Process for producing highly conducting graphitic films from graphene liquid crystals

Patent metadata

Field	Value
Publication number	US-9382117-B2
Application number	US-201413999912-A
Country	US
Kind code	B2
Filing date	Apr 3, 2014
Priority date	Apr 3, 2014
Publication date	Jul 5, 2016
Grant date	Jul 5, 2016

Abstract

A process for producing a highly oriented graphitic film, consisting of (a) preparing a dispersion having graphene oxide (GO) or chemically functionalized graphene (CFG) dispersed in a liquid to form a liquid crystal phase (but not in a GO gel state); (b) depositing the dispersion onto a supporting substrate to form a layer of GO or CFG under an orientation-inducing stress; (c) removing the liquid to form a dried GO or CFG layer having an inter-plane spacing d 002 of 0.4 nm to 1.2 nm; (d) thermally reducing the dried layer at a first temperature higher than 100° C. to produce a porous layer of reduced GO or CFG; (e) further heat-treating the porous layer at a second temperature to produce a porous graphitic film having an inter-plane spacing d 002 less than 0.4 nm; and (f) compressing the porous graphitic film to produce the highly oriented graphitic film.

First claim

We claim:

1. A process for producing a highly oriented graphitic film with a thickness no greater than 0.1 mm and physical density no less than 1.8 g/cm 3 , said process comprising:
a) preparing a dispersion of graphene oxide (GO) or chemically functionalized graphene (CFG) having GO or CFG sheets dispersed in a liquid medium, wherein said GO sheets contain an oxygen content higher than 5% by weight or said CFG sheets contain non-carbon element content higher than 5% by weight, and GO or CFG sheets are in a liquid crystal phase in said liquid medium;
b) dispensing and depositing said GO or CFG dispersion onto a surface of a supporting substrate to form a layer of GO or CFG, wherein said dispensing and depositing procedure includes subjecting said liquid crystal phase to an orientation-inducing stress;
c) partially or completely removing said liquid medium from the layer of GO or CFG to form a dried GO or CFG layer having a layer thickness less than 200 μm and having an inter-plane spacing d002 of 0.4 nm to 1.2 nm as determined by X-ray diffraction;
d) thermally reducing said dried GO or CFG layer at a first heat treatment temperature higher than 80° C. for a sufficient period of time to produce a porous layer of reduced GO or CFG;
e) further heat-treating said porous layer of reduced GO or CFG at a second heat treatment temperature higher than the first heat treatment temperature for a sufficient period of time to produce a porous graphitic film having an inter-plane spacing d002 less than 0.4 nm and the oxygen content or non-carbon element content less than 1% by weight; and
f) compressing said porous graphitic film to produce said highly oriented graphitic film.

2. The process of claim 1 , further comprising a step of compressing said porous layer of reduced GO or CFG prior to said step (e).

3. The process of claim 1 , wherein said dispersion contains a first volume fraction of GO or CFG dispersed in said liquid medium that exceeds a critical volume fraction (Vc) for a liquid crystal phase formation and said dispersion is concentrated to reach a second volume fraction of GO or CFG, greater than the first volume fraction, to improve a GO or CFG sheet orientation.

4. The process of claim 3 , wherein said first volume fraction is equivalent to a weight fraction of from 0.05% to 3.0% by weight of GO or CFG in said dispersion.

5. The process of claim 4 , wherein said dispersion is concentrated to contain higher than 3.0% but less than 15% by weight of GO or CFG dispersed in said liquid medium prior to said step (b).

6. The process of claim 1 , wherein said dispersion further contains a polymer dissolved in said liquid medium or attached to said GO or CFG.

7. The process of claim 1 , wherein said CFG contains a chemical functional group selected from a polymer, S03H, COOH, NH2, OH, R′CHOH, CHO, CN, COCI, halide, COSH, SH, COOR′, SR′, SiR′3, Si(—OR′-)yR′3-y, R″, Li, AlR′2, Hg—X, TIZ2 and Mg—X; wherein y is an integer equal to or less than 3, R′ is hydrogen, alkyl, aryl, cycloalkyl, or aralkyl, cycloaryl, or poly(alkylether), R″ is fluoroalkyl, fluoroaryl, fluorocycloalkyl, fluoroaralkyl or cycloaryl, X is halide, and Z is carboxylate or trifluoroacetate, or a combination thereof.

