the interconnections being through-semiconductor vias · CPC title

• H10W20/033 Primary

  in openings in dielectrics · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title