Dielectric composition and multilayer ceramic electronic component manufactured using the same

Patent metadata

Field	Value
Publication number	US-9382162-B2
Application number	US-201313842764-A
Country	US
Kind code	B2
Filing date	Mar 15, 2013
Priority date	Sep 28, 2012
Publication date	Jul 5, 2016
Grant date	Jul 5, 2016

Abstract

There are provided a dielectric composition and a multilayer ceramic electronic component manufactured using the same, the dielectric composition including a dielectric grain having a perovskite structure represented by ABO 3 , wherein, when an imaginary line is drawn in a direction from a center of the dielectric grain to a grain boundary thereof, a content of rare earth elements in a region corresponding to 0.75 to 0.95% of the dielectric grain from the center of the dielectric grain may be 0.5 to 2.5 at %, based on 100 at % of a B-site ion, so that the multilayer ceramic electronic component manufactured using the dielectric composition can have excellent reliability and secure a high dielectric constant.

First claim

What is claimed is:

1. A dielectric composition, comprising a dielectric grain having a perovskite structure represented by ABO 3 ,
when a minor axis of the dielectric grain is a conceptual line between two peak points of the dielectric grain in a shorter distance thereof, and a major axis of the dielectric grain is a conceptual line between two peak points of the dielectric grain in a longer distance thereof, a center of the dielectric grain is an intersection point of the minor axis and the major axis,
wherein, when an imaginary line is drawn in a direction from the center of the dielectric grain to a grain boundary thereof, a content of rare earth elements in a center portion of the dielectric grain is 0.05 to 2.0 at %,
content of rare earth elements across an entire region corresponding to 75 to 95% of the dielectric grain from the center of the dielectric grain is 0.5 to 2.5 at %, based on 100 at % of a B-site ion, and
the content of rare earth elements in the region corresponding to 75 to 95% of the dielectric grain from the center of the dielectric grain is 0.05 to 2.0 times a content of rare earth elements in the center portion of the dielectric grain.

2. The dielectric composition of claim 1 , wherein the A includes one or more selected from a group consisting of barium (Ba), strontium (Sr), lead (Pb), and calcium (Ca).

3. The dielectric composition of claim 1 , wherein the B includes one or more selected from a group consisting of titanium (Ti) and zirconium (Zr).

4. The dielectric composition of claim 1 , wherein the rare earth elements include a trivalent ion.

5. The dielectric composition of claim 1 , wherein the rare earth elements include one or more selected from a group consisting of scandium (Sc), yttrium (Y), lanthanum (La), actinium (Ac), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and ruthenium (Ru).

6. The dielectric composition of claim 1 , wherein the dielectric grain includes one or more selected from a group consisting of Ba m TiO 3 (0.995≦m≦1.010), (Ba 1-X Ca x ) m (Ti 1-y Zr y )O 3 (0.995≦m≦1.010, 0≦x≦0.10, 0≦y≦0.20), and Ba m (Ti 1-x Zr x )O 3 (0.995≦m≦1.010, x≦0.10); and Ba m TiO 3 (0.995≦m≦1.010), (Ba 1-X Ca x ) m (Ti 1-y Zr y )O 3 (0.995≦m≦1.010, 0≦x≦0.10, 0≦y≦0.20), and Ba m (Ti 1-x Zr x )O 3 (0.995≦m≦1.010, x≦0.10), in which one or more rare earth elements are partially dissolved.

7. A multilayer ceramic electronic component, comprising:
a ceramic body including dielectric layers each having an average thickness of 0.48 μm or less; and
internal electrodes disposed to face each other with the dielectric layer therebetween within the ceramic body,
wherein the dielectric layer includes a dielectric composition, the dielectric composition including a dielectric grain having a perovskite structure represented by ABO 3 , when a minor axis of the dielectric grain is a conceptual line between two peak points of the dielectric grain in a shorter distance thereof, and a major axis of the dielectric grain is a conceptual line between two peak points of the dielectric grain in a longer distance thereof, a center of the dielectric grain is an intersection point of the minor axis and the major axis, in which, when an imaginary line is drawn in a direction from the center of the dielectric grain to a grain boundary thereof, a content of rare earth elements in a center portion of the dielectric grain is 0.05 to 2.0 at %,
a content of rare earth elements across an entire region corresponding to 75 to 95% of the dielectric grain from the center of the dielectric grain is 0.5 to 2.5 at %, based on 100 at % of a B-site ion, and
the content of rare earth elements in the region corresponding to 75 to 95% of the dielectric grain from the center of the dielectric grain is 0.05 to 2.0 times a content of rare earth elements in the center portion of the dielectric grain.

8. The multilayer ceramic electronic component of claim 7 , the A includes one or more selected from a group consisting of barium (Ba), strontium (Sr), lead (Pb), and calcium (Ca).

9. The multilayer ceramic electronic component of claim 7 , wherein the B includes one or more selected from a group consisting of titanium (Ti) and zirconium (Zr).

10. The multilayer ceramic electronic component of claim 7 , wherein the rare earth elements include a trivalent ion.

11. The multilayer ceramic electronic component of claim 7 , wherein the rare earth elements include one or more selected from a group consisting of scandium (Sc), yttrium (Y), lanthanum (La), actinium (Ac), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and ruthenium (Ru).

12. The multilayer ceramic electronic component of claim 7 , wherein the dielectric grain includes one or more selected from a group consisting of Ba m TiO 3 (0.995≦m≦1.010), (Ba 1-X Ca x ) m (Ti 1-y Zr y )O 3 (0.995≦m≦1.010, 0≦x≦0.10, 0≦y≦0.20), and Ba m (Ti 1-x Zr x )O 3 (0.995≦m≦1.010, x≦0.10); and Ba m TiO 3 (0.995≦m≦1.010), (Ba 1-X Ca x ) m (Ti 1-y Zr y )O 3 (0.995≦m≦1.010, 0≦x≦0.10, 0≦y≦0.20), and Ba m (Ti 1-x Zr x )O 3 (0.995≦m≦1.010, x≦0.10), in which one or more rare earth elements are partially dissolved.

13. The multilayer ceramic electronic component of claim 7 , wherein the dielectric layer has a dielectric constant of 4000 or greater.

Assignees

• Samsung Electro Mech

Inventors

• Kang Sung Hyung
• Kim Doo Young
• Choi Chang Hak

Classifications

• H01G4/1236

  based on zirconium oxides or zirconates (H01G4/1263 takes precedence) · CPC title

• C04B35/49 Primary

  containing also titanium oxides or titanates · CPC title

• C04B35/4682

  based on BaTiO3 perovskite phase · CPC title

• C04B2235/3236

  Alkaline earth titanates · CPC title

• C04B2235/3289

  Noble metal oxides · CPC title