8. The process of claim 1 , wherein said dispersion further contains pristine graphene sheets and a weight ratio between said pristine graphene sheets and said GO or CFG sheets is from 1/10 to 10/1.

9. The process of claim 1 , wherein said second heat treatment temperature is higher than 1,500° C. for a length of time sufficient for decreasing an inter-plane spacing d 002 to a value less than 0.36 nm and decreasing the oxygen content or non-carbon element content to less than 0.1% by weight.

10. The process of claim 1 , wherein said liquid medium consists of water and/or an alcohol.

11. The process of claim 1 , wherein said second heat treatment temperature includes at least a temperature selected from (A) 300-1,500° C., (B) 1,500-2,100° C., or (C) higher than 2,100° c.

12. The process of claim 1 , wherein said dried layer of GO or CFG has a thickness no greater than 100 μm.

13. The process of claim 1 , wherein said dried layer of GO or CFG has a thickness no greater than 50 μm.

14. The process of claim 1 , wherein said dried layer of GO or CFG has a thickness no greater than 20 μm.

15. The process of claim 1 , wherein said highly oriented graphene film has a thickness less than 50 μm.

16. The process of claim 2 , wherein said highly oriented graphene film has a thickness less than 20 μm.

17. The process of claim 1 , wherein said dispersion of GO is prepared by immersing a graphitic material in a powder or fibrous form in an oxidizing liquid in a reaction vessel at a reaction temperature for a length of time sufficient to obtain said GO dispersion wherein said graphitic material is selected from natural graphite, artificial graphite, meso-phase carbon, meso-phase pitch, meso-carbon micro-bead, soft carbon, hard carbon, coke, carbon fiber, carbon nano-fiber, carbon nano-tube, or a combination thereof and wherein said GO has an oxygen content no less than 5% by weight.

18. The process of claim 1 , wherein said dispersion of CFG is prepared by immersing a graphitic material in a powder or fibrous form in an oxidizing liquid in a reaction vessel at a reaction temperature for a length of time sufficient to obtain a graphene oxide dispersion wherein said graphitic material is selected from natural graphite, artificial graphite, meso-phase carbon, meso-phase pitch, meso-carbon micro-bead, soft carbon, hard carbon, coke, carbon fiber, carbon nano-fiber, carbon nano-tube, or a combination thereof and wherein said graphene oxide has an oxygen content no less than 5% by weight and said graphene oxide is chemically functionalized.

19. The process of claim 1 , wherein said step (b) includes feeding a sheet of a solid substrate material from a roller to a deposition zone, depositing a layer of GO or CFG dispersion onto a surface of said sheet of solid substrate material to form said GO or CFG dispersion layer thereon, drying said GO or CFG dispersion to form the dried GO or CFG layer deposited on said substrate surface, and collecting said GO or CFG layer-deposited substrate sheet on a collector roller.

20. The process of claim 1 , wherein said first and/or second heat treatment temperature contains a temperature in the range of 300° C.-1,500° C. and the highly oriented graphene film has an oxygen content less than 1%, an inter-graphene spacing less than 0.345 nm, a thermal conductivity of at least 1,000 W/mK, and/or an electrical conductivity no less than 3,000 S/cm.

21. The process of claim 1 , wherein said first and/or second heat treatment temperature contains a temperature in the range of 1,500° C.-2,100° C. and the highly oriented graphene film has an oxygen content less than 0.01%, an inter-graphene spacing less than 0.337 run, a thermal conductivity of at least 1,300 W/mK, and/or an electrical conductivity no less than 5,000 S/cm.

22. The process of claim 1 , wherein said first and/or second heat treatment temperature contains a temperature greater than 2,100° C. and the highly oriented graphene film has an oxygen content no greater than 0.001%, an inter-graphene spacing less than 0.336 nm, a mosaic spread value no greater than 0.7, a thermal conductivity of at least 1,500 W/mK, and/or an electrical conductivity no less than 10,000 S/cm.

23. The process of claim 1 , wherein said first and/or second heat

Assignees

• Zhamu Aruna
• Jang Bor Z
• Nanotek Instruments Inc

Inventors

• Zhamu Aruna
• Jang Bor Z

Classifications

• C09K5/14

  Solid materials, e.g. powdery or granular · CPC title

• C01B32/192

  starting from graphitic oxides · CPC title

• C01B32/184

  Preparation · CPC title

• H01B1/04

  mainly consisting of carbon-silicon compounds, carbon or silicon · CPC title

• C01B32/182 Primary

  Graphene · CPC title