Nanowire sensor device

Patent metadata

Field	Value
Publication number	US-9382108-B2
Application number	US-71390910-A
Country	US
Kind code	B2
Filing date	Feb 26, 2010
Priority date	Feb 27, 2009
Publication date	Jul 5, 2016
Grant date	Jul 5, 2016

Abstract

A device including: a nanowire that includes a first conductive region, and a second region, wherein the second region is an insulator material, the second region does not occupy an entire thickness of the nanowire, and the nanowire is configured so that a current is able to circulate in the nanowire from one end of the nanowire to another end of the nanowire.

First claim

The invention claimed is:

1. A device comprising:
at least one nanowire including a first conductive region, and a second region, the first conductive region and the second region being dissymmetrically disposed relative to a central axis of the at least one nanowire that extends along a longitudinal direction of the at least one nanowire,
wherein the second region is an insulator material,
the second region does not occupy an entire thickness in the at least one nanowire, and
the at least one nanowire is configured to allow circulation of current in the at least one nanowire from one end of the at least one nanowire to another end of the at least one nanowire.

2. The device according to claim 1 , wherein for the at least one nanowire, the second region extends over a length that is shorter than a length of the at least one nanowire.

3. The device according to claim 1 , wherein the first conductive region includes a doped semiconductor material or a metallic material.

4. The device according to claim 3 , wherein the first conductive region includes the doped semiconductor material that is piezoresistive material.

5. The device according to claim 1 , wherein the first conductive region includes doped semiconductor material, and the doped semiconductor material is doped with arsenic, boron or phosphorus.

6. The device according to claim 3 , wherein the first conductive region includes a silicided metal.

7. The device according to of claim 1 , wherein the insulator material includes a dielectric material or an intrinsic semiconductor material.

8. The device according to claim 1 , wherein the insulator material includes an intrinsic semiconductor material, and the intrinsic semiconductor material includes silicon or an alloy of non-doped silicon and Germanium (SiGe).

9. The device according to claim 1 , wherein the insulator material includes a dielectric material, and the dielectric material includes silicon nitride, aluminium nitride, or silicon oxide.

10. The device according to claim 1 , wherein
a the second region includes a non-doped SiGe, and the first conductive region in doped Si, or
a dielectric region in non-doped Si and a conductive region includes a doped SiGe.

11. The device according to claim 1 , further comprising:
at least one fixed anchor region at the one end of the at least one nanowire, the at least one fixed anchor region including an electric contact region.

12. The device according to claim 11 , wherein the electric contact region and the first conductive region of the at least one nanowire includes a same conductive material.

13. The device according to claim 1 , further comprising:
two fixed anchor regions, a first of the two fixed anchor regions being attached to the one end of the at least one nanowire and a second of the two fixed anchor regions being attached to the another end of the at least one nanowire.

14. The device according to claim 1 , further comprising:
at least one mobile mass attached to the one end of the at least one nanowire.

15. The device according to claim 1 , wherein the at least one nanowire is in plurality, and the device further includes:
a substrate that indirectly supports the plurality of nanowires, and the plurality of nanowires are stacked perpendicularly to a plane of the substrate directly below and facing the plurality of nanowires.

16. The device according to claim 1 , wherein the at least one nanowire is in plurality, and the device further comprising:
two support structures,
wherein the plurality of nanowires are suspended between the two support structures.

17. The device according to claim 1 , wherein a resistance of the conductive region varies in relation to strain applied to the at least one nanowire.

18. The device according to claim 17 , wherein a variation of the resistance of the conductive region is of order 1.

19. The device according to claim 1 , wherein the central axis corresponds to a neutral fiber along which stresses are zero.

20. The device according to claim 1 , wherein the at least one nanowire is suspended between two support regions.

21. The device according to claim 1 , wherein the device is a sensor.

Assignees

• Duraffourg Laurent
• Andreucci Philippe
• Ernst Thomas
• Hentz Sebastien
• Commissariat Energie Atomique

Inventors

• Duraffourg Laurent
• Andreucci Philippe
• Ernst Thomas
• Hentz Sebastien

Classifications

• B81B2203/0109

  Bridges · CPC title

• B81B3/0086 Primary

  Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage · CPC title

• B81B2201/0214

  Biosensors; Chemical sensors · CPC title