Method for transferring graphene film and method for manufacturing transparent conductive film

Patent metadata

Field	Value
Publication number	US-9384875-B2
Application number	US-201113992308-A
Country	US
Kind code	B2
Filing date	Dec 14, 2011
Priority date	Jan 5, 2011
Publication date	Jul 5, 2016
Grant date	Jul 5, 2016

Abstract

[Object] To provide a method for transferring a graphene film, which can transfer a graphene film on a desired substrate with excellent adhesiveness, can effectively prevent defects from being generated in a graphene film and is excellent also in mass productivity, and a method for manufacturing a transparent conductive film.
[Solving Means] One layer or a plurality of layers of graphene films 12 formed on a first substrate 11 and a second substrate 14 are stuck with a resin layer 13 that contains less than 1% by weight of a volatile component and has adhesiveness, the first substrate 11 and the second substrate 14 are pressurized to reduce a thickness of the resin layer 13 , the resin layer 13 is cured, after that the first substrate 11 is removed.

First claim

The invention claimed is:

1. A method for transferring a graphene film comprising the steps of:
sticking one layer or a plurality of layers of graphene films formed on a first substrate and a second substrate with a resin layer that contains less than 1% by weight of a volatile component and has adhesiveness; and
removing the first substrate.

2. The method for transferring a graphene film according to claim 1 , wherein a content of the volatile component of the resin layer is 0.1% by weight or less.

3. The method for transferring a graphene film according to claim 2 , further comprising the step of:
after sticking the graphene film formed on the first substrate and the second substrate with the resin layer and before removing the first substrate, pressurizing the first substrate and the second substrate to reduce a thickness of the resin layer.

4. The method for transferring a graphene film according to claim 3 , further comprising the step of:
after pressurizing the first substrate and the second substrate to reduce a thickness of the resin layer and before removing the first substrate, curing the resin layer.

5. The method for transferring a graphene film according to claim 4 , wherein the resin layer is configured of a UV-curable resin, a thermosetting resin or a thermoplastic resin.

6. The method for transferring a graphene film according to claim 1 , wherein on the graphene film formed on the first substrate, the resin layer is coated.

7. The method for transferring a graphene film according to claim 1 , wherein, after coating a resin layer that contains at least 1% by weight or more of a volatile component on the graphene film formed on the first substrate, the resin layer is dried to remove a volatile component to form the resin layer that contains less than 1% by weight of a volatile component and has adhesiveness.

8. The method for transferring a graphene film according to claim 1 , wherein a thickness of the resin layer is 2 μm or more and 20 μm or less.

9. The method for transferring a graphene film according to claim 1 , wherein the second substrate is a transparent substrate.

10. A method for manufacturing a transparent conductive film comprising the steps of:
sticking one layer or a plurality of layers of graphene films formed on a first substrate and a second substrate with a resin layer that contains less than 1% by weight of a volatile component and has adhesiveness; and
removing the first substrate.

11. The method for manufacturing a transparent conductive film according to claim 10 , wherein a content of the volatile component of the resin layer is 0.1% by weight or less.

12. The method for manufacturing a transparent conductive film according to claim 11 , further comprising the step of:
after sticking the graphene film formed on the first substrate and the second substrate with the resin layer and before removing the first substrate, pressurizing the first substrate and the second substrate to reduce a thickness of the resin layer.

13. The method for manufacturing a transparent conductive film according to claim 12 , further comprising the step of:
after pressurizing the first substrate and the second substrate to reduce a thickness of the resin layer and before removing the first substrate, curing the resin layer.

14. The method for manufacturing a transparent conductive film according to claim 13 , wherein the resin layer is configured of a UV-curable resin, a thermosetting resin or a thermoplastic resin.

15. The method for manufacturing a transparent conductive film according to claim 11 , wherein on the graphene film formed on the first substrate, the resin layer is coated.

16. The method for manufacturing a transparent conductive film according to claim 10 , wherein, after coating the resin layer that contains at least 1% by weight or more of the volatile component on the graphene film formed on the first substrate, the resin layer is dried to remove the volatile component to form the resin layer that contains less than 1% by weight of the volatile component and has adhesiveness.

17. The method for manufacturing a transparent conductive film according to claim 10 , wherein a thickness of the resin layer is 2 μm or more and 20 μm or less.

18. The method for manufacturing a transparent conductive film according to claim 10 , wherein the second substrate is a transparent substrate.

Assignees

• Kimura Nozomi
• Shimizu Keisuke
• Fukuda Toshio
• Sony Corp

Inventors

• Kimura Nozomi
• Shimizu Keisuke
• Fukuda Toshio

Classifications

• H01G9/2031

  comprising titanium oxide, e.g. TiO2 (H01G9/2036 takes precedence) · CPC title

• B32B37/025

  Transfer laminating · CPC title

• C01B32/186

  by chemical vapour deposition [CVD] · CPC title

• H01G9/2059

  comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title