Method of manufacturing semiconductor device using organic underlayer film forming composition for solvent development lithography process

Patent metadata

Field	Value
Publication number	US-9384977-B2
Application number	US-201314408310-A
Country	US
Kind code	B2
Filing date	Jun 21, 2013
Priority date	Jul 2, 2012
Publication date	Jul 5, 2016
Grant date	Jul 5, 2016

Abstract

A method of manufacturing a semiconductor device by use of an underlayer film material can form a good pattern without deteriorating the resolution limit. A method of manufacturing a semiconductor device, including: forming an organic underlayer film on a semiconductor substrate; forming an inorganic hard mask on organic underlayer film; forming a resist film on inorganic hard mask; performing irradiation of light or electron beam and solvent development to form a resist pattern; etching inorganic hard mask using resist pattern; etching organic underlayer film using patterned inorganic hard mask; and processing semiconductor substrate using patterned organic underlayer film, wherein the organic underlayer film is an organic underlayer film obtained by applying and heating an organic underlayer film forming composition containing a compound including an organic group having a functional group selected from group consisting of epoxy group, isocyanate group, blocked isocyanate group, and benzocyclobutene ring group, and an organic solvent.

First claim

The invention claimed is:

1. A method of manufacturing a semiconductor device, comprising:
forming an organic underlayer film on a semiconductor substrate;
forming an inorganic hard mask on the organic underlayer film;
forming a resist film on the inorganic hard mask;
performing irradiation of light or an electron beam and solvent development to form a resist pattern;
etching the inorganic hard mask using the resist pattern;
etching the organic underlayer film using the patterned inorganic hard mask; and
processing the semiconductor substrate using the patterned organic underlayer film, wherein
the organic underlayer film is an organic underlayer film obtained by applying and heating an organic underlayer film forming composition containing a compound including an organic group having a functional group selected from the group consisting of an epoxy group, an isocyanate group, a blocked isocyanate group, and a benzocyclobutene ring group, and an organic solvent, wherein
(1) the compound in the organic underlayer film forming composition is a polymer including a unit structure including an organic group (A1) having a functional group selected from the group consisting of an epoxy group, an isocyanate group, and a blocked isocyanate group, and a unit structure including an organic group (B1) having a functional group selected from the group consisting of a hydroxy group, a carboxylic acid group, a blocked carboxylic acid group, an amino group, an amido group, an isocyanuric acid group, and a thiol group, or
(2) the compound in the organic underlayer film forming composition is a mixture comprising a polymer including a unit structure including an organic group (A1) having a functional group selected from the group consisting of an epoxy group, an isocyanate group, and a blocked isocyanate group, and a cross-linking compound including an organic group (B1) having a functional group selected from the group consisting of a hydroxy group, a carboxylic acid group, a blocked carboxylic acid group, an amino group, an amido group, an isocyanuric acid group, and a thiol group.

2. The method of manufacturing a semiconductor device according to claim 1 , wherein (1) applies.

3. The method of manufacturing a semiconductor device according to claim 1 , wherein (2) applies.

4. A method of manufacturing a semiconductor device, comprising:
forming an organic underlayer film on a semiconductor substrate;
forming an inorganic hard mask on the organic underlayer film;
forming a resist film on the inorganic hard mask;
performing irradiation of light or an electron beam and solvent development to form a resist pattern;
etching the inorganic hard mask using the resist pattern;
etching the organic underlayer film using the patterned inorganic hard mask; and
processing the semiconductor substrate using the patterned organic underlayer film, wherein
the organic underlayer film is an organic underlayer film obtained by applying and heating an organic underlayer film forming composition containing a compound including an organic group having a functional group selected from the group consisting of an epoxy group, an isocyanate group, a blocked isocyanate group, and a benzocyclobutene ring group, and an organic solvent, wherein
the compound in the organic underlayer film forming composition is a mixture comprising a cross-linking compound including an organic group (A1) having a functional group selected from the group consisting of an epoxy group, an isocyanate group, and a blocked isocyanate group, and a polymer including a unit structure including an organic group (B1) having a functional group selected from the group consisting of a hydroxy group, a carboxylic acid group, a blocked carboxylic acid group, an amino group, an amido group, an isocyanuric acid group, and a thiol group.

5. The method of manufacturing a semiconductor device according to claim 2 , wherein
the compound in the organic underlayer film forming composition is a polymer including a unit structure including an organic group (A2) having an epoxy group or a blocked isocyanate group and a unit structure including an organic group (B2) having a hydroxy group, a blocked carboxylic acid group, or an amino group.

6. The method of manufacturing a semiconductor device according to claim 4 , wherein
the compound in the organic underlayer film forming composition is a mixture comprising a cross-linking compound including an organic group (A3) having an epoxy group or an isocyanate group, and a polymer including a unit structure including an organic group (B3) having a hydroxy group.

7. The method of manufacturing a semiconductor device according to claim 2 , wherein
the organic group (B1), is blended in an amount of 0.05 mol to 2 mol with respect to 1 mol of the organic group (A1).

8. The method of manufacturing a semiconductor device according to claim 3 , wherein
the organic group (B1) is blended in an amount of 0.05 mol to 2 mol with respect to 1 mol of the organic group (A1).

9. The method of manufacturing a semiconductor device according to claim 4 , wherein
the organic group (B1) is blended in an amount of 0.05 mol to 2 mol with respect to 1 mol of the organic group (A1).

10. The method of manufacturing a semiconductor device according to claim 5 , wherein
the organic group (B2) is blended in an amount of 0.05 mol to 2 mol with respect to 1 mol of the organic group (A2).

11. The method of manufacturing a semiconductor device according to claim 6 , wherein
the organic group (B3) is blended in an amount of 0.05 mol to 2 mol with respect to 1 mol of the organic group (A3).

12. The method of manufacturing a semiconductor device according to claim 2 , wherein
the compound in the organic underlayer film forming composition is a polymer including a unit structure including an organic group (A1) having a functional group selected from the group consisting of an epoxy group, an isocyanate group, and a blocked isocyanate group, and a unit structure including an organic group (B1) having a functional group selected from the group consisting of a hydroxy group, a carboxylic acid group, an amino group, an amido group, an isocyanuric acid group, and a thiol group.

Assignees

• Nissan Chemical Ind Ltd

Inventors

• Someya Yasunobu
• Takeda Satoshi
• Hashimoto Keisuke
• Shinjo Tetsuya
• Sakamoto Rikimaru

Classifications

• G03F7/32

  Liquid compositions therefor, e.g. developers · CPC title

• G03F7/26

  Processing photosensitive materials; Apparatus therefor (G03F7/12 - G03F7/24 take precedence) · CPC title

• G03F7/11

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

• G03F7/20

  Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title

• G03F7/40

  Treatment after imagewise removal, e.g. baking · CPC title