Semiconductor device, semiconductor system having the same and operating method thereof

Patent metadata

Field	Value
Publication number	US-9384841-B2
Application number	US-201414497596-A
Country	US
Kind code	B2
Filing date	Sep 26, 2014
Priority date	May 26, 2014
Publication date	Jul 5, 2016
Grant date	Jul 5, 2016

Abstract

A semiconductor device may include memory blocks having a plurality of strings including drain select transistors and memory cells electrically coupled in series between a bit line and a pipe transistor and source select transistors and memory cells electrically coupled in series between a common source line and the pipe transistor; a circuit group configured to float drain select lines electrically coupled to the drain select transistors included in unselected memory blocks and source select lines electrically coupled to the source select transistors included in the unselected memory blocks and to ground a pipe line electrically coupled to the pipe transistor when a program operation of a selected memory block among the memory blocks is performed; and a control circuit configured to control the circuit group.

First claim

What is claimed is:

1. A semiconductor device, comprising:
memory blocks including a plurality of strings that include drain select transistors and memory cells electrically coupled in series between a bit line and a pipe transistor and source select transistors and memory cells electrically coupled in series between a common source line and the pipe transistor;
a circuit group configured to float drain select lines electrically coupled to the drain select transistors included i…

Assignees

• Sk Hynix Inc

Inventors

• Shim Keon Soo
• Yoo Hyun Seung

Classifications

• G11C16/12 Primary

  Physics · mapped topic

• G11C16/08

  Physics · mapped topic

• G11C8/08

  Physics · mapped topic

• G11C5/063

  Physics · mapped topic

• G11C8/12

  Physics · mapped topic